IAUC60N04S6N044
OptiMOS™- 6 Power-Transistor
Product Summary
VDS
40
V
RDS(on),max
4.5
mW
ID
60
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TDSON-8
• N-channel - Enhancement mode - Normal Level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• 175°C operating temperature
1
• Green Product (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IAUC60N04S6N044
PG-TDSON-8
6N04N044
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
60
T C=100°C, V GS=10V2)
50
Unit
A
Pulsed drain current2)
I D,pulse
T C=25°C
240
Avalanche energy, single pulse2)
E AS
I D=12A, R G,min=25W
48.0
Avalanche current, single pulse
I AS
R G,min=25W
12
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
42
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
mJ
2019-04-01
IAUC60N04S6N044
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
-
3.6
Thermal resistance, junction ambient
R thJA
6 cm2 cooling area3)
-
-
50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=14µA
2.2
2.6
3.0
Zero gate voltage drain current
I DSS
V DS=40V, V GS=0V,
T j=25°C
-
-
1
T j=125°C2)
-
-
5
V DS=40V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=7V, I D=30A
-
4.36
6.40
mW
V GS=10V, I D=30A
-
3.53
4.52
Rev. 1.0
page 2
2019-04-01
IAUC60N04S6N044
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
801
1042
-
257
334
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
18
28
Turn-on delay time
t d(on)
-
3
-
Rise time
tr
-
1
-
Turn-off delay time
t d(off)
-
5
-
Fall time
tf
-
2
-
Gate to source charge
Q gs
-
3.7
4.9
Gate to drain charge
Q gd
-
3.1
4.6
Gate charge total
Qg
-
13
18
Gate plateau voltage
V plateau
-
4.6
-
V
-
-
60
A
-
-
240
V GS=0V, V DS=25V,
f =1MHz
V DD=20V, V GS=10V,
I D=60A, R G=3.5W
pF
ns
Gate Charge Characteristics2)
V DD=32V, I D=60A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0V, I F=30A,
T j=25°C
-
0.8
1.1
V
Reverse recovery time2)
t rr
V R=20V, I F=50A,
di F/dt =100A/µs
-
21
-
ns
Reverse recovery charge2)
Q rr
-
9
-
nC
T C=25°C
1)
Current is limited by package; with an R thJC = 3.6 K/W the chip is able to carry 70 A at 25°C.
2)
The parameter is not subject to production test- verified by design/characterization.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
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IAUC60N04S6N044
1 Power dissipation
2 Drain current
P tot = f(T C); V GS = 10 V
I D = f(T C); V GS = 10 V
50
80
70
40
60
50
ID [A]
Ptot [W]
30
20
40
30
20
10
10
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
0.5
1 µs
100
0.1
100
ID [A]
ZthJC [K/W]
10 µs
100 µs
0.05
10-1
0.01
single pulse
10
150 µs
10-2
1
10-3
0.1
1
10
100
VDS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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IAUC60N04S6N044
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
240
12
10 V
7V
4.5 V
200
10
5V
5.5 V
8
5.5 V
RDS(on) [mW]
ID [A]
160
120
5V
80
6
7V
4
10 V
4.5 V
40
2
0
0
1
2
0
3
0
20
40
60
VDS [V]
80 100 120 140 160 180 200
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 50 A; V GS = 10 V
parameter: T j
200
8
7
RDS(on) [mW]
ID [A]
6
100
5
4
175°C
3
25°C
-55°C
0
2.5
3
3.5
4
4.5
5
5.5
VGS [V]
Rev. 1.0
2
-60
-20
20
60
100
140
180
Tj [°C]
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IAUC60N04S6N044
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
3.5
103
Ciss
C [pF]
3
VGS(th) [V]
140 µA
2.5
Coss
102
14 µA
2
Crss
1.5
101
1
1
0.5
-60
-20
20
60
100
140
0
180
10
20
30
VDS [V]
Tj [°C]
11 Typical forward diode characteristicis
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
100
103
IF [A]
IAV [A]
102
10
25 °C
100 °C
101
175 °C
25 °C
0.6
0.8
150 °C
100
0
0.2
0.4
1
1.2
1.4
VSD [V]
Rev. 1.0
1
1
10
100
1000
tAV [µs]
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IAUC60N04S6N044
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
44
140
120
42
VBR(DSS) [V]
EAS [mJ]
100
80
6A
60
40
40
12 A
20
38
0
25
75
125
-60
175
-20
Tj [°C]
20
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 30 A pulsed
parameter: V DD
10
V GS
8V
9
Qg
32 V
8
7
VGS [V]
6
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
5
10
Q gd
15
Qgate [nC]
Rev. 1.0
page 7
2019-04-01
IAUC60N04S6N044
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2019-04-01
IAUC60N04S6N044
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2019-04-01