ICE3B0565XKLA1

D a ta s h e et , V e r s i o n 2 .3 , 0 2 A p r 20 1 3 C o ol SE T ™ -F3 I C E 3 A( B )0 36 5/ 0 56 5/ 1 06 5/ 15 65 I C E 3 A( B )2 06 5/ 2 56 5 I C E 3 A0 56 5Z / 2 06 5Z I C E 3 A( B )2 06 5I / 3 06 5I / 35 65 I I C E 3 A( B )5 06 5I / 5 56 5I I C E 3 A( B )2 06 5P / 30 65 P / 3 56 5P I C E 3 A( B )5 06 5P / 55 65 P O f f - Li ne S M P S C ur re nt Mo de C on t ro ll er w it h in t e gr at e d 6 50 V S t a rt u p C e ll / D ep le t io n C o ol M O S ™ Pow er Man ag e m e n t & Su p p l y N e v e r s t o p t h i n k i n g . CoolSET™-F3 Revision History: 2013-04-02 Datasheet Previous Version: V2.2 Page Subjects (major changes since last revision) 29 revised outline dimension for PG-DIP-8 For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http:// www.infineon.com CoolMOS™, CoolSET™ are trademarks of Infineon Technologies AG. Edition 2013-04-02 Published by Infineon Technologies AG, 81726 Munich, Germany, © 2012 Infineon Technologies AG. All Rights Reserved. Legal disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies Office. Infineon Technologies Components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. CoolSET™-F3 Off-Line SMPS Current Mode Controller with integrated 650V Startup Cell/ Depletion CoolMOS™ PG-DIP-7-1 Product Highlights • Best in class in DIP7, DIP8, TO220/I2Pak packages • Active Burst Mode to reach the lowest Standby Power Requirements < 100mW • Protection features (Auto Restart Mode) to increase robustness and safety of the system • Adjustable Blanking Window for high load jumps to increase system reliability • Isolated drain package for TO220/I2Pak • Wide creepage distance for DIP7/TO220/I2Pak • Wide power class of products for various applications • Pb-free lead plating for all packages; RoHS compliant PG-DIP-8 PG-TO220-6-46 (I2Pak) PG-TO220-6-47 Features Description • The new generation CoolSET™-F3 provides Active Burst Mode to reach the lowest Standby Power Requirements 5V Clamped V SoftS Voltage during Normal Operating Mode VSoftSclmp 4.23 4.40 4.57 V VFB = 4V Activation Limit of Comparator C3 VSoftSC3 5.20 5.40 5.60 V VFB > 5V SoftS Startup Current ISoftSstart - 1.3 - mA VSoftS = 0V Over Load & Open Loop Detection Limit for Comparator C4 VFBC4 4.62 4.80 4.98 V VSoftS > 5.6V Active Burst Mode Level for Comparator C5 VFBC5 1.23 1.30 1.37 V VSoftS > 5.6V Active Burst Mode Level for Comparator C6a VFBC6a 3.85 4.00 4.15 V After Active Burst Mode is entered Active Burst Mode Level for Comparator C6b VFBC6b 3.25 3.40 3.55 V After Active Burst Mode is entered Overvoltage Detection Limit VVCCOVP 16.1 17.1 18.1 V VFB > 5V VSoftS < 4.0V Thermal Shutdown1) TjSD 130 140 150 °C Spike Blanking tSpike - 8.0 - ms 1) The parameter is not subjected to production test - verified by design/characterization Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP and V VCCPD 4.3.6 Current Limiting Parameter Symbol Limit Values min. typ. max. Unit Test Condition dVsense / dt = 0.6V/ms (see Figure 16) Peak Current Limitation (incl. Propagation Delay) Vcsth 0.97 1.02 1.07 V Peak Current Limitation during Active Burst Mode VCS2 0.232 0.257 0.282 V Leading Edge Blanking tLEB - 220 - ns VSoftS = 4.4V CS Input Bias Current ICSbias -1.0 -0.2 0 mA VCS =0V Version 2.3 26 02 Apr 2013 CoolSET™-F3 4.3.7 Electrical Characteristics CoolMOS™ Section Parameter Symbol Limit Values min. typ. max. Unit Test Condition Drain Source Breakdown Voltage ICE3Axx65/xx65I/xx65P ICE3Bxx65/xx65I/xx65P V(BR)DSS 600 650 - - V V Tj = 25°C Tj = 110°C Drain Source On-Resistance ICE3A0365 ICE3B0365 RDSon1 - 6.45 13.7 7.50 17.0 W W Tj = 25°C Tj=125°C1) at ID = 0.3A ICE3A0565 ICE3A0565Z ICE3B0565 RDSon2 - 4.70 10.0 5.44 12.5 W W Tj = 25°C Tj=125°C1) at ID = 0.5A ICE3A1065 ICE3B1065 RDSon3 - 2.95 6.6 3.42 7.56 W W Tj = 25°C Tj=125°C1) at ID = 1.0A ICE3A1565 ICE3B1565 RDSon4 - 1.70 3.57 1.96 4.12 W W Tj = 25°C Tj=125°C1) at ID = 1.5A ICE3A2065 ICE3A2065Z ICE3B2065 RDSon5 - 0.92 1.93 1.05 2.22 W W Tj = 25°C Tj=125°C1) at ID = 2.0A ICE3A2565 ICE3B2565 RDSon6 - 0.65 1.37 0.75 1.58 W W Tj = 25°C Tj=125°C1) at ID = 2.5A ICE3A2065I ICE3A2065P ICE3B2065I ICE3B2065P RDSon7 - 3.00 6.6 3.47 7.63 W W