D a ta s h e et , V e r s i o n 2 .3 , 0 2 A p r 20 1 3
C o ol SE T ™ -F3
I C E 3 A( B )0 36 5/ 0 56 5/ 1 06 5/ 15 65
I C E 3 A( B )2 06 5/ 2 56 5
I C E 3 A0 56 5Z / 2 06 5Z
I C E 3 A( B )2 06 5I / 3 06 5I / 35 65 I
I C E 3 A( B )5 06 5I / 5 56 5I
I C E 3 A( B )2 06 5P / 30 65 P / 3 56 5P
I C E 3 A( B )5 06 5P / 55 65 P
O f f - Li ne S M P S C ur re nt Mo de
C on t ro ll er w it h in t e gr at e d 6 50 V
S t a rt u p C e ll / D ep le t io n C o ol M O S ™
Pow er Man ag e m e n t & Su p p l y
N e v e r
s t o p
t h i n k i n g .
CoolSET™-F3
Revision History:
2013-04-02
Datasheet
Previous Version: V2.2
Page
Subjects (major changes since last revision)
29
revised outline dimension for PG-DIP-8
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or
the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://
www.infineon.com
CoolMOS™, CoolSET™ are trademarks of Infineon Technologies AG.
Edition 2013-04-02
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2012 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
CoolSET™-F3
Off-Line SMPS Current Mode Controller
with integrated 650V Startup Cell/
Depletion CoolMOS™
PG-DIP-7-1
Product Highlights
• Best in class in DIP7, DIP8, TO220/I2Pak packages
• Active Burst Mode to reach the lowest Standby Power
Requirements < 100mW
• Protection features (Auto Restart Mode) to increase
robustness and safety of the system
• Adjustable Blanking Window for high load jumps to
increase system reliability
• Isolated drain package for TO220/I2Pak
• Wide creepage distance for DIP7/TO220/I2Pak
• Wide power class of products for various applications
• Pb-free lead plating for all packages; RoHS compliant
PG-DIP-8
PG-TO220-6-46 (I2Pak)
PG-TO220-6-47
Features
Description
•
The new generation CoolSET™-F3 provides Active Burst
Mode to reach the lowest Standby Power Requirements
5V
Clamped V SoftS Voltage during
Normal Operating Mode
VSoftSclmp
4.23
4.40
4.57
V
VFB = 4V
Activation Limit of
Comparator C3
VSoftSC3
5.20
5.40
5.60
V
VFB > 5V
SoftS Startup Current
ISoftSstart
-
1.3
-
mA
VSoftS = 0V
Over Load & Open Loop Detection
Limit for Comparator C4
VFBC4
4.62
4.80
4.98
V
VSoftS > 5.6V
Active Burst Mode Level for
Comparator C5
VFBC5
1.23
1.30
1.37
V
VSoftS > 5.6V
Active Burst Mode Level for
Comparator C6a
VFBC6a
3.85
4.00
4.15
V
After Active Burst
Mode is entered
Active Burst Mode Level for
Comparator C6b
VFBC6b
3.25
3.40
3.55
V
After Active Burst
Mode is entered
Overvoltage Detection Limit
VVCCOVP
16.1
17.1
18.1
V
VFB > 5V
VSoftS < 4.0V
Thermal Shutdown1)
TjSD
130
140
150
°C
Spike Blanking
tSpike
-
8.0
-
ms
1)
The parameter is not subjected to production test - verified by design/characterization
Note:
The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
and V VCCPD
4.3.6
Current Limiting
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
dVsense / dt = 0.6V/ms
(see Figure 16)
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.97
1.02
1.07
V
Peak Current Limitation during
Active Burst Mode
VCS2
0.232
0.257
0.282
V
Leading Edge Blanking
tLEB
-
220
-
ns
VSoftS = 4.4V
CS Input Bias Current
ICSbias
-1.0
-0.2
0
mA
VCS =0V
Version 2.3
26
02 Apr 2013
CoolSET™-F3
4.3.7
Electrical Characteristics
CoolMOS™ Section
Parameter
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
ICE3Axx65/xx65I/xx65P
ICE3Bxx65/xx65I/xx65P
V(BR)DSS
600
650
-
-
V
V
Tj = 25°C
Tj = 110°C
Drain Source
On-Resistance
ICE3A0365
ICE3B0365
RDSon1
-
6.45
13.7
7.50
17.0
W
W
Tj = 25°C
Tj=125°C1)
at ID = 0.3A
ICE3A0565
ICE3A0565Z
ICE3B0565
RDSon2
-
4.70
10.0
5.44
12.5
W
W
Tj = 25°C
Tj=125°C1)
at ID = 0.5A
ICE3A1065
ICE3B1065
RDSon3
-
2.95
6.6
3.42
7.56
W
W
Tj = 25°C
Tj=125°C1)
at ID = 1.0A
ICE3A1565
ICE3B1565
RDSon4
-
1.70
3.57
1.96
4.12
W
W
Tj = 25°C
Tj=125°C1)
at ID = 1.5A
ICE3A2065
ICE3A2065Z
ICE3B2065
RDSon5
-
0.92
1.93
1.05
2.22
W
W
Tj = 25°C
Tj=125°C1)
at ID = 2.0A
ICE3A2565
ICE3B2565
RDSon6
-
0.65
1.37
0.75
1.58
W
W
Tj = 25°C
Tj=125°C1)
at ID = 2.5A
ICE3A2065I
ICE3A2065P
ICE3B2065I
ICE3B2065P
RDSon7
-
3.00
6.6
3.47
7.63
W
W
Tj = 25°C
Tj=125°C1)
at ID =1.0A
ICE3A3065I
ICE3A3065P
ICE3B3065I
ICE3B3065P
RDSon8
-
2.10
4.41
2.43
5.10
W
W
Tj = 25°C
Tj=125°C1)
at ID = 1.5A
ICE3A3565I
ICE3A3565P
ICE3B3565I
ICE3B3565P
RDSon9
-
1.55
3.26
1.80
3.78
W
W
Tj = 25°C
Tj=125°C1)
at ID = 1.8A
ICE3A5065I
ICE3A5065P
ICE3B5065I
ICE3B5065P
RDSon10
0.95
2.00
1.10
2.31
W
W
Tj = 25°C
Tj=125°C1)
at ID = 2.5A
ICE3A5565I
ICE3A5565P
ICE3B5565I
ICE3B5565P
RDSon11
0.79
1.68
0.91
1.92
W
W
Tj = 25°C
Tj=125°C1)
at ID = 2.8A
Drain Source
On-Resistance
Version 2.3
-
27
02 Apr 2013
CoolSET™-F3
Electrical Characteristics
Parameter
Effective output
capacitance,
energy related
Symbol
Limit Values
min.
