IAUZ18N10S5L420

IAUZ18N10S5L420 OptiMOS™-5 Power-Transistor Product Summary VDS 100 V RDS(on),max 42 mW ID 18 A Features • OptiMOS™ - power MOSFET for automotive applications PG-TSDSON-8 • N-channel - Enhancement mode - Logic Level • AEC Q101 qualified 1 • MSL1 up to 260°C peak reflow • 175°C operating temperature 1 • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Type Package Marking IAUZ18N10S5L420 PG-TSDSON-8 5N1L420 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Conditions Value T C=25°C, V GS=10V 18 T C=100°C, V GS=10V1) 13 Unit A Pulsed drain current1) I D,pulse T C=25°C 72 Avalanche energy, single pulse1) E AS I D=7A 11 mJ Avalanche current, single pulse I AS - 7 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25°C TJ =175°C 30 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 - Rev. 1.0 page 1 2019-07-23 IAUZ18N10S5L420 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 5.0 Thermal resistance, junction ambient R thJA 6 cm2 cooling area2) - - 62 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D= 1mA 100 - - Gate threshold voltage V GS(th) V DS=V GS, I D=8µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=100V, V GS=0V, T j=25°C - - 1 T j=125°C1) - - 100 V DS=100V, V GS=0V, V µA Gate-source leakage current I GSS V GS=20V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=9A - 46 55 mW V GS=10V, I D=9A - 34.5 42 - 1.8 - Gate resistance1) Rev. 1.0 RG page 2 W 2019-07-23 IAUZ18N10S5L420 Parameter Symbol Values Conditions Unit min. typ. max. - 356 470 - 68 88 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 6 9 Turn-on delay time t d(on) - 1 - Rise time tr - 1 - Turn-off delay time t d(off) - 3 - Fall time tf - 3 - Gate to source charge Q gs - 1.2 1.7 Gate to drain charge Q gd - 1.2 2.0 Gate charge total Qg - 5.4 8 Gate plateau voltage V plateau - 3.3 - V - - 18 A - - 72 - 0.9 1.1 V - 36 - ns - 33 - nC V GS=0V, V DS=50V, f =1MHz V DD=50V, V GS=10V, I D=18A, R G=3.5W pF ns Gate Charge Characteristics1) V DD=50V, I D=9A, V GS=0 to 10V nC Reverse Diode Diode continous forward current1) IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25°C V GS=0V, I F=9A, T j=25°C V R=50V, I F=18A, di F/dt =100A/µs Specified by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2019-07-23 IAUZ18N10S5L420 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 35 20 30 15 20 ID [A] Ptot [W] 25 10 15 10 5 5 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 0.5 1 µs 10 µs 100 ZthJC [K/W] ID [A] 100 µs 10 0.1 150 µs 0.05 0.01 10-1 single pulse 1 10-2 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2019-07-23 IAUZ18N10S5L420 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 90 90 3V 10 V 75 80 3,5 V 60 70 RDS(on) [mW] ID [A] 4V 45 4.5 V 30 4.5 V 60 50 4V 15 40 3.5 V 10 V 3V 0 0 2 4 6 30 8 0 10 20 30 VDS [V] 40 50 60 70 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 9 A parameter: T j Parameter: VGS 80 100 -55 °C 70 80 60 25 °C 40 175 °C 30 RDS(on) [mW] ID [A] 50 60 4.5V 40 10V 20 20 10 0 1.5 2.5 3.5 4.5 0 5.5 -60 VGS [V] Rev. 1.0 -20 20 60 100 140 180 Tj [°C] page 5 2019-07-23 IAUZ18N10S5L420 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 2.3 Ciss 2.1 1.9 Coss VGS(th) [V] 1.5 C [pF] 80 µA 1.7 102 8 µA 1.3 Crss 101 1.1 0.9 0.7 100 0.5 -60 -20 20 60 100 140 0 180 20 40 60 80 100 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Avalanche characteristics IF = f(VSD) I A S= f(t AV) parameter: T j parameter: Tj(start) 10 103 25 °C 100 °C 102 IF [A] IAV [A] 150 °C 1 101 175 °C 25 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 VSD [V] Rev. 1.0 0.1 0.1 1 10 100 1000 tAV [µs] page 6 2019-07-23 IAUZ18N10S5L420 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: ID 110 45 40 1.75 A 35 105 VBR(DSS) [V] EAS [mJ] 30 25 3.5 A 20 100 15 7A 10 5 95 0 25 75 125 -60 175 -20 Tj [°C] 20 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 9 A pulsed parameter: V DD 10 V GS 9 Qg 8 80 V 7 VGS [V] 6 20 V 50 V 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 1 2 3 4 5 Q gd 6 Qgate [nC] Rev. 1.0 page 7 2019-07-23 IAUZ18N10S5L420 PG-TSDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2019-07-23 IAUZ18N10S5L420 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2019 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2019-07-23 IAUZ18N10S5L420 Revision History Version Date Changes Revision 1.0 Rev. 1.0 23.07.2019 Final Data Sheet page 10 2019-07-23