IAUS260N10S5N019TATMA1

IAUS260N10S5N019T OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ power MOSFET for automotive applications VDS 100 V RDS(on) 1.9 mW ID 260 A PG-HDSOP-16-2 • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUS260N10S5N019T PG-HDSOP-16-2 5N10019 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions V GS=10 V, Chip limitation1,2) V GS=10V, DC current T a=85 °C, V GS=10 V, Value 260 Unit A 260 R thJA on 2s2p2,3) 91 Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs 995 Avalanche energy, single pulse2) E AS I D=130 A 400 mJ Avalanche current, single pulse I AS - 220 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2020-10-01 IAUS260N10S5N019T Parameter Symbol Values Conditions Unit min. typ. max. Top - - 0.5 Bottom (Pin 1-7) - 9 - Bottom (Pin 9-16) - 3 - Top - 2.8 - Bottom (through PCB) - 40 - Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient4) R thJC K/W R thJA Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=210 µA 2.2 3.0 3.8 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 T j=85 °C2) - 1 20 V DS=50 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=65 A - 2.0 2.6 mΩ V GS=10 V, I D=100 A - 1.6 1.9 - - 1.2 - Gate resistance2) Rev. 1.0 RG page 2 W 2020-10-01 IAUS260N10S5N019T Parameter Symbol Values Conditions Unit min. typ. max. - 9100 11830 pF - 1386 1801 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 61 92 Turn-on delay time t d(on) - 21 - Rise time tr - 11 - Turn-off delay time t d(off) - 49 - Fall time tf - 38 - Gate to source charge Q gs - 41 54 Gate to drain charge Q gd - 28 42 Gate charge total Qg - 128 166 Gate plateau voltage V plateau - 4.5 - V A V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=100 A, R G=3.5 W ns Gate Charge Characteristics2) V DD=50 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS T C=25 °C - - 260 Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs - - 2000 Diode forward voltage V SD V GS=0 V, I F=100 A, T j=25 °C - 0.9 1.3 V Reverse recovery time2) t rr - 79 - ns Reverse recovery charge2) Q rr - 177 - nC V R=50 V, I F=50A, di F/dt =100 A/µs 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 4) Device on a four-layer 2s2p FR4 PCB with topside cooling. Thermal insulation material is 100 µm thick and has a conductivity of 0.7 W/mK. Top surface of heat sink is fixed at ambient temperature. Bottom surface of PCB is left at free convection. Values may vary depending on the customer-specific design. Rev. 1.0 page 3 2020-10-01 IAUS260N10S5N019T 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C ); V GS ≥ 6 V 350 300 300 250 250 200 ID [A] Ptot [W] 200 150 150 100 100 50 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 0.5 1 µs 1000 10-1 10 µs 100 µs ZthJC [K/W] 0.1 ID [A] 1 ms 100 0.05 0.01 10-2 10 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2020-10-01 IAUS260N10S5N019T 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 3 7V 10 V 6.5 V 1000 2.8 2.6 800 6V 2.4 RDS(on) [mW] ID [A] 5V 600 5.5 V 5.5 V 2.2 6V 2 400 6.5 V 1.8 5V 200 10 V 1.6 1.4 0 0 1 2 3 4 5 6 0 7 50 100 150 200 250 300 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j) parameter: T j parameter: I D, V GS 1200 3.8 3.6 3.4 1000 3.2 3 2.8 RDS(on) [mW] ID [A] 800 600 2.6 VGS=6 V, ID=65 A 2.4 2.2 2 400 VGS=10 V, ID=100 A 1.8 1.6 175 °C 200 1.4 25 °C -55 °C 1.2 1 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2020-10-01 IAUS260N10S5N019T 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS ); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 2100 µA Coss C [pF] VGS(th) [V] 3 210 µA 2.5 103 Crss 2 102 1.5 1 -60 -20 20 60 100 140 0 180 20 40 60 80 100 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ) I AS = f(t AV) parameter: T j parameter: T j(start) 1000 104 103 25 °C 100 100 °C IAV [A] IF [A] 150 °C 102 175 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2020-10-01 IAUS260N10S5N019T 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j ); I D_typ = 1 mA parameter: I D 108 800 107 65 A 106 105 600 104 VBR(DSS) [V] EAS [mJ] 103 400 130 A 102 101 100 99 200 98 220 A 97 96 95 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 20 V Qg 8 7 50 V VGS [V] 6 80 V 5 4 3 2 Q gate 1 Q gs Q gd 0 0 40 80 120 Qgate [nC] Rev. 1.0 page 7 2020-10-01 IAUS260N10S5N019T Package Outline Footprint Packaging Rev. 1.0 page 8 2020-10-01 IAUS260N10S5N019T Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2020 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2020-10-01 IAUS260N10S5N019T Revision History Version Date Changes Version 1.0 01.10.2020 Final Datasheet Rev. 1.0 page 10 2020-10-01