ICE2QR1765G
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Product Highlights
Active Burst Mode to reach the lowest standby power requirement 25 V & last for 10 μs (normal
mode only)
VCC Undervoltage/ Short
Optocoupler
VVCC < 10.5 V
Auto Restart
Overload/Open Loop
VFB > 4.5 V & last for 30 ms
Auto Restart
Over Temperature (Controller
Junction)
TJ > 130 °C
Auto Restart
Output Overvoltage
VZCOVP > 3.7 V & last for 100 μs
Latch
Short Winding
VCSSW > 1.68 V & last for 190 ns
Latch
In case of open control loop or output over load, the feedback voltage will be pulled up. After a blanking time of
tOLP_B (30 ms), the IC enters auto-restart mode. The blanking time here enables the converter to provide a peak
power in case the increase in VFB is due to a sudden load increase. This output over load protection is disabled
during burst mode.
During off-time of the power switch, the voltage at the zero-crossing pin is monitored for output over-voltage
detection. If the voltage is higher than the preset threshold VZCOVP, the IC is latched off after the preset blanking
time tZCOVP. This latch off mode can only be reset if the VVCC < VVCCPD.
If the junction temperature of IC controller exceeds TjCon (130 °C), the IC enters into OTP auto restart mode. This
OTP is disabled during burst mode.
If the voltage at the current sensing pin is higher than the preset threshold VCSSW during on-time of the power
switch, the IC is latched off. This is short-winding protection. The short winding protection is disabled during
burst mode.
During latch-off protection mode, the VCC voltage drops to VVCCoff (10.5 V) and then the startup cell is activated.
The VCC voltage is then charged to VVCCon (18 V). The startup cell is shut down again. This action repeats again
and again.
There is also a maximum on time limitation implemented inside the CoolSET™ Q1. Once the gate voltage is high
and longer than tOnMax, the switch is turned off immediately.
Data Sheet
12
Revision 2.3
2017-09-12
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4
Note:
4.1
Note:
Table 4
Electrical Characteristics
All voltages are measured with respect to ground (Pin 12). The voltage levels are valid if other ratings
are not violated.
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to
destruction of the integrated circuit. For the same reason make sure, that any capacitor that will be
connected to pin 11 (VCC) is discharged before assembling the application circuit. Ta=25 ˚C unless
otherwise specified.
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
Tj=110 °C
Drain Source Voltage
VDS
-
650
V
Switching drain current, pulse width tp
limited by Tjmax
IS
-
4.03
A
Pulse drain current, tp limited by Tjmax
ID_Plus
-
6.12
A
Avalanche energy, repetitive tAR limited EAR
by max. Tj=150 °C1
-
0.15
mJ
Avalanche current, repetitive tAR
limited by max. Tj=150 °C1
IAR
-
1.5
A
VCC Supply Voltage
VVCC
-0.3
27
V
FB Voltage
VFB
-0.3
5.5
V
ZC Voltage
VZC
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Maximum current out from ZC pin
IZCMAX
3
-
mA
Junction Temperature
Tj
-40
150
°C
Storage Temperature
TS
-55
150
°C
Thermal Resistance
(Junction–Ambient)
RthJA
-
110
K/W
Soldering temperature, wavesoldering
only allowed at leads
Tsold
-
260
°
C
1.6mm (0.063in.) from case
for 10s
ESD Capability (incl. Drain Pin)
VESD
-
2
kV
Human body model2
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
According to EIA/JESD22-A114-B (discharging a 100 pF capacitor through a 1.5 kW series resistor
Data Sheet
13
Controller & CoolMOS™
1
2
Revision 2.3
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.2
Note:
Table 5
Operating Range
Within the operating range the IC operates as described in the functional description.
Operating Range
Parameter
Symbol
Limit Values
min.
max.
Unit
VCC Supply Voltage
VVCC
VVCCoff
VVCCOVP
V
Junction Temperature of Controller
TjCon
-40
130
°C
Junction Temperature of CoolMOS™
TjCoolMOS
-40
150
°C
4.3
Characteristics
4.3.1
Supply Section
Note:
Table 6
Remarks
Limited by over
temperature protection.
The electrical characteristics involve the spread of values within the specified supply voltage and
junction temperature range TJ from – 40 °C to 125 °C. Typical values represent the median values,
which are related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Supply Section
Parameter
Symbol Limit Values
min.
typ.
max.
