IAUA180N04S5N012
OptiMOS™-5 Power-Transistor
Product Summary
VDS
40
V
RDS(on),max
1.2
mW
ID
180
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-HSOF-5
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL3 up to 260°C peak reflow
1
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
1
2
3
4
5
Type
Package
Marking
IAUA180N04S5N012
PG-HSOF-5
5N04N012
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V1)
180
T C=100°C, V GS=10V2)
180
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
720
Avalanche energy, single pulse2)
E AS
I D=90A
175
mJ
Avalanche current, single pulse
I AS
180
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
125
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
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IAUA180N04S5N012
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.0
Thermal resistance, junction ambient
R thJA
6 cm2 cooling area3)
-
-
60
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=70µA
2.2
2.8
3.4
Zero gate voltage drain current
I DSS
V DS=40V, V GS=0V,
T j=25°C
-
-
1
T j=125°C2)
-
-
100
V DS=40V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=7V, I D=90A
-
1.2
1.4
mW
V GS=10V, I D=90A
-
1.0
1.2
Rev. 1.0
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IAUA180N04S5N012
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4630
6158
-
1230
1636
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
56
84
Turn-on delay time
t d(on)
-
9
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
19
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
21
28
Gate to drain charge
Q gd
-
16
24
Gate charge total
Qg
-
75
100
Gate plateau voltage
V plateau
-
4.7
-
V
-
-
180
A
-
-
720
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=180A, R G=3.5W
pF
ns
Gate Charge Characteristics2)
V DD=32V, I D=180A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=90A,
T j=25°C
-
0.8
1.1
V
Reverse recovery time1)
t rr
V R=20V, I F=50A,
di F/dt =100A/µs
-
50
-
ns
Reverse recovery charge1)
Q rr
-
50
-
nC
T C=25°C
1)
Current is limited by package; with an R thJC = 1.0K/W the chip is able to carry 260 A at 25°C.
2)
The parameter is not subject to production test- verified by design/characterization.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
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IAUA180N04S5N012
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
200
200
150
150
ID [A]
Ptot [W]
1 Power dissipation
100
50
100
50
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
100
ZthJC [K/W]
0.5
ID [A]
150 µs
10-1
0.1
0.05
10
0.01
10-2
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
single pulse
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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IAUA180N04S5N012
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
720
5
680
10 V
7V
640
4.5 V
600
5V
4
5.5 V
560
520
480
400
360
320
5V
280
RDS(on) [mW]
ID [A]
440
3
5.5 V
2
240
200
7V
160
10 V
1
120
4.5 V
80
40
0
0
1
2
0
3
0
100
200
VDS [V]
300
400
500
600
140
180
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 90 A; V GS = 10 V
parameter: T j
720
2.5
680
640
600
2
560
520
480
RDS(on) [mW]
ID [A]
440
400
360
320
280
1.5
1
240
200
175 °C
160
0.5
120
-55 °C
80
25 °C
40
0
3
4
5
6
VGS [V]
Rev. 1.0
0
-60
-20
20
60
100
Tj [°C]
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IAUA180N04S5N012
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.5
Coss
3
700 µA
103
C [pF]
VGS(th) [V]
2.5
70 µA
2
Crss
1.5
102
1
0.5
101
0
-60
-20
20
60
100
140
0
180
10
20
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
103
1000
102
100
100°C
25 °C
IF [A]
101
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
25°C
150°C
IAV [A]
175 °C
30
1
1
10
100
1000
tAV [µs]
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IAUA180N04S5N012
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
46
400
45 A
44
VBR(DSS) [V]
EAS [mJ]
300
200
90 A
42
40
100
180 A
38
36
0
25
75
125
-60
175
-20
Tj [°C]
20
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 40 A pulsed
parameter: V DD
10
V GS
8V
9
Qg
32 V
8
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
10
20
30
40
50
60
70
Q gd
80
Qgate [nC]
Rev. 1.0
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2019-04-11
IAUA180N04S5N012
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2019-04-11
IAUA180N04S5N012
Revision History
Version
Version 1.0
Rev. 1.0
Date
Changes
11.04.2019 Final Data Sheet
page 9
2019-04-11
