IAUA170N10S5N031AUMA1

IAUA170N10S5N031 Automotive MOSFET OptiMOS™-5 Power-Transistor PG-HSOF-5-4 Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL3 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested 1 1 1 2 3 Potential applications 4 General automotive applications. 5 Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS 100 V RDS(on) 3.1 mΩ ID (chip limited) 170 A Type Package Marking IAUA170N10S5N031 PG-HSOF-5-4 5N10031 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. . . . . . . . Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3. . . . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4. . . . . . . . Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4. . . . . . . . Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6. . . . . . . . Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 .......... Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 ......... Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 ......... 2 Data Sheet 2 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Maximum ratings at Tj=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value V GS=10 V, Chip limitation1) 170 V GS=10V, DC current2) 170 T a=85 °C, V GS=10 V, A 22 R thJA on 2s2p2,3) Pulsed drain current2) Unit I D,pulse T C=25 °C, t p= 100 µs 519 E AS I D=85 A 165 mJ Avalanche current, single pulse I AS - 130 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 197 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Avalanche energy, single pulse Data Sheet 2) 3 3 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Thermal characteristics2) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient3) Symbol Values Conditions Unit min. typ. max. R thJC – - - 0.76 R thJA – - 22.9 - K/W Electrical characteristics at Tj=25 °C, unless otherwise specified Parameter Symbol Values Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=110 µA 2.2 3 3.8 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 100 V DS=100 V, V GS=0 V, T j=100 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=40 A - 3.4 4.0 mΩ V GS=10 V, I D=85 A - 2.7 3.1 - - 1.2 - Gate resistance2) Data Sheet RG 4 4 Ω Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Parameter Symbol Values Conditions Unit min. typ. max. - 4927 6405 - 791 1029 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 32 48 Turn-on delay time t d(on) - 11 - Rise time tr - 6 - Turn-off delay time t d(off) - 22 - Fall time tf - 14 - Gate to source charge Q gs - 23 30 Gate to drain charge Q gd - 14 21 Gate charge total Qg - 67 88 Gate plateau voltage V plateau - 4.7 - V A V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=85 A, R G=3.5 Ω pF ns Gate Charge Characteristics2) V DD=50 V, I D=85 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS T C=25 °C - - 170 Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs - - 519 Diode forward voltage V SD V GS=0 V, I F=85 A, T j=25 °C - 0.9 1.2 V Reverse recovery time2) t rr - 53 - ns Reverse recovery charge2) Q rr - 79 - nC V R=50 V, I F=50A, di F/dt =100 A/µs 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 3) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Data Sheet 5 5 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Electrical characteristics diagrams 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 225 200 200 175 175 DC current 150 150 125 ID [A] Ptot [W] 125 100 100 75 75 50 50 25 25 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; parameter: tp Z thJC = f(t p); parameter: D=tp/T 1000 100 1 µs 0.5 10 µs 100 µs 1 ms 10-1 ID [A] ZthJC [K/W] 100 0.1 0.05 0.01 10-2 10 single pulse 10-3 1 0.1 1 10 100 10-6 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Data Sheet 10-5 66 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; parameter: VGS R DS(on) = f(I D); T j = 25 °C; parameter: VGS 10 1000 4.5 V 9 10 V 800 5V 8 6.5 V 7 RDS(on) [mW] ID [A] 600 6V 400 6 5 5.5 V 5.5 V 4 6V 200 5V 6.5 V 3 10 V 4.5 V 2 0 0 1 2 3 4 5 6 7 8 9 0 10 20 40 60 80 100 120 140 160 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V: parameter: Tj R DS(on) = f(T j); parameter: ID, VGS 600 6.5 -55 °C 6 25 °C 5.5 175 °C 5 VGS=6 V, ID=40 A 4.5 ID [A] RDS(on) [mW] 400 4 3.5 VGS=10 V, ID=85 A 3 2.5 200 2 1.5 1 0.5 0 2.5 3.5 4.5 5.5 6.5 -60 7.5 20 60 100 140 180 Tj [°C] VGS [V] Data Sheet -20 77 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS; parameter: I D C = f(V DS); V GS = 0 V; f = 1 MHz 4 104 Ciss 3.5 1100 µA 103 Coss C [pF] VGS(th) [V] 3 110 µA 2.5 102 2 1.5 Crss 101 1 -60 -20 20 60 100 140 0 180 20 40 Tj [°C] 60 80 100 VDS [V] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ); parameter: T j I AS = f(t AV); parameter: T j(start) 1000 103 102 IAV [A] IF [A] 25 °C 175 °C 100 25 °C 100 °C 101 150 °C 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 VSD [V] Data Sheet 10 100 1000 tAV [µs] 88 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); parameter: ID V BR(DSS) = f(T j); I D_typ = 1 mA 109 400 108 350 107 40 A 106 300 105 104 VBR(DSS) [V] EAS [mJ] 250 200 85 A 150 103 102 101 100 99 100 98 130 A 97 50 96 95 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 85 A pulsed; parameter: V DD 10 20 V 9 V GS 50 V 8 Qg 80 V 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 40 80 Qgate [nC] Data Sheet 99 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Package Outline Footprint Packaging Data Sheet 10 Rev. 1.1 2021-11-12 OptiMOS™ 5 Automotive Power MOSFET, 100 V IAUA170N10S5N031 Revision History Revision Date Changes Revision 1.0 23.03.2021 Final Datasheet Revision 1.1 12.11.2021 Corrected figure 14 Data Sheet 11 11 Rev. 1.1 2021-11-12 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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