IAUC90N10S5N062
OptiMOSTM-5 Power-Transistor
Product Summary
VDS
100
V
RDS(on)
6.2
mW
ID
90
A
Features
PG-TDSON-8
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
1
• Green product (RoHS compliant)
1
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
IAUC90N10S5N062
PG-TDSON-8
5N10N062
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
Value
T C=25°C, V GS=10V
90
T C=100°C, V GS=10V
66
Unit
A
Pulsed drain current1)
I D,pulse
T C=25°C
360
Avalanche energy, single pulse1)
E AS
I D=45A
112
mJ
Avalanche current, single pulse
I AS
-
47
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C,
T J =175°C
115
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
Rev. 1.0
page 1
2019-07-23
IAUC90N10S5N062
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
-
1.3
-
-
50
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient, leaded
R thJA
6 cm2 cooling area2)
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D= 59µA
2.2
3.0
3.8
Zero gate voltage drain current
I DSS
V DS=100V, V GS=0V,
T j=25 °C
-
-
1
T j=125°C1)
-
-
20
V DS=100V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=6V, I D=23A
-
6.5
7.8
mW
V GS=10 V, I D=45 A
-
5.2
6.2
-
1
-
Gate resistance1)
Rev. 1.0
RG
page 2
W
2019-07-23
IAUC90N10S5N062
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
2519
3275
-
403
524
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
20.5
31
Turn-on delay time
t d(on)
-
6
-
Rise time
tr
-
2
-
Turn-off delay time
t d(off)
-
10
-
Fall time
tf
-
8
-
Gate to source charge
Q gs
-
12
16
Gate to drain charge
Q gd
-
7.6
11.4
Gate charge total
Qg
-
36
48
Gate plateau voltage
V plateau
-
4.7
-
V
-
-
90
A
-
-
360
-
0.9
1.1
V
-
47
-
ns
-
61
-
nC
V GS=0 V, V DS=50V,
f =1MHz
V DD=50V, V GS=10V,
I D=90A, R G=3.5W
pF
ns
Gate Charge characteristics1)
V DD=50V, I D=45A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current1)
I S,pulse
Diode forward voltage
V SD
Reverse recovery time1)
t rr
Reverse recovery charge1)
Q rr
1)
T C=25°C
V GS=0V, I F=45A,
T j=25°C
V R=50V, I F=50A,
di F/dt =100A/µs
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
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IAUC90N10S5N062
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
100
100
80
75
60
ID [A]
Ptot [W]
125
50
40
25
20
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
100
10 µs
100
0.5
ZthJC [K/W]
100 µs
ID [A]
150 µs
0.1
10-1
0.05
0.01
10
single pulse
10-2
1
10-3
0.1
1
10
100
10-6
VDS [V]
Rev. 1.0
10-5
10-4
10-3
10-2
10-1
100
tp [s]
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IAUC90N10S5N062
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
15
350
10 V
6.5 V
7V
5.5 V
5V
300
6V
6.5 V
13
250
RDS(on) [mW]
ID [A]
6V
200
150
5.5 V
11
9
100
5V
7V
7
50
10 V
5
0
0
1
2
3
4
5
6
0
7
90
180
270
360
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6 V
R DS(on) = f(T j); I D = 45 A; VGS = 10 V
parameter: T j
360
12
-55 °C
25 °C
10
175 °C
RDS(on) [mW]
ID [A]
270
180
8
6
90
4
2
0
3
4
5
6
7
-20
20
60
100
140
180
Tj [°C]
VGS [V]
Rev. 1.0
-60
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IAUC90N10S5N062
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
Ciss
3.5
590 µA
103
Coss
59 µA
C [pF]
VGS(th) [V]
3
2.5
102
2
1.5
Crss
101
1
-60
-20
20
60
100
140
0
180
20
40
60
80
100
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
IF = f(VSD)
I AS = f(t AV)
parameter: T j
parameter: Tj(start)
100
103
25 °C
102
IF [A]
IAV [A]
100 °C
150 °C
10
175 °C 25 °C
101
1
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD [V]
Rev. 1.0
1
10
100
1000
tAV [µs]
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IAUC90N10S5N062
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
116
500
114
10 A
112
VBR(DSS) [V]
EAS [mJ]
400
300
20 A
110
108
200
106
45 A
100
104
102
0
25
75
125
-60
175
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 45 A pulsed
parameter: V DD
10
V GS
9
Qg
8
80 V
7
50 V
20 V
VGS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
10
20
30
40
Qgate [nC]
Rev. 1.0
page 7
2019-07-23
IAUC90N10S5N062
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2019-07-23
IAUC90N10S5N062
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2019-07-23
IAUC90N10S5N062
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
23.07.2019 Final Data Sheet
page 10
2019-07-23