IAUS300N08S5N014

IAUS300N08S5N014 OptiMOS™-5 Power-Transistor Product Summary VDS 80 V RDS(on) 1.4 mW ID 300 A Features • N-channel - Enhancement mode PG-HSOG-8-1 • AEC qualified Tab • MSL1 up to 260°C peak reflow • 175°C operating temperature 8 • Green product (RoHS compliant) • Ultra low Rds(on) 1 Drain Tab • 100% Avalanche tested Gate pin 1 Type Package Marking IAUS300N08S5N014 PG-HSOG-8-1 A08S5N14 Source pin 2 - 8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, Value 300 V GS=10 V2) 230 Unit A Pulsed drain current2) I D,pulse T C=25 °C 1200 Avalanche energy, single pulse2) E AS I D=150 A 600 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2018-05-25 IAUS300N08S5N014 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.5 Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage2) V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=230 µA 2.2 3 3.8 Zero gate voltage drain current2) I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 T j=85 °C2) - 1 20 V DS=40 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=75 A - 1.6 2.1 mΩ V GS=10 V, I D=100 A - 1.1 1.4 Rev. 1.0 page 2 2018-05-25 IAUS300N08S5N014 Parameter Symbol Values Conditions Unit min. typ. max. - 10137 13178 pF - 1626 2114 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 71 106 Turn-on delay time t d(on) - 25 - Rise time tr - 15 - Turn-off delay time t d(off) - 52 - Fall time tf - 46 - Gate to source charge Q gs - 46 60 Gate to drain charge Q gd - 30 47 Gate charge total Qg - 144 187 Gate plateau voltage V plateau - 4.5 - V - - 300 A - - 1200 - 0.9 1.2 V - 83 - ns - 156 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5 W ns Gate Charge Characteristics2) V DD=40 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=40 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 327A at 25°C. 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2018-05-25 IAUS300N08S5N014 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 350 300 300 250 250 200 ID [A] Ptot [W] 200 150 150 100 100 50 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 0.5 1 µs 1000 10 µs 10-1 100 µs 0.1 ZthJC [K/W] ID [A] 1 ms 100 0.05 0.01 10-2 10 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2018-05-25 IAUS300N08S5N014 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 4 1200 4.5 V 10 V 5V 8V 9V 7V 3.5 800 3 RDS(on) [mW] 1000 ID [A] 6V 600 2.5 2 400 6V 5V 200 1.5 7V 8V 10 V 1 0 0 1 2 3 4 5 6 0 7 100 200 300 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1200 2.5 25 °C -55 °C 1000 2 175 °C RDS(on) [mW] ID [A] 800 600 1.5 400 1 200 0.5 0 2.5 3.5 4.5 5.5 6.5 7.5 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2018-05-25 IAUS300N08S5N014 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 VGS(th) [V] C [pF] 2300 µA 3 230 µA 2.5 Coss 103 2 102 Crss 1.5 1 -60 -20 20 60 100 140 0 180 10 20 30 40 50 60 70 80 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 25 °C 100 °C 150 °C IF [A] IAV [A] 175 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2018-05-25 IAUS300N08S5N014 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 88 1200 75 A 86 900 VBR(DSS) [V] EAS [mJ] 84 150 A 600 82 80 300 A 300 78 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 16 V Qg 8 40 V 7 64 V VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 50 100 150 Qgate [nC] Rev. 1.0 page 7 2018-05-25 IAUS300N08S5N014 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2018 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2018-05-25 IAUS300N08S5N014 Revision History Version Date Changes Version 1.0 25.05.2018 Final Data Sheet Rev. 1.0 page 9 2018-05-25