ICE2QR2280Z1XKLA1

D at a s h e et , V er s io n 2 . 1, M a r c h 7, 20 1 3 ® C o ol SE T - Q1 I CE2 Q R22 8 0 Z- 1 O f f- Li ne S M P S Q u as i -R e so n an t P W M C o nt r o l l e r w i t h i n te g r at ed 80 0V C oo l M O S ® and startup cell in DIP-7 Po wer Ma nagem ent & Suppl y N e v e r s t o p t h i n k i n g . CoolSET® - Q1 ICE2QR2280Z-1 Revision History: March 7, 2013 Datasheet Version 2.1 Previous Version: 2.0 Page Subjects (major changes since last revision) 10, 11 Revised typo. 16 Add VVCCPD For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http:// www.infineon.com CoolMOS ®, CoolSET® are trademarks of Infineon Technologies AG. 1st Edition 2013-01-28 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 3/7/13. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. CoolSET® - Q1 ICE2QR2280Z-1 Off-Line SMPS Quasi-Resonant PWM Controller with integrated 800V CoolMOS® and startup cell in DIP-7 Product Highlights • • • • • Quasi resonant operation Active Burst Mode to reach the lowest standby power requirement VZCRS Maximum ringing suppression time tZCRS2 - 25 - ms VZC < VZCRS Threshold to set Up/Down Counter to one VFBR1 - 3.9 - V Threshold for downward counting at low line VFBZHL - 3.2 - V Threshold for upward counting at low line VFBZLL - 2.5 - V Threshold for downward counting at high line VFBZHH - 2.9 - V Threshold for upward counting at high line VFBZLH - 2.3 - V ZC current for IC switch threshold to high line IZCSH - 1.3 - mA ZC current for IC switch threshold to low line IZCSL - 0.8 - mA Counter time 1) tCOUNT - 48 - ms Maximum restart time in normal operation tOffMax 30 42 57.5 ms 1) The parameter is not subjected to production test - verified by design/characterization 4.3.8 Active Burst Mode Parameter Symbol Limit Values min. typ. max. Unit Feedback voltage for entering Active Burst Mode VFBEB - 1.25 - Minimum Up/down value for entering Active Burst Mode NZC_ABM - 7 - Blanking time for entering Active Burst Mode tBEB - 24 - ms Feedback voltage for leaving Active Burst Mode VFBLB - 4.5 - V Feedback voltage for burst-on VFBBOn - 3.6 - V Feedback voltage for burst-off VFBBOff - 3.0 - V Fixed Switching Frequency in Active Burst Mode fsB 39 52 65 kHz - 0.5 - Max. Duty Cycle in Active Burst Mode DmaxB Version 2.1 15 Test Condition V March 7, 2013 CoolSET® - Q1 ICE2QR2280Z-1 Electrical Characteristics 4.3.9 Protection Parameter Symbol Limit Values Unit min. typ. max. 24.0 25.0 26.0 V Over Load or Open Loop Detection VFBOLP threshold for OLP protection at FB pin - 4.5 - V Over Load or Open Loop Protection Blanking Time tOLP_B 20 30 44 ms Output Overvoltage detection threshold at the ZC pin VZCOVP 3.55 3.7 3.84 V Blanking time for Output Overvoltage protection tZCOVP - 100 - ms Threshold for short winding protection VCSSW 1.63 1.68 1.78 V Blanking time for short-winding protection tCSSW - 190 - ns Over temperature protection1) TjCon 130 140 150 °C Power Down Reset for Latched Mode VVCCPD 5.2 - 7.8 V VCC overvoltage threshold Note: VVCCOVP Test Condition After Latched Off Mode is entered The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP & VVCCPD. 4.3.10 CoolMOS ® Section Parameter Symbol Limit Values min. typ. max. Unit Test Condition Drain Source Breakdown Voltage V(BR)DSS 800 870 - - V Tj = 25°C Tj = 110°C Drain Source On-Resistance RDSon1 - 2.26 5.02 6.14 2.62 5.81 7.1 W W W Tj = 25°C Tj=125°C1) Tj=150°C1) at ID = 0.81A Effective output capacitance, energy related Co(er) - 16.3 1) - pF VDS = 0V to 480V Rise Time trise - 30 2) - ns Fall Time tfall - 30 2) - ns 1) The parameter is not subjected to production test - verified by design/characterization 2) Measured in a Typical Flyback Converter Application Version 2.1 16 March 7, 2013 CoolSET® - Q1 