IAUS300N04S4N007

IAUS300N04S4N007 OptiMOS™-T2 Power-Transistor Product Summary VDS 40 V RDS(on) 0.74 mW ID 300 A Features PG-HSOG-8-1 • N-channel - Enhancement mode Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 Tab 1 • 175°C operating temperature • Green product (RoHS compliant) 1 • Ultra low Rds(on) 8 • 100% Avalanche tested Type Package Marking IAUS300N04S4N007 PG-HSOG-8-1 A04S4N07 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, Value 300 V GS=10 V2) 300 Unit A Pulsed drain current2) I D,pulse T C=25 °C 1200 Avalanche energy, single pulse2) E AS I D=150 A 1100 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 375 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.0 page 1 2018-04-10 IAUS300N04S4N007 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 0.4 SMD version, device on PCB R thJA minimal footprint - - 62 6 cm2 cooling area3) - - 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 40 - - Gate threshold voltage V GS(th) V DS=V GS, I D=275 µA 2.0 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - 0.1 10 T j=85 °C2) - 1 20 V DS=18 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=100 A - 0.50 0.74 mΩ Rev. 1.0 page 2 2018-04-10 IAUS300N04S4N007 Parameter Symbol Values Conditions Unit min. typ. max. - 21043 27356 pF - 4485 5831 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 160 368 Turn-on delay time t d(on) - 56 - Rise time tr - 18 - Turn-off delay time t d(off) - 90 - Fall time tf - 49 - Gate to source charge Q gs - 113 160 Gate to drain charge Q gd - 36 90 Gate charge total Qg - 263 342 Gate plateau voltage V plateau - 5.4 - Output charge Q oss - 48 64 - - 300 - - 1200 - 0.9 1.3 V - 90 - ns - 147 - nC V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=300 A, R G=3.5 W ns Gate Charge Characteristics2) V DD=32 V, I D=300 A, V GS=0 to 10 V V DD=15 V, V GS=0 V nC V Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr A T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=20 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.4 K/W the chip is able to carry 553A at 25°C. 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2018-04-10 IAUS300N04S4N007 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 500 350 300 400 250 300 ID [A] Ptot [W] 200 150 200 100 100 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 1 µs 1000 0.5 10 µs 0.1 10-1 100 µs 0.05 ZthJC [K/W] ID [A] 200 1 ms 100 0.01 10-2 single pulse 10 10-3 1 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2018-04-10 IAUS300N04S4N007 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 12 1200 10 V 1000 6V 10 6.5 V 8 800 RDS(on) [mW] 5V ID [A] 6V 600 5.5 V 6 4 400 5.5 V 6.5 V 2 200 5V 10 V 0 0 0 1 2 3 4 5 6 0 7 300 600 900 1200 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1200 1 1000 0.8 RDS(on) [mW] ID [A] 800 600 0.6 400 0.4 200 175 °C -55 °C 25 °C 0.2 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2018-04-10 IAUS300N04S4N007 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 2750 µA 104 Coss C [pF] VGS(th) [V] 3 275 µA 2.5 103 2 1.5 Crss 102 1 -60 -20 20 60 100 140 0 180 5 10 15 20 25 30 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 104 25 °C 103 100 °C 150 °C IAV [A] IF [A] 100 102 175 °C 25 °C 10 101 100 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2018-04-10 IAUS300N04S4N007 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 44 2400 75 A 2000 43 42 VBR(DSS) [V] EAS [mJ] 1600 1200 150 A 41 40 800 300 A 39 400 38 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 300 A pulsed parameter: V DD 12 V GS 10 Qg 8V 8 VGS [V] 32 V 6 4 Q gate 2 Q gs Q gd 0 0 40 80 120 160 200 240 280 Qgate [nC] Rev. 1.0 page 7 2018-04-10 IAUS300N04S4N007 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2018 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2018-04-10 IAUS300N04S4N007 Revision History Version Date Changes Version 1.0 4/10/2017 Final Datasheet Rev. 1.0 page 9 2018-04-10