typ.
max.
Unit
Test Condition
VDS = 0V to 480V
ICE3A0365
ICE3B0365
Co(er)1
-
3.65
-
pF
ICE3A0565
ICE3A0565Z
ICE3B0565
Co(er)2
-
4.75
-
pF
ICE3A1065
ICE3B1065
Co(er)3
-
7.0
-
pF
ICE3A1565
ICE3B1565
Co(er)4
-
11.63
-
pF
ICE3A2065
ICE3A2065Z
ICE3B2065
Co(er)5
-
21
-
pF
ICE3A2565
ICE3B2565
Co(er)6
-
26.0
-
pF
ICE3A2065I
ICE3A2065P
ICE3B2065I
ICE3B2065P
Co(er)7
-
7.0
-
pF
ICE3A3065I
ICE3A3065P
ICE3B3065I
ICE3B3065P
Co(er)8
-
10.0
-
pF
ICE3A3565I
ICE3A3565P
ICE3B3565I
ICE3B3565P
Co(er)9
-
14.0
-
pF
ICE3A5065I
ICE3A5065P
ICE3B5065I
ICE3B5065P
Co(er)10
-
20.5
-
pF
ICE3A5565I
ICE3A5565P
ICE3B5565I
ICE3B5565P
Co(er)11
-
23.0
-
pF
Rise Time
trise
-
302)
-
ns
Fall Time
tfall
-
302)
-
ns
Effective output
capacitance,
energy related
VDS = 0V to 480V
1)
The parameter is not subjected to production test - verified by design/characterization
2)
Measured in a Typical Flyback Converter Application
Version 2.3
28
02 Apr 2013
CoolSET™-F3
5
Outline Dimension
Outline Dimension
PG-DIP-8
(Plastic Dual In-Line Package)
Figure 21 PG-DIP-8 (Pb-free lead plating Plastic Dual In-Line Outline)
Version 2.3
29
02 Apr 2013
CoolSET™-F3
Outline Dimension
PG-DIP-7-1
(Plastic Dual In-Line package)
Figure 22 PG-DIP-7-1 (Pb-free lead plating Plastic Dual In-Line Outline)
Version 2.3
30
02 Apr 2013
CoolSET™-F3
Outline Dimension
PG-TO220-6-46
(Isodrain I2Pak Package)
Figure 23 PG-TO220-6-46 (Pb-free lead plating Isodrain I2Pak Package)
PG-TO220-6-47
(Isodrain Package)
Figure 24 PG-TO220-6-47 (Pb-free lead plating Isodrain Package)
Dimensions in mm
Version 2.3
31
02 Apr 2013
Total Quality Management
Qualität hat für uns eine umfassende
Bedeutung. Wir wollen allen Ihren
Ansprüchen in der bestmöglichen
Weise gerecht werden. Es geht uns also
nicht nur um die Produktqualität –
unsere Anstrengungen gelten
gleichermaßen der Lieferqualität und
Logistik, dem Service und Support
sowie allen sonstigen Beratungs- und
Betreuungsleistungen.
Quality takes on an allencompassing
significance at Semiconductor Group.
For us it means living up to each and
every one of your demands in the best
possible way. So we are not only
concerned with product quality. We
direct our efforts equally at quality of
supply and logistics, service and
support, as well as all the other ways in
which we advise and attend to you.
Dazu gehört eine bestimmte
Geisteshaltung unserer Mitarbeiter.
Total Quality im Denken und Handeln
gegenüber Kollegen, Lieferanten und
Ihnen, unserem Kunden. Unsere
Leitlinie ist jede Aufgabe mit „Null
Fehlern“ zu lösen – in offener
Sichtweise auch über den eigenen
Arbeitsplatz hinaus – und uns ständig
zu verbessern.
Part of this is the very special attitude of
our staff. Total Quality in thought and
deed, towards co-workers, suppliers
and you, our customer. Our guideline is
“do everything with zero defects”, in an
open manner that is demonstrated
beyond your immediate workplace, and
to constantly improve.
Unternehmensweit orientieren wir uns
dabei auch an „top“ (Time Optimized
Processes), um Ihnen durch größere
Schnelligkeit den entscheidenden
Wettbewerbsvorsprung zu verschaffen.
Geben Sie uns die Chance, hohe
Leistung durch umfassende Qualität zu
beweisen.
Wir werden Sie überzeugen.
http://www.infineon.com
Published by Infineon Technologies AG
Throughout the corporation we also
think in terms of Time Optimized
Processes (top), greater speed on our
part to give you that decisive
competitive edge.
Give us the chance to prove the best of
performance through the best of quality
– you will be convinced.
很抱歉,暂时无法提供与“ICE3A2065ZXKLA1”相匹配的价格&库存,您可以联系我们找货
免费人工找货