IAUC120N04S6L009ATMA1 数据手册
IAUC120N04S6L009
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
V
RDS(on),max
0.9
mW
ID
120
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
1
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IAUC120N04S6L009
PG-TDSON-8
6N04L009
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
120
T C=25°C, V GS=10V2,3)
150
T C=100°C, V GS=10V2)
120
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
480
Avalanche energy, single pulse2)
E AS
I D=60A, R G,min=25W
400
mJ
Avalanche current, single pulse
I AS
R G,min=25W
60
A
Gate source voltage
V GS
-
±16
V
Power dissipation
P tot
T C=25°C
150
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
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2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
1.0
Thermal resistance, junction ambient
R thJA
6 cm2 cooling area4)
-
-
50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=40V, V GS=0V,
T j=25°C
-
-
1
T j=125°C2)
-
-
25
V DS=40V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=16V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5V, I D=60A
-
0.98
1.2
mW
V GS=10V, I D=60A
-
0.78
0.96
Rev. 1.0
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2019-04-15
IAUC120N04S6L009
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
6004
7806
-
1640
2132
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
84
126
Turn-on delay time
t d(on)
-
7
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
39
-
Fall time
tf
-
19
-
Gate to source charge
Q gs
-
17
23
Gate to drain charge
Q gd
-
18
27
Gate charge total
Qg
-
97
128
Gate plateau voltage
V plateau
-
2.85
-
V
-
-
120
A
-
-
480
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=120A, R G=3.5W
pF
ns
Gate Charge Characteristics2)
V DD=32V, I D=120A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=60A,
T j=25°C
-
0.8
1.1
V
Reverse recovery time2)
t rr
V R=20V, I F=50A,
di F/dt =100A/µs
-
66
-
ns
Reverse recovery charge2)
Q rr
-
85
-
nC
T C=25°C
1)
Current is limited by package; with an R thJC = 1K/W the chip is able to carry 308 A at 25°C.
2)
The parameter is not subject to production test- verified by design/characterization.
3)
The product can operate at a current of I D=150A for a limited period of time up to t=100h at Tc=25 °C
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
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IAUC120N04S6L009
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
150
140
130
150
120
110
90
100
ID [A]
Ptot [W]
100
80
70
60
50
50
40
30
20
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
0.5
ZthJC [K/W]
100
ID [A]
100 µs
0.1
10-1
0.05
150 µs
10
0.01
10-2
single pulse
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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IAUC120N04S6L009
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
12
480
10 V
440
3.5 V
4.5 V
10
400
2.75 V
360
8
RDS(on) [mW]
320
ID [A]
280
240
200
3V
6
3V
160
4
120
80
2
2.75 V
3.5 V
40
4.5 V
10 V
0
0
1
2
3
0
4
0
50
100
150
VDS [V]
200
250
300
350
400
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
parameter: T j
1.75
450
400
350
1.25
RDS(on) [mW]
ID [A]
300
250
200
0.75
150
175 °C
100
25 °C
50
-55 °C
0
1.5
2
2.5
3
3.5
VGS [V]
Rev. 1.0
0.25
-60
-20
20
60
100
140
180
Tj [°C]
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IAUC120N04S6L009
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
2
Ciss
Coss
900 µA
C [pF]
1.5
VGS(th) [V]
90 µA
103
1
Crss
102
0.5
101
0
-60
-20
20
60
100
140
0
180
10
20
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
100
103
25 °C
100 °C
150 °C
IF [A]
IAV [A]
102
175 °C
101
25 °C
25 °C
175 °C
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
10
1
1
10
100
1000
tAV [µs]
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IAUC120N04S6L009
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
44
2000
1900
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
42
VBR(DSS) [V]
EAS [mJ]
13 Avalanche energy
15 A
30 A
40
60 A
38
25
75
125
-60
175
-20
Tj [°C]
20
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed
parameter: V DD
10
V GS
9
Qg
8V
8
32 V
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
20
40
60
80
Q gd
100
Qgate [nC]
Rev. 1.0
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2019-04-15
IAUC120N04S6L009
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2019-04-15
IAUC120N04S6L009
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2019-04-15