IAUC60N04S6L045HATMA1 数据手册
IAUC60N04S6L045H
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
V
RDS(on),max
4.5
mW
ID
60
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TDSON-8-57
• Half-Bridge - N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IAUC60N04S6L045H
PG-TDSON-8-57
6N04L045
Maximum ratings per channel, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Drain current
ID
Conditions
V GS=10V,
Chip Limitation1,2)
V GS=10V,
DC current3)
Ta=85°C, VGS=10V,
Value
80
Unit
A
60
RthJA on 2s2p2,4)
18
Pulsed drain current2)
I D,pulse
T C=25°C, t p =100µs
193
Avalanche energy, single pulse2)
E AS
I D=12A, R g,min=25Ω
53
mJ
Avalanche current, single pulse
I AS
R g,min=25Ω
12
A
Gate source voltage
V GS
-
±16
V
Power dissipation
P tot
T C=25°C
52
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2020-09-22
IAUC60N04S6L045H
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
2.9
Thermal resistance,
junction - ambient4)
R thJA
-
-
35
-
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=13µA
1.2
1.6
2.0
Zero gate voltage drain current
I DSS
V DS=40V, V GS=0V,
T j=25°C
-
-
1
T j=125°C2)
-
-
10
V DS=40V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=16V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5V, I D=30A
-
5.2
6.0
mW
V GS=10V, I D=30A
-
3.7
4.5
Rev. 1.0
page 2
2020-09-22
IAUC60N04S6L045H
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
874
1136
-
250
325
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
19
29
Turn-on delay time
t d(on)
-
2
-
Rise time
tr
-
1
-
Turn-off delay time
t d(off)
-
9
-
Fall time
tf
-
4
-
Gate to source charge
Q gs
-
2.9
3.7
Gate to drain charge
Q gd
-
3.0
4.5
Gate charge total
Qg
-
14
19
Gate plateau voltage
V plateau
-
3.3
-
V
A
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=60A, R G=3.5W
pF
ns
Gate Charge Characteristics2)
V DD=32V, I D=60A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
T C=25°C
-
-
49
Diode pulse current2)
I S,pulse
T C=25°C, t p =100µs
-
-
200
Diode forward voltage
V SD
V GS=0V, I F=30A,
T j=25°C
-
0.8
1.1
V
Reverse recovery time2)
t rr
V R=20V, I F=50A,
di F/dt =100A/µs
-
22
-
ns
Reverse recovery charge2)
Q rr
-
9
-
nC
1)
Practically the current is limited by overall system design including customer specific PCB.
The parameter is not subject to production test - specified by design.
3)
The product can operate at specified current based on best practice to minimize electromigration at the solder joint.
For rare events and inrush currents the value may be exceeded.
2)
4)
Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Rev. 1.0
page 3
2020-09-22
IAUC60N04S6L045H
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
60
100
50
80
Chip limit
40
ID [A]
Ptot [W]
60
30
40
DC current
20
20
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
0.5
1 µs
100
10 µs
0.1
ZthJC [K/W]
ID [A]
100
100 µs
0.05
0.01
10-1
single pulse
150 µs
10
10-2
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2020-09-22
IAUC60N04S6L045H
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
120
40
10 V
4.5 V
2.75 V
100
3V
30
3.5 V
RDS(on) [mW]
ID [A]
80
60
3.5 V
20
40
10
3.0 V
20
4.5 V
2.75 V
10 V
0
0
1
2
0
3
0
20
40
VDS [V]
60
80
100
120
140
180
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 30 A; V GS = 10 V
parameter: T j
200
8
180
7
160
6
140
RDS(on) [mW]
ID [A]
120
100
80
60
5
4
3
40
175 °C
20
2
25 °C
-55 °C
0
1.5
2
2.5
3
3.5
4
4.5
VGS [V]
Rev. 1.0
1
-60
-20
20
60
100
Tj [°C]
page 5
2020-09-22
IAUC60N04S6L045H
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
2.5
C [pF]
2
130 µA
VGS(th) [V]
1.5
103
Ciss
Coss
13 µA
1
102
0.5
Crss
101
0
-60
-20
20
60
100
140
0
180
10
20
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
100
103
IF [A]
IAV [A]
102
175 °C
10
25 °C
25 °C
100 °C
101
150 °C
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
1
1
10
100
1000
tAV [µs]
page 6
2020-09-22
IAUC60N04S6L045H
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
44
200
180
160
140
42
VBR(DSS) [V]
EAS [mJ]
120
100
80
6A
40
60
12 A
40
20
38
0
25
75
125
-60
175
-20
Tj [°C]
20
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 30 A pulsed
parameter: V DD
10
V GS
9
Qg
8V
8
32 V
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
5
10
Q gd
15
Qgate [nC]
Rev. 1.0
page 7
2020-09-22
IAUC60N04S6L045H
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2020-09-22
IAUC60N04S6L045H
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2020
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2020-09-22
IAUC60N04S6L045H
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
22.09.2020 Final Datasheet
page 10
2020-09-22