IAUC45N04S6N070HATMA1

IAUC45N04S6N070H OptiMOS™- 6 Power-Transistor Product Summary VDS 40 V RDS(on),max 7.0 mW ID 45 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TDSON-8-57 • Half-Bridge - N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUC45N04S6N070H PG-TDSON-8-57 6N04N070 Maximum ratings per channel, at T j=25 °C, unless otherwise specified Parameter Symbol Drain current ID Conditions V GS=10V, Chip Limitation1,2) V GS=10V, DC current3) Ta=85°C, VGS=10V, Value 55 Unit A 45 RthJA on 2s2p2,4) 14 Pulsed drain current2) I D,pulse T C=25°C, t p =100µs 119 Avalanche energy, single pulse2) E AS I D=9A, R g,min=25Ω 38 mJ Avalanche current, single pulse I AS R g,min=25Ω 9 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C 41 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2020-09-28 IAUC45N04S6N070H Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 3.7 Thermal resistance, junction - ambient4) R thJA - - 36 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=9µA 2.2 2.6 3.0 Zero gate voltage drain current I DSS V DS=40V, V GS=0V, T j=25°C - - 1 T j=125°C2) - - 10 V DS=40V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=7V, I D=22A - 6.8 9.0 mW V GS=10V, I D=22A - 5.6 7.0 Rev. 1.0 page 2 2020-09-28 IAUC45N04S6N070H Parameter Symbol Values Conditions Unit min. typ. max. - 539 701 - 173 224 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 14 21 Turn-on delay time t d(on) - 3 - Rise time tr - 1 - Turn-off delay time t d(off) - 4 - Fall time tf - 2 - Gate to source charge Q gs - 2.5 3.4 Gate to drain charge Q gd - 2.1 3.1 Gate charge total Qg - 9 12 Gate plateau voltage V plateau - 4.7 - V A V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=45A, R G=3.5W pF ns Gate Charge Characteristics2) V DD=32V, I D=45A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS T C=25°C - - 37 Diode pulse current2) I S,pulse T C=25°C, t p =100µs - - 150 Diode forward voltage V SD V GS=0V, I F=22A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr V R=20V, I F=45A, di F/dt =100A/µs - 16 - ns Reverse recovery charge2) Q rr - 6 - nC 1) Practically the current is limited by overall system design including customer specific PCB. The parameter is not subject to production test -specified by design. 3) The product can operate at specified current based on best practice to minimize electromigration at the solder joint. For rare events and inrush currents the value may be exceeded. 2) 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Rev. 1.0 page 3 2020-09-28 IAUC45N04S6N070H 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 50 80 40 Chip limit 60 ID [A] Ptot [W] 30 DC current 40 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 101 0.5 100 0.1 1 µs 100 0.05 ZthJC [K/W] ID [A] 10 µs 100 µs 0.01 10-1 single pulse 10 150 µs 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2020-09-28 IAUC45N04S6N070H 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 200 30 28 180 26 160 4.5 V 24 10 V 22 140 5V 20 7V 5.5 V RDS(on) [mW] ID [A] 120 100 80 5.0 V 18 16 5.5 V 14 12 10 60 7V 8 40 6 4.5 V 10 V 4 20 2 0 0 1 2 0 3 0 20 40 60 VDS [V] 80 100 120 140 160 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 22 A; V GS = 10 V parameter: T j 160 12 11 140 10 120 9 RDS(on) [mW] ID [A] 100 80 60 8 7 6 5 40 175 °C 4 20 25 °C 3 -55 °C 0 2.5 3 3.5 4 4.5 5 5.5 6 VGS [V] Rev. 1.0 2 -60 -20 20 60 100 140 180 Tj [°C] page 5 2020-09-28 IAUC45N04S6N070H 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 3.5 C [pF] 3 90 µA VGS(th) [V] 2.5 103 Ciss 9 µA 2 Coss 1.5 102 1 0.5 Crss 101 0 -60 -20 20 60 100 140 0 180 10 20 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 100 103 IF [A] IAV [A] 102 10 25 °C 175 °C 25 °C 101 100 °C 150 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 1 10 100 1000 tAV [µs] page 6 2020-09-28 IAUC45N04S6N070H 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA 44 100 80 4.5 A 42 EAS [mJ] VBR(DSS) [V] 60 40 9A 40 20 38 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 22 A pulsed parameter: V DD 10 V GS 8V 9 Qg 32 V 8 7 VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 2 4 6 8 Q gd 10 Qgate [nC] Rev. 1.0 page 7 2020-09-28 IAUC45N04S6N070H PG-TDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2020-09-28 IAUC45N04S6N070H Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-09-28 IAUC45N04S6N070H Revision History Version Revision 1.0 Rev. 1.0 Date Changes 22.09.2020 Final Datasheet page 10 2020-09-28