Tj = 25°C Tj=125°C1) at ID =1.0A ICE3A3065I ICE3A3065P ICE3B3065I ICE3B3065P RDSon8 - 2.10 4.41 2.43 5.10 W W Tj = 25°C Tj=125°C1) at ID = 1.5A ICE3A3565I ICE3A3565P ICE3B3565I ICE3B3565P RDSon9 - 1.55 3.26 1.80 3.78 W W Tj = 25°C Tj=125°C1) at ID = 1.8A ICE3A5065I ICE3A5065P ICE3B5065I ICE3B5065P RDSon10 0.95 2.00 1.10 2.31 W W Tj = 25°C Tj=125°C1) at ID = 2.5A ICE3A5565I ICE3A5565P ICE3B5565I ICE3B5565P RDSon11 0.79 1.68 0.91 1.92 W W Tj = 25°C Tj=125°C1) at ID = 2.8A Drain Source On-Resistance Version 2.3 - 27 02 Apr 2013 CoolSET™-F3 Electrical Characteristics Parameter Effective output capacitance, energy related Symbol Limit Values min. typ. max. Unit Test Condition VDS = 0V to 480V ICE3A0365 ICE3B0365 Co(er)1 - 3.65 - pF ICE3A0565 ICE3A0565Z ICE3B0565 Co(er)2 - 4.75 - pF ICE3A1065 ICE3B1065 Co(er)3 - 7.0 - pF ICE3A1565 ICE3B1565 Co(er)4 - 11.63 - pF ICE3A2065 ICE3A2065Z ICE3B2065 Co(er)5 - 21 - pF ICE3A2565 ICE3B2565 Co(er)6 - 26.0 - pF ICE3A2065I ICE3A2065P ICE3B2065I ICE3B2065P Co(er)7 - 7.0 - pF ICE3A3065I ICE3A3065P ICE3B3065I ICE3B3065P Co(er)8 - 10.0 - pF ICE3A3565I ICE3A3565P ICE3B3565I ICE3B3565P Co(er)9 - 14.0 - pF ICE3A5065I ICE3A5065P ICE3B5065I ICE3B5065P Co(er)10 - 20.5 - pF ICE3A5565I ICE3A5565P ICE3B5565I ICE3B5565P Co(er)11 - 23.0 - pF Rise Time trise - 302) - ns Fall Time tfall - 302) - ns Effective output capacitance, energy related VDS = 0V to 480V 1) The parameter is not subjected to production test - verified by design/characterization 2) Measured in a Typical Flyback Converter Application Version 2.3 28 02 Apr 2013 CoolSET™-F3 5 Outline Dimension Outline Dimension PG-DIP-8 (Plastic Dual In-Line Package) Figure 21 PG-DIP-8 (Pb-free lead plating Plastic Dual In-Line Outline) Version 2.3 29 02 Apr 2013 CoolSET™-F3 Outline Dimension PG-DIP-7-1 (Plastic Dual In-Line package) Figure 22 PG-DIP-7-1 (Pb-free lead plating Plastic Dual In-Line Outline) Version 2.3 30 02 Apr 2013 CoolSET™-F3 Outline Dimension PG-TO220-6-46 (Isodrain I2Pak Package) Figure 23 PG-TO220-6-46 (Pb-free lead plating Isodrain I2Pak Package) PG-TO220-6-47 (Isodrain Package) Figure 24 PG-TO220-6-47 (Pb-free lead plating Isodrain Package) Dimensions in mm Version 2.3 31 02 Apr 2013 Total Quality Management Qualität hat für uns eine umfassende Bedeutung. Wir wollen allen Ihren Ansprüchen in der bestmöglichen Weise gerecht werden. Es geht uns also nicht nur um die Produktqualität – unsere Anstrengungen gelten gleichermaßen der Lieferqualität und Logistik, dem Service und Support sowie allen sonstigen Beratungs- und Betreuungsleistungen. Quality takes on an allencompassing significance at Semiconductor Group. For us it means living up to each and every one of your demands in the best possible way. So we are not only concerned with product quality. We direct our efforts equally at quality of supply and logistics, service and support, as well as all the other ways in which we advise and attend to you. Dazu gehört eine bestimmte Geisteshaltung unserer Mitarbeiter. Total Quality im Denken und Handeln gegenüber Kollegen, Lieferanten und Ihnen, unserem Kunden. Unsere Leitlinie ist jede Aufgabe mit „Null Fehlern“ zu lösen – in offener Sichtweise auch über den eigenen Arbeitsplatz hinaus – und uns ständig zu verbessern. Part of this is the very special attitude of our staff. Total Quality in thought and deed, towards co-workers, suppliers and you, our customer. Our guideline is “do everything with zero defects”, in an open manner that is demonstrated beyond your immediate workplace, and to constantly improve. Unternehmensweit orientieren wir uns dabei auch an „top“ (Time Optimized Processes), um Ihnen durch größere Schnelligkeit den entscheidenden Wettbewerbsvorsprung zu verschaffen. Geben Sie uns die Chance, hohe Leistung durch umfassende Qualität zu beweisen. Wir werden Sie überzeugen. http://www.infineon.com Published by Infineon Technologies AG Throughout the corporation we also think in terms of Time Optimized Processes (top), greater speed on our part to give you that decisive competitive edge. Give us the chance to prove the best of performance through the best of quality – you will be convinced.