IAUC100N08S5N043ATMA1

IAUC100N08S5N043 OptiMOS™-5 Power-Transistor Product Summary VDS 80 V RDS(on) 4.3 mW ID 100 A Features • N-channel - Enhancement mode PG-TDSON-8 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) 1 • 100% Avalanche tested 1 Type Package Marking IAUC100N08S5N043 PG-TDSON-8 5N08043 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID Conditions T C=25°C, V GS=10V T C=100 °C, Value 100 V GS=10 V1) 76 Unit A Pulsed drain current2) I D,pulse T C=25 °C 400 Avalanche energy, single pulse2) E AS I D=50 A 120 mJ Avalanche current, single pulse I AS - 100 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 125 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2018-07-24 IAUC100N08S5N043 Parameter Symbol Values Conditions Unit min. typ. max. - - 1.2 Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=63 µA 2.2 3.0 3.8 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 T j=85 °C2) - 1 20 V DS=80 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=25 A - 5.0 6.1 mΩ V GS=10 V, I D=50 A - 3.6 4.3 - 1.1 - Gate resistance2) RG W IAUC100N08S5N043 Parameter Symbol Values Conditions Unit min. typ. max. - 2970 3860 - 490 640 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 23 35 Turn-on delay time t d(on) - 8 - Rise time tr - 4 - Turn-off delay time t d(off) - 13 - Fall time tf - 10 - Gate to source charge Q gs - 14 18 Gate to drain charge Q gd - 9.3 14 Gate charge total Qg - 43 56 Gate plateau voltage V plateau - 4.8 - V - - 100 A - - 400 - 0.9 1.2 V - 50 - ns - 80 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5 W pF ns Gate Charge Characteristics2) V DD=40 V, I D=50 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=50 A, T j=25 °C V R=40 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by package; with an R thJC = 1.2K/W the chip is able to carry 120A at 25°C 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2018-07-24 IAUC100N08S5N043 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 150 100 125 80 ID [A] Ptot [W] 100 75 60 40 50 20 25 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 1 µs 10 µs 100 100 µs 0.5 100 ID [A] ZthJC [K/W] 150 µs 0.1 10-1 0.05 0.01 10 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2018-07-24 IAUC100N08S5N043 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 17.5 400 15.5 4.5 V 5V 10 V 6.5 V 13.5 RDS(on) [mW] ID [A] 300 6V 200 11.5 9.5 5.5 V 7.5 100 5.5 V 5.5 6V 5V 6.5 V 4.5 V 10 V 3.5 0 0 1 2 3 4 5 6 0 7 20 40 60 80 100 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j) parameter: T j parameter: V GS; I D 400 25 °C 9.5 -55 °C 8.5 175 °C 300 RDS(on) [mW] ID [A] 7.5 200 VGS=6 V, ID=25 A 6.5 5.5 4.5 100 VGS=10 V, ID=50 A 3.5 2.5 0 2.5 3.5 4.5 5.5 6.5 7.5 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2018-07-24 IAUC100N08S5N043 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 630 µA 3 103 C [pF] VGS(th) [V] Coss 63 µA 2.5 102 2 1.5 Crss 101 1 -60 -20 20 60 100 140 0 180 20 40 60 80 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 103 IF [A] IAV [A] 102 175 °C 100 25 °C 25 °C 101 100 °C 150 °C 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1 VSD [V] Rev. 1.0 10 100 1000 tAV [µs] page 6 2018-07-24 IAUC100N08S5N043 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 87 250 86 25 A 85 200 84 83 VBR(DSS) [V] EAS [mJ] 150 100 50 A 82 81 80 79 100 A 50 78 77 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 50 A pulsed parameter: V DD 10 9 V GS 16 V Qg 40 V 8 64 V 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 10 20 30 40 Qgate [nC] Rev. 1.0 page 7 2018-07-24 IAUC100N08S5N043 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2018 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IAUC100N08S5N043 Revision History Version Date Changes Version 1.0 24.07.2018 Final Data Sheet Rev. 1.0 page 9 2018-07-24