IAUA200N04S5N010AUMA1

IAUA200N04S5N010 OptiMOS™-5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1 mW ID 200 A Features • OptiMOS™ - power MOSFET for automotive applications PG-HSOF-5 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL3 up to 260°C peak reflow 1 • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested 1 2 3 4 5 Type Package Marking IAUA200N04S5N010 PG-HSOF-5 5N04N010 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V1) 200 T C=100°C, V GS=10V2) 200 Unit A Pulsed drain current2) I D,pulse T C=25°C 800 Avalanche energy, single pulse2) E AS I D=100A 280 mJ Avalanche current, single pulse I AS - 200 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 167 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.1 page 1 2018-07-10 IAUA200N04S5N010 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.9 Thermal resistance, junction ambient R thJA 6 cm2 cooling area3) - - 60 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=100µA 2.2 2.8 3.4 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 T j=125°C2) - - 100 V DS=40V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=100A - 0.9 1.2 mW V GS=10V, I D=100A - 0.8 1.0 Rev. 1.1 page 2 2018-07-10 IAUA200N04S5N010 Parameter Symbol Values Conditions Unit min. typ. max. - 5750 7650 - 1600 2130 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 80 120 Turn-on delay time t d(on) - 11 - Rise time tr - 6 - Turn-off delay time t d(off) - 23 - Fall time tf - 12 - Gate to source charge Q gs - 28 37 Gate to drain charge Q gd - 21 32 Gate charge total Qg - 99 132 Gate plateau voltage V plateau - 4.7 - V - - 200 A - - 800 V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=200A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=200A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD V GS=0V, I F=100A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=50A, di F/dt =100A/µs - 65 - ns Reverse recovery charge2) Q rr - 80 - nC T C=25°C 1) Current is limited by package; with an R thJC = 0.9K/W the chip is able to carry 300A at 25°C. 2) The parameter is not subject to production test- verified by design/characterization. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2018-07-10 IAUA200N04S5N010 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 200 225 175 200 175 150 150 ID [A] Ptot [W] 125 100 125 100 75 75 50 50 25 25 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 0.5 ZthJC [K/W] 100 ID [A] 150 µs 0.1 10-1 0.05 0.01 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2018-07-10 IAUA200N04S5N010 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 800 10 10 V 7V 5.5 V 700 8 600 6 RDS(on) [mW] ID [A] 500 400 5V 300 4.5 V 4 5V 5.5 V 200 2 4.5V 100 7V 10V 0 0 1 2 0 3 0 100 200 300 VDS [V] 400 500 600 700 800 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 800 1.75 700 1.5 600 1.25 RDS(on) [mW] ID [A] 500 400 300 1 0.75 200 175 °C 0.5 100 25 °C -55 °C 0 3 4 5 6 VGS [V] Rev. 1.1 0.25 -60 -20 20 60 100 140 180 Tj [°C] page 5 2018-07-10 IAUA200N04S5N010 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 Coss 3 VGS(th) [V] 103 C [pF] 1000 µA 2.5 100 µA 2 Crss 1.5 102 1 0.5 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 25 °C 100 °C 25 °C IF [A] IAV [A] 175 °C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 150 °C 1 1 10 100 1000 tAV [µs] page 6 2018-07-10 IAUA200N04S5N010 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 46 600 50 A 500 44 VBR(DSS) [V] EAS [mJ] 400 300 100 A 42 40 200 200 A 38 100 36 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 200 A pulsed parameter: V DD 10 V GS 9 Qg 8 7 8V 32 V VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 Q gd 10 20 30 40 50 60 70 80 90 100 110 Qgate [nC] Rev. 1.1 page 7 2018-07-10 IAUA200N04S5N010 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2017 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 2018-07-10 IAUA200N04S5N010 Revision History Version Revision 1.0 Revision 1.1 Rev. 1.1 Date Changes 07.12.2017 Final Data Sheet 10.07.2018 package name, SOA 10µs curve page 9 2018-07-10