D ata shee t,V e rsio n 2 .5, Ju ly 4, 2011
®
ICE 2 QR0 6 6 5
Of f -Li ne SM PS Q uas i- Res o nant
PW M Cont r oll er wit h in teg rat ed
650V Co olM OS ® a nd s t ar tu p c el l in
DI P-8
Power Management & Supply
N e v e r
s t o p
t h i n k i n g .
CoolSET® - Q1
ICE2QR0665
Revision History:
July 4, 2011
Previous Version:
2.4
Page
Subjects (major changes since last revision)
20
revised of outline dimension
Datasheet
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.
Edition 2011-07-04
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 7/4/11.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
CoolSET® - Q1
ICE2QR0665
Off-Line SMPS Quasi-Resonant PWM
Controller with integrated 650V CoolMOS®
and startup cell in DIP-8
Product Highlights
•
•
•
•
Quasi resonant operation
Active Burst Mode to reach the lowest standby power requirement
VZCRS
Maximum ringing suppression
time
tZCRS2
-
25
-
ms
VZC < VZCRS
Threshold to set Up/Down
Counter to one
VFBR1
-
3.9
-
V
Threshold for downward
counting at low line
VFBZHL
-
3.2
-
V
Threshold for upward counting
at low line
VFBZLL
-
2.5
-
V
Threshold for downward
counting at hig line
VFBZHH
-
2.9
-
V
Threshold for upward counting
at highline
VFBZLH
-
2.3
-
V
ZC current for IC switch
threshold to high line
IZCSH
-
1.3
-
mA
ZC current for IC switch
threshold to low line
IZCSL
-
0.8
-
mA
Counter time1)
tCOUNT
-
48
-
ms
Maximum restart time in normal
operation
tOffMax
30
42
57.5
ms
1)
The parameter is not subjected to production test - verified by design/characterization
4.3.8
Active Burst Mode
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Feedback voltage for entering
Active Burst Mode
VFBEB
-
1.25
-
Minimum Up/down value for
entering Active Burst Mode
NZC_ABM
-
7
-
Blanking time for entering Active
Burst Mode
tBEB
-
24
-
ms
Feedback voltage for leaving
Active Burst Mode
VFBLB
-
4.5
-
V
Feedback voltage for burst-on
VFBBOn
-
3.6
-
V
Feedback voltage for burst-off
VFBBOff
-
3.0
-
V
Version 2.5
15
Test Condition
V
July 4, 2011
CoolSET® - Q1
ICE2QR0665
Electrical Characteristics
Fixed Switching Frequency in
Active Burst Mode
fsB
39
52
65
Max. Duty Cycle in Active Burst
Mode
DmaxB
-
0.5
-
4.3.9
kHz
Protection
Parameter
Symbol
Limit Values
Unit
min.
typ.
max.
VCC overvoltage threshold
VVCCOVP
24.0
25.0
26.0
V
Over Load or Open Loop
Detection threshold for OLP
protection at FB pin
VFBOLP
-
4.5
-
V
Over Load or Open Loop
Protection Blanking Time
tOLP_B
20
30
44
ms
Output Overvoltage detection
threshold at the ZC pin
VZCOVP
3.55
3.7
3.84
V
Blanking time for Output
Overvoltage protection
tZCOVP
-
100
-
ms
Threshold for short winding
protection
VCSSW
1.63
1.68
1.78
V
Blanking time for short-windding
protection
tCSSW
-
190
-
ns
Over temperature protection1)
TjCon
130
140
150
°C
Note:
Test Condition
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
4.3.10
CoolMOS® Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
V(BR)DSS
650
-
-
V
Tj = 110°C
Drain Source On-Resistance
RDSon1
-
0.65
1.37
0.75
1.58
W
W
Tj = 25°C
Tj=125°C1)
at ID = 2.5A
Effective output capacitance, energy
related
Co(er)
-
261)
-
pF
VDS = 0V to 480V
Rise Time
trise
-
302)
-
ns
Fall Time
tfall
-
302)
-
ns
1)
The parameter is not subjected to production test - verified by design/characterization
2)
Measured in a Typical Flyback Converter Application
Version 2.5
16
July 4, 2011
CoolSET® - Q1
ICE2QR0665
Typical CoolMOS® Performance Characteristic
5
Typical CoolMOS® Performance Characteristic
Figure 9
Safe Operating Area(SOA) curve for ICE2QR0665
Figure 10
Power dissipation; Ptot=f(Ta)
Version 2.5
17
July 4, 2011
CoolSET® - Q1
ICE2QR0665
Typical CoolMOS® Performance Characteristic
Figure 11
Version 2.5
Drain-source breakdown voltage; VBR(DSS)=f(Tj)
18
July 4, 2011
CoolSET® - Q1
ICE2QR0665
Input power curve
6
Input power curve
Two input power curves gives typical input power versus ambient temperature are showed below;
Vin=85~265Vac(Figure 12) and Vin=230Vac(Figure 13). The curves are derived based on a typical
discontinuous mode flyback model which considers 115V maximum secondary to primary reflected voltage(high
priority). The calculation is based on no copper area as heatsink for the device. The input power already includes
power loss at input comman mode choke and bridge rectifier and the CoolMOS ®. The device saturation
current(ID_plus@Tj=125 °C) is also considered.
To estimate the out power of the device, it is simply multiplying the input power at a particulary ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage(Figure 12),
operating temperature is 50 °C, estimated efficiency is 85%,the output power is 42.5W(50W*0.85).
Input Power(85Vac~265Vac)[W]
70
60
50
40
30
20
10
0
0
25
35
45
55
65
75
85
95
105
115
125
95
105
115
125
0
Ambient Temperature[ C ]
Figure 12
Input Power curve Vin=85~265Vac;Pin=f(Ta)
120
Input Power(230Vac)[W]
100
80
60
40
20
0
0
25
35
45
55
65
75
85
0
Am b ien t T em p eratu re[ C ]
Figure 13
Version 2.5
Input Power curve Vin=230Vac;Pin=f(Ta)
19
July 4, 2011
CoolSET® - Q1
ICE2QR0665
Outline Dimension
7
Outline Dimension
PG-DIP-8
(Leadfree Plastic Dual In-Line Outline)
Figure 14
Version 2.5
PG-DIP-8 (Pb-free lead plating Plastic Dual-in-Line Outline)
20
July 4, 2011
Total Quality Management
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
http://www.infineon.com
Published by Infineon Technologies AG
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
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