Unit
Test Condition
Start Up Current
IVCCstart
-
300
550
μA
VVCC =VVCCon -0.2 V
VCC Charge Current
IVCCcharge1 -
1.22
5
mA
VVCC = 0 V
IVCCcharge2 0.8
1.1
-
mA
VVCC = 1 V
IVCCcharge3 -
1
-
mA
VVCC =VVCCon -0.2 V
Maximum Input Current of Startup Cell
and CoolMOS™
IDrainIn
-
-
2
mA
VVCC =VVCCon -0.2 V
Leakage Current of
Startup Cell and CoolMOS™
IDrainLeak
-
0.2
50
μA
VDrain = 600 V at Tj=100 °C
Supply Current in normal operation
IVCCNM
-
1.5
2.3
mA
IFB = 0 A
Supply Current in
Auto Restart Mode with Inactive Gate
IVCCAR
-
300
-
μA
IFB = 0 A
Supply Current in Latch-off Mode
IVCClatch
-
300
-
μA
IFB = 0 A
Supply Current in Burst Mode with
inactive Gate
IVCCburst
-
500
950
μA
VFB = 2.5 V, exclude the
current flowing out from
FB pin
VCC Turn-On Threshold
VVCCon
17.0
18.0
19.0
V
VCC Turn-Off Threshold
VVCCoff
9.8
10.5
11.2
V
VCC Turn-On/Off Hysteresis
VVCChys
-
7.5
-
V
Data Sheet
14
Revision 2.3
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.2
Table 7
Internal Voltage Reference
Internal Voltage Reference
Parameter
Symbol Limit Values
Trimmed Reference Voltage
4.3.3
Table 8
VREF
min.
typ.
max.
4.80
5.00
5.20
Unit
Test Condition
V
measured at pin FB
IFB = 0
Unit
Test Condition
PWM Section
PWM Section
Parameter
Symbol Limit Values
min.
typ.
max.
Feedback Pull-Up Resistor
RFB
14
23
33
kΩ
PWM-OP Gain
GPWM
3.18
3.3
-
-
Offset for Voltage Ramp
VPWM
0.6
0.7
-
V
22
30
41
μs
Maximum on time in normal operation tOnMax
4.3.4
Table 9
Current Sense
Current sense
Parameter
Symbol Limit Values
Unit
min.
typ.
max.
Peak current limitation in normal
operation
VCSth
0.97
1.03
1.09
V
Leading Edge Blanking time
tLEB
200
330
460
ns
Peak Current Limitation in Active Burst VCSB
Mode
0.29
0.34
0.39
V
4.3.5
Table 10
Test Condition
Soft Start
Soft Start
Parameter
Symbol Limit Values
Unit
min.
typ.
max.
8.5
12
-
ms
t
11
Internal regulation voltage at first step tVSS_S
SS1
-
3
-
ms
-
1.76
-
V
Internal regulation voltage step at soft VSS_S 1
start
-
0.56
-
V
Soft-Start time
Soft-start time step
tSS
1
SS_s
The parameter is not subjected to production test - verified by design/characterization
Data Sheet
15
Test Condition
1
Revision 2.3
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.6
Table 11
Foldback Point Correction
Foldback Point Correction
Parameter
Symbol Limit Values
min.
typ.
Unit
Test Condition
max.
ZC current first step threshold
IZC_FS
0.350 0.500
0.621
mA
ZC current last step threshold
IZC_LS
1.3
1.7
2.2
mA
CS threshold minimum
VCSMF
-
0.66
-
V
Izc=2.2 mA, VFB=3.8 V
Unit
Test Condition
4.3.7
Table 12
Digital Zero Crossing
Digital Zero Crossing
Parameter
Symbol Limit Values
min.
typ.
max.
Zero crossing threshold voltage
VZCCT
50
100
170
mV
Ringing suppression threshold
VZCRS
-
0.7
-
V
Minimum ringing suppression time
tZCRS1
1.62
2.5
4.5
μs
VZC > VZCRS
Maximum ringing suppression time
tZCRS2
-
25
-
μs
VZC < VZCRS
Threshold to set Up/Down Counter to
one
Threshold for downward counting at
low line
Threshold for upward counting at low
line
Threshold for downward counting at
high line
VFBR1
-
3.9
-
V
VFBZHL
-
3.2
-
V
VFBZLL
-
2.5
-
V
VFBZHH
-
2.9
-
V
Threshold for upward counting at
highline
VFBZLH
-
2.3
-
V
ZC current for IC switch threshold to
high line
IZCSH
-
1.3
-
mA
ZC current for IC switch threshold to
low line
Counter time1
IZCSL
-
0.8
-
mA
tCOUNT
-
48
-
ms
Maximum restart time in normal
operation
tOffMax
30
42
57.5
μs
The parameter is not subjected to production test - verified by design/characterization
Data Sheet
16
1
Revision 2.3
2017-09-12
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.8
Table 13
Active Burst Mode
Digital Zero Crossing
Parameter
Symbol Limit Values
Unit
min.
typ.
max.
