IAUA250N04S6N007EAUMA1

IAUA250N04S6N007E Automotive MOSFET OptiMOS™ 6 Power-Transistor PG-HSOF-5-1 Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL3 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS 40 V RDS(on),max 0.7 mΩ ID (chip limited) 380 A Type Package Marking IAUA250N04S6N007E PG-HSOF-5-1 6N04R7E Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1. . . . . . . Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3. . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4. . . . . . Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4. . . . . . . Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6. . . . . . Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 ........ Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 ........ Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 ........ 2 Data Sheet 2 Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Maximum ratings at Tj=25 °C, unless otherwise specified Parameter Continuous drain current Symbol ID Conditions Value V GS = 10 V, Chip limitation1,2) 380 V GS = 10 V, DC current3) 250 T a = 85 °C, V GS = 10 V, Unit A 55 R thJA on 2s2p2,4) Pulsed drain current2) I D,pulse T C = 25 °C, t p= 100 µs 1300 Avalanche energy, single pulse2) E AS I D = 55 A, R G,min = 25 Ω 560 mJ Avalanche current, single pulse I AS R G,min = 25 Ω 110 A Gate source voltage V GS – ±20 V Power dissipation P tot T C = 25 °C 192 W Operating and storage temperature T j, T stg – -55 ... +175 °C 3 Data Sheet 3 Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Thermal characteristics2) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient4) Symbol Values Conditions Unit min. typ. max. R thJC – – – 0.78 R thJA – – 22.9 – K/W Electrical characteristics at Tj=25 °C, unless otherwise specified Parameter Symbol Values Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0 V, I D = 1 mA 40 – – Gate threshold voltage V GS(th) V DS = V GS, I D = 110 µA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS = 40 V, V GS = 0 V, T j = 25 °C – – 1 – – 31 V DS = 40 V, V GS = 0 V, T j = 125 °C2) V µA Gate-source leakage current I GSS V GS = 20 V, V DS = 0 V – – 100 nA Drain-source on-state resistance RDS(on) V GS = 7 V, I D = 100 A – 0.65 0.83 mΩ V GS = 10 V, I D = 100 A – 0.55 0.70 – – 1 – Gate resistance2) Data Sheet RG 4 4 Ω Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Parameter Symbol Values Conditions Unit min. typ. max. – 6444 8377 – 1944 2528 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss – 94 124 Turn-on delay time t d(on) – 13 – Rise time tr – 14 – Turn-off delay time t d(off) – 27 – Fall time tf – 19 – Gate to source charge Q gs – 28 36 Gate to drain charge Q gd – 19 29 Gate charge total Qg – 94 128 Gate plateau voltage V plateau – 4.2 – V A V GS = 0 V, V DS = 25 V, f = 1 MHz V DD = 32 V, V GS = 10 V, I D = 250 A, R G = 3.5 Ω pF ns Gate Charge Characteristics2) V DD = 32 V, I D = 250 A, V GS = 0 to 10 V nC Reverse Diode Diode continous forward current2) IS T C = 25 °C – – 250 Diode pulse current2) I S,pulse T C = 25 °C, t p = 100 µs – – 1300 Diode forward voltage V SD V GS = 0 V, I F = 125 A, T j = 25 °C – 0.8 1.1 V Reverse recovery time2) t rr – 60 – ns Reverse recovery charge2) Q rr – 73 – nC V R = 20 V, I F = 50 A, di F/dt = 100 A/µs 1) Current is limited by the overall system design and the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 3) Current is limited by the package. 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Data Sheet 5 5 Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Electrical characteristics diagrams 2 Drain current P tot = f(T C); V GS ≥ 10 V I D = f(T C); V GS ≥ 10 V 300 300 250 250 200 200 ID [A] Ptot [W] 1 Power dissipation 150 150 100 100 50 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; parameter: tp Z thJC = f(t p); parameter: D=tp/T 10000 101 1 µs 1000 100 10 µs 0.5 ZthJC [K/W] ID [A] 100 µs 100 150 µs 10-1 0.1 0.05 0.01 10 10-2 single pulse 1 10-3 0.1 1 10 100 10-6 VDS [V] Data Sheet 10-5 10-4 10-3 10-2 10-1 tp [s] 6 6 Rev. 1.0 2022-01-24 100 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; parameter: VGS R DS(on) = f(I D); T j = 25 °C; parameter: VGS 1500 1.8 10 V 1250 5.5 V 1.6 7V 1.4 4.5 V 1000 5V RDS(on) [mW] ID [A] 1.2 5V 750 1 5.5 V 0.8 500 7V 4.5 V 0.6 10 V 250 0.4 0 0 1 2 0.2 3 0 250 500 VDS [V] 750 1000 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V: parameter: Tj R DS(on) = f(T j); I D = 100 A, V GS = 10 V 1500 1.4 1.2 1250 1 RDS(on) [mW] ID [A] 1000 750 500 max. 0.8 0.6 typ. 175 °C 0.4 -55 °C 250 0.2 25 °C 0 3 4 5 0 6 -60 VGS [V] Data Sheet -20 20 60 100 140 Tj [°C] 7 Rev. 1.0 2022-01-24 180 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS; parameter: I D C = f(V DS); V GS = 0 V; f = 1 MHz 105 4 3.5 104 3 VGS(th) [V] Coss C [pF] 1100 µA 2.5 110 µA 2 Ciss 103 Crss 1.5 102 1 0.5 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ); parameter: T j I AS = f(t AV); parameter: T j(start) 1000 102 IAV [A] IF [A] 103 175 °C 100 25 °C 25 °C 100 °C 150 °C 101 100 0 0.2 0.4 0.6 0.8 1 10 1.2 1 VSD [V] Data Sheet 10 100 tAV [µs] 8 Rev. 1.0 2022-01-24 1000 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); parameter: ID V BR(DSS) = f(T j); I D_typ = 1 mA 44 1500 27 A 42 EAS [mJ] VBR(DSS) [V] 1000 55 A 40 500 110 A 38 0 25 75 125 -60 175 -20 20 60 Tj [°C] 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 250 A pulsed; parameter: V DD 10 V GS 9 8V 8 Qg 32 V 7 VGS [V] 6 5 V g s(th) 4 3 2 Q g (th) Q sw Q g ate 1 Q gs 0 0 60 Q gd 120 Qgate [nC] Data Sheet 9 Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Package Outline Footprint Packaging Insert image Data Sheet 10 Rev. 1.0 2022-01-24 OptiMOS™ 6 Automotive Power MOSFET, 40 V IAUA250N04S6N007E Revision History Revision Date Changes Revision 1.0 24.01.2022 Final Data Sheet Data Sheet 11 Rev. 1.0 2022-01-24 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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