IAUT165N08S5N029ATMA2

IAUT165N08S5N029 OptiMOS™-5 Power-Transistor Product Summary VDS 80 V RDS(on) 2.9 m ID 165 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant) 1 • Ultra low Rds(on) 8 • 100% Avalanche tested Type Package Marking IAUT165N08S5N012 P/G-HSOF-8-1 5N08029 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Value 165 Unit A 120 Pulsed drain current2) I D,pulse T C=25 °C 660 Avalanche energy, single pulse2) E AS I D=83 A 225 mJ Avalanche current, single pulse I AS - 165 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 167 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2016-05-25 IAUT165N08S5N029 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.9 Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage2) V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=108 µA 2.2 3 3.8 Zero gate voltage drain current2) I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 20 V DS=50 V, V GS=0 V, T j=85 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=40 A - 2.9 4.4 mΩ V GS=10 V, I D=80 A - 2.4 2.9 Rev. 1.0 page 2 2016-05-25 IAUT165N08S5N029 Parameter Symbol Values Conditions Unit min. typ. max. - 4900 6370 - 790 1027 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 36 54 Turn-on delay time t d(on) - 13 - Rise time tr - 9 - Turn-off delay time t d(off) - 23 - Fall time tf - 29 - Gate to source charge Q gs - 24 31 Gate to drain charge Q gd - 15 23 Gate charge total Qg - 70 90 Gate plateau voltage V plateau - 5.0 - V - - 165 A - - 660 - 0.9 1.2 V - 60 - ns - 96 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5  pF ns Gate Charge Characteristics2) V DD=40 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=40 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.9 K/W the chip is able to carry 171A at 25°C. 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2016-05-25 IAUT165N08S5N029 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 200 200 150 150 ID [A] Ptot [W] 1 Power dissipation 100 50 100 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 1000 100 1 µs 0.5 10 µs 100 µs 1 ms 100 0.1 10-1 ID [A] ZthJC [K/W] 0.05 10 0.01 10-2 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2016-05-25 IAUT165N08S5N029 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 12 700 10 V 4.5 V 10 525 8 RDS(on) [m] ID [A] 6.5 V 350 6V 6 5V 5.5 V 4 6V 5.5 V 6.5 V 175 10 V 2 5V 4.5 V 0 0 0 1 2 3 4 5 6 0 7 50 100 150 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 80 A; V GS = 10 V parameter: T j 5 700 4.5 525 RDS(on) [m] ID [A] 4 350 3.5 3 2.5 175 2 175 °C 0 25 °C 2 4 1.5 -55 °C 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2016-05-25 IAUT165N08S5N029 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 104 4 Ciss 3.5 1080 µA 108 µA 2.5 Coss 103 C [pF] VGS(th) [V] 3 102 2 Crss 1.5 1 -60 -20 20 60 100 140 0 180 10 20 30 40 50 60 70 80 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 1000 102 100 IAV [A] IF [A] 25 °C 175 °C 25 °C 150 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 100 °C 1 10 100 1000 tAV [µs] page 6 2016-05-25 IAUT165N08S5N029 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 88 600 86 40 A VBR(DSS) [V] EAS [mJ] 84 300 80 A 82 80 165 A 78 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 V GS 9 16 V Qg 40 V 8 64 V 7 VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 25 50 75 Qgate [nC] Rev. 1.0 page 7 2016-05-25 IAUT165N08S5N029 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2016-05-25 IAUT165N08S5N029 Revision History Version Date Changes Version 1.0 29.11.2016 Final Data Sheet Rev. 1.0 page 9 2016-05-25