VFBEB
-
1.25
-
NZC_ABM
-
7
-
Blanking time for entering Active
Burst Mode
tBEB
-
24
-
ms
Feedback voltage for leaving Active
Burst Mode
VFBLB
-
4.5
-
V
Feedback voltage for burst-on
VFBBOn
-
3.6
-
V
Feedback voltage for burst-off
VFBBOff
-
3.0
-
V
Fixed Switching Frequency in Active
Burst Mode
fsB
39
52
65
kHz
Max. Duty Cycle in Active Burst
Mode
DmaxB
-
0.5
-
Feedback voltage for entering Active
Burst
Mode
Minimum
Up/down value for entering
Test Condition
V
Active Burst Mode
4.3.9
Table 14
Protection
Protection
Parameter
Symbol Limit Values
Unit
min.
typ.
max.
24.0
25.0
26.0
V
Over Load or Open Loop Detection
VFBOLP
threshold for OLP protection at FB pin
-
4.5
-
V
Over Load or Open Loop Protection
Blanking Time
tOLP_B
20
30
44
ms
Output Overvoltage
detectionthreshold at the ZC pin
VZCOVP
3.55
3.7
3.84
V
Blanking time for Output Overvoltage
protection
Threshold for short winding
protection
Blanking time for short-winding
tZCOVP
-
100
-
μs
VCSSW
1.63
1.68
1.78
V
tCSSW
-
190
-
ns
TjCon
130
140
150
°C
VVCCPD
5.2
-
7.8
°C
VCC overvoltage threshold
protection
Over temperature protection1
Power Down Reset threshold for
Latched Mode
VVCCOVP
The parameter is not subjected to production test - verified by design/characterization
Data Sheet
17
Test Condition
After Latched Off Mode is
entered
1
Revision 2.3
2017-09-12
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
Note:
4.3.10
Table 15
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
& VVCCOVP
CoolMOS™ Section
CoolMOS™ Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
V(BR)DSS
650
-
-
V
Tj = 110 °C
Drain Source On-Resistance
RDSon
-
1.70
3.57
1.96
4.12
Ω
Tj = 25 °C
Tj=125 °C1
at ID = 1.5 A
Effective output capacitance, energy
related
Co(er)
-
11.631
-
pF
VDS = 0 V to 480 V
Rise Time
trise
-
302
-
ns
Fall Time
tfall
-
302
-
ns
The parameter is not subjected to production test - verified by design/characterization
Measured in a Typical Flyback Converter Application
Data Sheet
18
1
2
Revision 2.3
2017-09-12
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
CoolMOS™ Performance Characteristics
5
CoolMOS™ Performance Characteristics
Figure 10
Safe Operating Area (SOA) curve for ICE2QR1765G
Figure 11
Power dissipation; Ptot=f(Ta)
Data Sheet
19
Revision 2.3
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
CoolMOS™ Performance Characteristics
Figure 12
Data Sheet
Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA
20
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Input Power Curve
6
Input Power Curve
Two input power curves gives typical input power versus ambient temperature are showed below; Vin=85~265
VAC (Figure 13) and Vin=230 VAC (Figure 14). The curves are derived based on a typical discontinuous mode
flyback model which considers either 50 % duty ratio or 115 V maximum secondary to primary reflected voltage
(high priority). The calculation is based on no copper area as heatsink for the device. The input power already
includes power loss at input common mode choke and bridge rectifier and the CoolMOSTM. The device
saturation current (ID_plus @ Tj=125 °C) is also considered.
To estimate the out power of the device, it is simply multiplying the input power at a particular ambient
temperature with the estimated efficiency for the application. For example, a wide range input voltage (Figure
13), operating temperature is 50 °C, estimated efficiency is 85 %,the output power is 23.8 W (28 W*0.85).
Figure 13
Input power curve VIN=85~265 VAC; Pin=f(Ta)
Figure 14
Input power curve VIN=230 VAC; Pin=f(Ta)
Data Sheet
21
Revision 2.3
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Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Outline Dimension
7
Figure 15
Data Sheet
Outline Dimension
PG-DSO-12 (Pb-free lead plating Plastic Dual-in-Line Outline)
22
Revision 2.3
2017-09-12
Quasi-Resonant, 650V CoolSET™ in DS0-12 Package
Marking
8
Marking
Figure 16
Marking for ICE2QR1765G
Revision History
Major changes since the last revision
Page or Reference
1, 23
Data Sheet
Description of change
Revise wrong marking text
23
Revision 2.3
2017-09-12
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™,
EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™,
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PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
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All referenced product or service names and trademarks are the property of their respective owners.
Edition 2017-09-12
Published by
Infineon Technologies AG
81726 München, Germany
ifx1owners.
© 2017 Infineon Technologies AG.
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