IAUT260N10S5N019ATMA1

IAUT260N10S5N019 OptiMOS™-5 Power-Transistor Product Summary VDS 100 V RDS(on) 1.9 mW ID 260 A Features • N-channel - Enhancement mode P/G-HSOF-8-1 Tab • AEC-Q101 qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant) 1 • Ultra low Rds(on) 8 Drain Tab • 100% Avalanche tested Type Package Marking IAUT260N10S5N019 P/G-HSOF-8-1 5N10019 Gate pin 1 Source pin 2 - 8 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V T C=100 °C, Value 260 V GS=10 V1) 197 Unit A Pulsed drain current1) I D,pulse T C=25 °C 1040 Avalanche energy, single pulse1) E AS I D=130 A 400 mJ Avalanche current, single pulse I AS - 220 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 300 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 2.0 page 1 2019-03-14 IAUT260N10S5N019 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.5 Thermal characteristics1) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=210 µA 2.2 3.0 3.8 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.1 1 T j=85 °C1) - 1 20 V DS=50 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=65 A - 2.0 2.5 mΩ V GS=10 V, I D=100 A - 1.6 1.9 Rev. 2.0 page 2 2019-03-14 IAUT260N10S5N019 Parameter Symbol Values Conditions Unit min. typ. max. - 9100 11830 pF - 1462 1900 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 61 92 Turn-on delay time t d(on) - 21 - Rise time tr - 11 - Turn-off delay time t d(off) - 49 - Fall time tf - 38 - Gate to source charge Q gs - 41 54 Gate to drain charge Q gd - 28 42 Gate charge total Qg - 128 166 Gate plateau voltage V plateau - 4.8 - V - - 260 A - - 1040 - 0.9 1.3 V - 80 - ns - 180 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=100 A, R G=3.5 W ns Gate Charge Characteristics1) V DD=50 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=50 V, I F=50A, di F/dt =100 A/µs Defined by design. Not subject to production test. Rev. 2.0 page 3 2019-03-14 IAUT260N10S5N019 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 350 300 300 250 250 200 ID [A] Ptot [W] 200 150 150 100 100 50 50 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 0.5 1000 1 µs 10-1 10 µs 0.1 100 ZthJC [K/W] ID [A] 100 µs 1 ms 0.05 0.01 10-2 10 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 2.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2019-03-14 IAUT260N10S5N019 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 12 7V 10 V 6V 5.5 V 5V 6.5 V 1000 10 800 8 RDS(on) [mW] ID [A] 6V 600 5.5 V 400 6 4 5V 200 2 0 0 6.5 V 10 V 0 1 2 3 4 5 6 0 7 300 600 900 1200 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1200 3.4 3.2 3 1000 2.8 2.6 RDS(on) [mW] ID [A] 800 600 2.2 2 1.8 400 175 °C 200 1.6 1.4 25 °C 1.2 -55 °C 1 0 2 4 6 8 -60 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 2.0 2.4 page 5 2019-03-14 IAUT260N10S5N019 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 2100 µA Coss C [pF] VGS(th) [V] 3 210 µA 2.5 103 Crss 2 102 1.5 1 -60 -20 20 60 100 140 0 180 20 40 60 80 100 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 104 103 25 °C 100 100 °C IAV [A] IF [A] 150 °C 102 175 °C 25 °C 10 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 2.0 1 10 100 1000 tAV [µs] page 6 2019-03-14 IAUT260N10S5N019 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 108 800 107 65 A 106 105 600 104 VBR(DSS) [V] EAS [mJ] 103 400 130 A 102 101 100 99 200 98 220 A 97 96 95 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 100 A pulsed parameter: V DD 10 9 V GS 20 V Qg 8 80 V 7 50 V VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 40 80 120 Qgate [nC] Rev. 2.0 page 7 2019-03-14 IAUT260N10S5N019 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2019 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 8 2019-03-14 IAUT260N10S5N019 Revision History Version Date Changes Version 1.0 02.10.2017 Final Data Sheet Version 2.0 14.03.2019 Updated avalanche parameters & RDS(on) 6V ID conditions Rev. 2.0 page 9 2019-03-14