IAUT150N10S5N035

IAUT150N10S5N035 OptiMOS™-5 Power-Transistor Product Summary VDS 100 V RDS(on) 3.5 m ID 150 A Features P/G-HSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant) 1 • Ultra low Rds(on) 8 • 100% Avalanche tested Type Package Marking IAUT150N10S5N035 P/G-HSOF-8-1 5N10035 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V T C=100 °C, V GS=10 V1) Value 150 Unit A 95 Pulsed drain current1) I D,pulse T C=25 °C 600 Avalanche energy, single pulse1) E AS I D=75 A 210 mJ Avalanche current, single pulse I AS - 150 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 166 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2017-10-02 IAUT150N10S5N035 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.9 Thermal characteristics1) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=110 µA 2.2 3.0 3.8 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 20 V DS=50 V, V GS=0 V, T j=85 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=40 A - 3.7 5.0 mΩ V GS=10 V, I D=75 A - 3.0 3.5 Rev. 1.0 page 2 2017-10-02 IAUT150N10S5N035 Parameter Symbol Values Conditions Unit min. typ. max. - 4700 6110 - 780 1014 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 34 52 Turn-on delay time t d(on) - 12 - Rise time tr - 7 - Turn-off delay time t d(off) - 23 - Fall time tf - 26 - Gate to source charge Q gs - 23 30 Gate to drain charge Q gd - 15 23 Gate charge total Qg - 67 87 Gate plateau voltage V plateau - 5.2 - V - - 150 A - - 600 - 0.9 1.3 V - 63 - ns - 120 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=50 A, R G,ext=3.5  pF ns Gate Charge Characteristics1) V DD=50 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 °C V GS=0 V, I F=75 A, T j=25 °C V R=50 V, I F=50A, di F/dt =100 A/µs Defined by design. Not subject to production test. Rev. 1.0 page 3 2017-10-02 IAUT150N10S5N035 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 200 200 150 150 ID [A] Ptot [W] 1 Power dissipation 100 50 100 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs 1 ms 100 10-1 ID [A] ZthJC [K/W] 0.1 10 0.05 0.01 10-2 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2017-10-02 IAUT150N10S5N035 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 12 700 10 V 11 7V 10 6.5 V 5V 525 RDS(on) [m] ID [A] 9 6V 350 5.5 V 8 7 6 5 175 5.5 V 4 6V 5V 6.5 V 7V 10 V 3 2 0 0 1 2 3 4 5 6 0 7 50 100 150 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 6.5 700 25 °C 6 175 °C -55 °C 5.5 525 RDS(on) [m] ID [A] 5 350 4.5 4 3.5 3 175 2.5 2 1.5 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2017-10-02 IAUT150N10S5N035 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 110 µA 103 Coss C [pF] VGS(th) [V] 3 110 µA 2.5 102 2 1.5 1 -60 -20 20 60 100 140 0 180 20 40 Crss 60 80 100 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 175 °C IAV [A] IF [A] 25 °C 25 °C 150 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 100 °C 1 10 100 1000 tAV [µs] page 6 2017-10-02 IAUT150N10S5N035 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 108 400 106 40 A 104 VBR(DSS) [V] EAS [mJ] 300 200 75 A 102 100 98 100 150 A 96 94 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 20 V 8 Qg 50 V 80V 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 25 50 75 Qgate [nC] Rev. 1.0 page 7 2017-10-02 IAUT150N10S5N035 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2017 All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2017-10-02 IAUT150N10S5N035 Revision History Version Date Changes Version 1.0 2017-10-02 Final Data Sheet Rev. 1.0 page 9 2017-10-02