IAUT300N08S5N012

IAUT300N08S5N012 OptiMOS™-5 Power-Transistor Product Summary VDS 80 V RDS(on) 1.2 m ID 300 A Features H-PSOF-8-1 • N-channel - Enhancement mode Tab • AEC qualified • MSL1 up to 260°C peak reflow 8 1 • 175°C operating temperature Tab • Green product (RoHS compliant) 1 • Ultra low Rds(on) 8 • 100% Avalanche tested Type Package Marking IAUT300N08S5N012 P/G-HSOF-8-1 5N08012 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions T C=25°C, V GS=10V1) T C=100 °C, V GS=10 V2) Value 300 Unit A 300 Pulsed drain current2) I D,pulse T C=25 °C 1200 Avalanche energy, single pulse2) E AS I D=150 A 817 mJ Avalanche current, single pulse I AS - 300 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 375 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2016-11-29 IAUT300N08S5N012 Parameter Symbol Values Conditions Unit min. typ. max. - - 0.4 Thermal characteristics2) Thermal resistance, junction - case R thJC - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage2) V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=275 µA 2.2 3 3.8 Zero gate voltage drain current2) I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 1 - 1 20 V DS=50 V, V GS=0 V, T j=85 °C2) V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=6 V, I D=75 A - 1.3 1.7 mΩ V GS=10 V, I D=100 A - 1.0 1.2 IAUT300N08S5N012 Parameter Symbol Values Conditions Unit min. typ. max. - 12500 16250 pF - 2000 2600 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 86 130 Turn-on delay time t d(on) - 31 - Rise time tr - 19 - Turn-off delay time t d(off) - 69 - Fall time tf - 55 - Gate to source charge Q gs - 56 73 Gate to drain charge Q gd - 37 56 Gate charge total Qg - 178 231 Gate plateau voltage V plateau - 4.5 - V - - 300 A - - 1200 - 0.9 1.2 V - 86 - ns - 177 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=100 A, R G=3.5  ns Gate Charge Characteristics2) V DD=40 V, I D=100 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS Diode pulse current2) I S,pulse Diode forward voltage V SD Reverse recovery time2) t rr Reverse recovery charge2) Q rr T C=25 °C V GS=0 V, I F=100 A, T j=25 °C V R=40 V, I F=50A, di F/dt =100 A/µs 1) Current is limited by bondwire; with an R thJC = 0.4 K/W the chip is able to carry 400A at 25°C. 2) Defined by design. Not subject to production test. Rev. 1.0 page 3 2016-11-29 IAUT300N08S5N012 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 350 400 300 300 200 ID [A] Ptot [W] 250 200 150 100 100 50 0 0 0 50 100 150 0 200 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 10000 100 1 µs 0.5 1000 10 µs 10-1 100 ZthJC [K/W] ID [A] 100 µs 1 ms 0.1 0.05 10-2 0.01 10 single pulse 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2016-11-29 IAUT300N08S5N012 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 4 1200 4.5 V 10 V 5V 6.5 V 3.5 1000 3 6V RDS(on) [m] ID [A] 800 600 5.5 V 2.5 2 5.5 V 400 1.5 6V 6.5 V 5V 4.5 V 200 10 V 1 0.5 0 0 1 2 3 4 5 6 0 7 100 200 300 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 100 A; V GS = 10 V parameter: T j 1200 -55 °C 25 °C 175 °C 2.1 1000 1.9 1.7 RDS(on) [m] ID [A] 800 600 1.5 1.3 1.1 400 0.9 200 0.7 0.5 0 2 4 6 8 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2016-11-29 IAUT300N08S5N012 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 105 4 3.5 Ciss 104 2750 µA Coss C [pF] VGS(th) [V] 3 275 µA 2.5 103 2 102 Crss 1.5 101 1 -60 -20 20 60 100 140 0 180 20 40 60 80 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 1000 104 103 IAV [A] IF [A] 25 °C 102 100 °C 100 150 °C 175 °C 25 °C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2016-11-29 IAUT300N08S5N012 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 87 2000 86 85 1600 75 A 84 83 VBR(DSS) [V] EAS [mJ] 1200 800 82 81 80 150 A 79 400 78 300 A 77 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 300 A pulsed parameter: V DD 10 V GS 9 16 V Qg 8 40 V 7 64 V VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 40 80 120 160 Qgate [nC] Rev. 1.0 page 7 2016-11-29 IAUT300N08S5N012 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2016 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IAUT300N08S5N012 Revision History Version Date Changes Version 1.0 29.12.2016 Final Data Sheet Rev. 1.0 page 9 2016-11-29