IAUZ20N08S5L300

IAUZ20N08S5L300 OptiMOS™-5 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level VDS 80 V RDS(on) 30 mW ID 20 A • MSL1 up to 260°C peak reflow PG-TSDSON-8 • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested 1 Quality Features 1 • Infineon Automotive Quality • Extended qualification beyond AEC Q101 • Enhanced testing • Advanced adhesion against delamination • Complementary testing for board level reliability Type Package Marking IAUZ20N08S5L300 PG-TSDSON-8 5N8L300 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Continous drain current ID Conditions T C=25°C, V GS=10V T C=100 °C, Value 20 V GS=10 V1) 14 Unit A Pulsed drain current1) I D,pulse T C=25°C 80 Avalanche energy, single pulse1) E AS I D=10 A 20 mJ Avalanche current, single pulse I AS - 10 A Gate source voltage V GS - ±20 V Power dissipation P tot T C=25 °C 30 W Operating and storage temperature T j, T stg - -55 ... +175 °C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1.0 page 1 2019-10-04 IAUZ20N08S5L300 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics1) Thermal resistance, junction - case R thJC - - - 5 Thermal resistance, junction - ambient2) RthJA - - 40 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 80 - - Gate threshold voltage V GS(th) V DS=V GS, I D=8 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - - 1 T j=85 °C1) - - 100 V DS=80 V, V GS=0 V, V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance RDS(on) V GS=4.5 V, I D=10 A - 29.8 41.0 mΩ V GS=10 V, I D=10 A - 22.4 30 - 0.9 - Gate resistance1) RG W IAUZ20N08S5L300 Parameter Symbol Values Conditions Unit min. typ. max. - 461 599 - 83 108 Dynamic characteristics1) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 7.7 11.6 Turn-on delay time t d(on) - 2 - Rise time tr - 1 - Turn-off delay time t d(off) - 5 - Fall time tf - 3 - Gate to source charge Q gs - 1.5 1.9 Gate to drain charge Q gd - 1.8 2.7 Gate charge total Qg - 8.1 10.5 Gate plateau voltage V plateau - 3.2 - V - - 20 A - - 43 - 0.9 1.2 V - 29 - ns - 20 - nC V GS=0 V, V DS=40 V, f =1 MHz V DD=40 V, V GS=10 V, I D=20 A, R G=3.5 W pF ns Gate Charge characteristics1) V DD=40 V, I D=10 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current1) IS Diode pulse current1) I S,pulse Diode forward voltage V SD Reverse recovery time1) t rr Reverse recovery charge1) Q rr 1) T C=25 °C V GS=0 V, I F=10 A, T j=25 °C V R=40 V, I F=20A, di F/dt =100 A/µs The parameter is not subject to production test - verified by design/chracterization. 2) Device on four layer 2s2p PCB defined in accordance with JEDEC standards (JESD51-5-7). PCB is vertical in still air. Rev. 1.0 page 3 2019-10-04 IAUZ20N08S5L300 1 Power dissipation 2 Drain current P tot = f(T C); V GS ≥ 6 V I D = f(T C); V GS ≥ 6 V 35 25 30 20 15 20 ID [A] Ptot [W] 25 15 10 10 5 5 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 0.5 10 µs 100 ZthJC [K/W] ID [A] 100 µs 150 µs 10 0.1 0.05 0.01 10-1 single pulse 1 10-2 0.1 1 10 100 VDS [V] Rev. 1.0 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2019-10-04 IAUZ20N08S5L300 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = (I D); T j = 25 °C parameter: V GS parameter: V GS 90 90 10 V 3V 80 3.5 V 80 7V 4V 4.5 V 70 70 RDS(on) [mW] ID [A] 60 4.5 V 50 40 60 50 4V 30 40 20 3.5 V 7V 30 10 3V 10 V 20 0 0 1 2 3 4 5 6 0 7 20 40 60 80 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); I D = 10 A; V GS = 10 V parameter: T j 80 60 55 70 -55 °C 50 25 °C 60 175 °C 45 RDS(on) [mW] ID [A] 50 40 30 40 35 30 25 20 20 10 15 10 0 1.5 3 4.5 6 -20 20 60 100 140 180 Tj [°C] VGS [V] Rev. 1.0 -60 page 5 2019-10-04 IAUZ20N08S5L300 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 2.5 Ciss 2 80 µA 102 Coss 101 Crss C [pF] VGS(th) [V] 1.5 8 µA 1 0.5 0 -60 -20 20 60 100 140 0 180 20 40 60 80 VDS [V] Tj [°C] 11 Typical forward diode characteristicis 12 Typ. avalanche characteristics IF = f(VSD) I AS = f(t AV) parameter: T j parameter: Tj(start) 103 100 102 10 IF [A] IAV [A] 25 °C 25 °C 100 °C 150 °C 175 °C 1 101 0.1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.0 1 10 100 1000 tAV [µs] page 6 2019-10-04 IAUZ20N08S5L300 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D_typ = 1 mA parameter: I D 87 80 86 2.5 A 85 60 84 VBR(DSS) [V] EAS [mJ] 83 40 5A 82 81 80 79 20 10 A 78 77 76 0 25 75 125 -60 175 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 10 A pulsed parameter: V DD 10 V GS 9 Qg 8 64 V 7 16 V 40 V VGS [V] 6 5 4 3 2 Q gate 1 Q gs Q gd 0 0 2 4 6 8 10 Qgate [nC] Rev. 1.0 page 7 2019-10-04 IAUZ20N08S5L300 PG-TSDSON-8: Outline Footprint Dimensions in mm Packaging Rev. 1.0 page 8 2019-10-04 IAUZ20N08S5L300 Published by Infineon Technologies AG 85579 Neubiberg, Germany © Infineon Technologies AG 2019 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 9 2019-10-04