IAUC100N08S5N031ATMA1 数据手册
IAUC100N08S5N031
OptiMOS™-5 Power-Transistor
Product Summary
VDS
80
V
RDS(on)
3.1
mW
ID
100
A
Features
• N-channel - Enhancement mode
PG-TDSON-8
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
1
• 100% Avalanche tested
1
Type
Package
Marking
IAUC100N08S5N031
PG-TDSON-8
5N08031
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
100
TC=100 °C,
VGS=10 V 2)
100
Unit
A
Pulsed drain current2)
I D,pulse
T C=25 °C
400
Avalanche energy, single pulse2)
E AS
I D=50 A
250
mJ
Avalanche current, single pulse
I AS
-
100
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
167
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Rev. 1.0
page 1
2018-07-24
IAUC100N08S5N031
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
0.9
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS
V GS=0 V,
I D=1 mA
80
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=95 µA
2.2
3.0
3.8
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V,
T j=25 °C
-
0.1
1
T j=85 °C2)
-
1
20
V DS=80 V, V GS=0 V,
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=6 V, I D=25 A
-
3.5
4.6
mΩ
V GS=10 V, I D=50 A
-
2.7
3.1
-
1.6
-
Gate resistance2)
Rev. 1.0
RG
page 2
W
2018-07-24
IAUC100N08S5N031
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4250
5525
-
700
910
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
32
48
Turn-on delay time
t d(on)
-
11
-
Rise time
tr
-
6
-
Turn-off delay time
t d(off)
-
21
-
Fall time
tf
-
15
-
Gate to source charge
Q gs
-
20
26
Gate to drain charge
Q gd
-
14
21
Gate charge total
Qg
-
59
76
Gate plateau voltage
V plateau
-
4.4
-
V
-
-
100
A
-
-
400
-
0.9
1.2
V
-
54
-
ns
-
94
-
nC
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=100 A, R G=3.5 W
pF
ns
Gate Charge Characteristics2)
V DD=40 V, I D=50 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time2)
t rr
Reverse recovery charge2)
Q rr
T C=25 °C
V GS=0 V, I F=50 A,
T j=25 °C
V R=40 V, I F=50A,
di F/dt =100 A/µs
1)
Current is limited by package; with an R thJC = 0.9K/W the chip is able to carry 165A at 25°C
2)
Defined by design. Not subject to production test.
Rev. 1.0
page 3
2018-07-24
IAUC100N08S5N031
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
200
110
100
90
160
80
70
ID [A]
Ptot [W]
120
60
50
80
40
30
40
20
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
100
1 µs
0.5
10 µs
100 µs
150 µs
10-1
0.1
ID [A]
ZthJC [K/W]
100
10
0.01
10-2
1
single pulse
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
0.05
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2018-07-24
5 Typ. output characteristics
I D = f(V DS); T j = 25 °C
parameter: V GS
400
7V
10 V
6.5 V
350
300
6V
ID [A]
250
200
5.5 V
150
100
5V
50
0
0
1
2
3
4
5
6
7
VDS [V]
7 Typ. transfer characteristics
I D = f(V GS); V DS = 6V
parameter: T j
400
25 °C
350
175 °C
-55 °C
300
ID [A]
250
200
150
100
50
0
3
4
5
6
7
VGS [V]
Rev. 1.0
page 5
2018-07-24
IAUC100N08S5N031
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: V GS
6
5.5 V
5V
6V
5.5
RDS(on) [mW]
5
4.5
6.5 V
4
7V
3.5
3
10 V
2.5
0
50
100
150
200
250
300
350
400
ID [A]
8 Typ. drain-source on-state resistance
R DS(on) = f(T j)
parameter: V GS; I D
6.5
RDS(on) [mW]
5.5
VGS=6 V,
ID=25 A
4.5
3.5
VGS=10 V,
ID=50 A
2.5
1.5
-60
-20
20
60
100
140
180
Tj [°C]
Rev. 1.0
page 6
2018-07-24
IAUC100N08S5N031
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.5
950 µA
103
95 µA
2.5
Coss
C [pF]
VGS(th) [V]
3
102
2
Crss
1.5
101
1
-60
-20
20
60
100
140
0
180
20
40
60
80
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
1000
103
IF [A]
IAV [A]
102
175 °C
100
25 °C
25 °C
101
100 °C
150 °C
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1
VSD [V]
Rev. 1.0
10
100
1000
tAV [µs]
page 7
2018-07-24
IAUC100N08S5N031
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D,typ = 1 mA
parameter: I D
87
500
86
25 A
85
375
84
VBR(DSS) [V]
EAS [mJ]
83
250
50 A
82
81
80
79
125
100 A
78
77
76
0
25
75
125
-60
175
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 50 A pulsed
parameter: V DD
10
16 V
9
V GS
40 V
Qg
8
64 V
7
VGS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
25
50
75
Qgate [nC]
Rev. 1.0
page 8
2018-07-24
IAUC100N08S5N031
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2018
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2018-07-24
IAUC100N08S5N031
Revision History
Version
Date
Changes
Version 1.0
24.07.2018
Final Data Sheet
Rev. 1.0
page 10
2018-07-24
IAUC100N08S5N031ATMA1 价格&库存
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- 1+29.103601+3.61106
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- 500+10.69182500+1.32660
- 1000+9.894971000+1.22773
- 2000+9.224292000+1.14451
- 国内价格
- 10+17.13597
- 100+16.27683
- 250+15.13652
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- 国内价格
- 2+17.66187
- 10+17.13597
- 100+16.27683
- 250+15.13652
- 500+13.77230