ICE2QR2280Z-1 Typical CoolMOS® Performance Characteristic 5 Typical CoolMOS® Performance Characteristic Figure 9 Drain-Source Breakdown voltage; VBR(DSS)=f(T j),ID=0.25mA Figure 10 Safe Operating Area (SOA) for ICE2QR2280Z-1 Version 2.1 17 March 7, 2013 CoolSET® - Q1 ICE2QR2280Z-1 Input Power Curve 6 Input Power Curve Two input power curves gives typical input power versus ambient temperature are showed below; Vin=85~265Vac(Figure 11) and Vin=230Vac(Figure 12). The curves are derived based on a typical discontinuous mode flyback model which considers 150V maximum secondary to primary reflected voltage. The calculation is based on 232mm2, 2 ounce copper area as heatsink for the device. The input power already includes power loss at input common mode choke and bridge rectifier and the CoolMOS®. The device saturation current (ID_plus@T j=125 °C) is also considered. To estimate the out power of the device, it is simply multiplying the input power at a particular ambient temperature with the estimated efficiency for the application. For example, a wide range input voltage(Figure 11), operating temperature is 50 °C, estimated efficiency is 80%,the output power is 24.8W (31W*0.80) Input Power curve of ICE2QR2280Z Input Power(85Vac~265Vac)[W] 40 35 30 25 20 15 10 5 0 0 25 35 45 55 65 75 85 95 105 115 125 105 115 125 0 Ambient Temperature[ C] Figure 11 Input Power curve Vin=85~265Vac;Pin=f(Ta) Input Power curve of ICE2QR2280Z 70 Input Power(230Vac)[W] 60 50 40 30 20 10 0 0 25 35 45 55 65 75 85 95 0 Ambient Temperature[ C] Figure 12 Version 2.1 Input Power curve Vin=230Vac;Pin=f(Ta) 18 March 7, 2013 CoolSET® - Q1 ICE2QR2280Z-1 Outline dimension 7 Outline dimension PG-DIP-7 (Plastic Dual In-Line Outline) Figure 13 Version 2.1 PG-DIP-7 19 March 7, 2013 CoolSET® - Q1 ICE2QR2280Z-1 Marking 8 Marking Marking Figure 14 Version 2.1 Marking for ICE2QR2280Z-1 20 March 7, 2013 Total Quality Management Qualität hat für uns eine umfassende Bedeutung. Wir wollen allen Ihren Ansprüchen in der bestmöglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualität – unsere Anstrengungen gelten gleichermaßen der Lieferqualität und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Quality takes on an allencompassing significance at Semiconductor Group. For us it means living up to each and every one of your demands in the best possible way. So we are not only concerned with product quality. We direct our efforts equally at quality of supply and logistics, service and support, as well as all the other ways in which we advise and attend to you. Dazu gehört eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenüber Kollegen, Lieferanten und Ihnen, unserem Kunden. Unsere Leitlinie ist jede Aufgabe mit „Null Fehlern“ zu lösen – in offener Sichtweise auch über den eigenen Arbeitsplatz hinaus – und uns ständig zu verbessern. Part of this is the very special attitude of our staff. Total Quality in thought and deed, towards co-workers, suppliers and you, our customer. Our guideline is “do everything with zero defects”, in an open manner that is demonstrated beyond your immediate workplace, and to constantly improve. Unternehmensweit orientieren wir uns dabei auch an „top“ (Time Optimized Processes), um Ihnen durch größere Schnelligkeit den entscheidenden Wettbewerbsvorsprung zu verschaffen. Geben Sie uns die Chance, hohe Leistung durch umfassende Qualität zu beweisen. Wir werden Sie überzeugen. http://www.infineon.com Published by Infineon Technologies AG Throughout the corporation we also think in terms of Time Optimized Processes (top), greater speed on our part to give you that decisive competitive edge. Give us the chance to prove the best of performance through the best of quality – you will be convinced.