ICE3RBR0665JG
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Product Highlights
Active Burst Mode to reach the lowest Standby Power 20.5 V & FB > 4 V & during soft start period & last for 30 µs
2. VVCC > 25.5 V & last for (120+30) µs (inactivated during burst
mode)
Overtemperature
(controller junction)
TJ > 140 ⁰C & last of 30 µs
Auto Restart
Overload/Open Loop
VFB > 4 V & last for 20ms & VBA > 4.0 V & last for 30 µs
(extended blanking time counted from charging VBA from 0.9 V to
4.0 V )
Auto Restart
VCC Undervoltage/
Short Optocoupler
VVCC < 10.5 V & last for 10 ms + 30 µs
Auto Restart
Auto restart enable
VBA < 0.33 V & last for 30 µs
Auto Restart
After the system enters the Auto-restart mode, the IC will be off. Since there is no more switching, the VCC
voltage will drop. When it hits the Vcc turn off threshold, the start up cell will turn on and the Vcc is charged by
the startup cell current to VCC turn on threshold. The IC is on and the startup cell will turn off. At this stage, it
will enter the startup phase (soft start) with switching cycles. After the Start Up Phase, the fault condition is
checked. If the fault condition persists, the IC will go to auto restart mode again. If, otherwise, the fault is
removed, normal operation is resumed.
3.7.3.1
Auto Restart mode with extended blanking time
5.0V
IBK
BA
Auto
Restart
Mode
C3
# CBK
4.0V
0.9V
&
1
S1
G2
4.0V
FB
G5
C4
Spike
Blanking
8.0us
20ms
Blanking
Time
Control Unit
Figure 26
Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds 4.0 V which will be observed by comparator C4. Then the
internal blanking counter starts to count. When it reaches 20 ms, the switch S1 is released. Then the clamped
voltage 0.9 V at VBA can increase. When there is no external capacitor CBK connected, the VBA will reach 4.0 V
immediately. When both the input signals at AND gate G5 is positive, the Auto Restart Mode will be activated
after the extra spike blanking time of 30 µs is elapsed. However, when an extra blanking time is needed, it can be
Data Sheet
18
Revision 1.1
2017-06-13
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Functional Description
achieved by adding an external capacitor, CBK. A constant current source of IBK will start to charge the capacitor
CBK from 0.9 V to 4.0 V after the switch S1 is released. The charging time from 0.9 V to 4.0 V are the extendable
blanking time. If CBK is 0.22 µF and IBK is 13 µA, the extendable blanking time is around 52 ms and the total
blanking time is 72 ms. In combining the FB and blanking time, there is a blanking window generated which
prevents the system to enter Auto Restart Mode due to large load jumps.
3.7.3.2
Auto Restart mode without extended blanking time
1ms
counter
Auto-restart
Enable
Signal
UVLO
BA
0.33V
Stop
gate
drive
8us
Blanking
Time
C9
Auto Restart
mode
25.5V
TAE
VCC
Auto Restart
Mode Reset
VVCC < 10.5V
120us
Blanking
Time
C2
softs_period
&
VCC
C1
Spike
Blanking
30us
G1
20.5V
Voltage
Reference
4.0V
C4
FB
Thermal Shutdown
Tj >130°C
Control Unit
Figure 27
Over load, open loop protection
There are 2 modes of VCC overvoltage protection; one is during soft start and the other is at all conditions.
The first one is VVCC voltage is > 20.5 V and FB is > 4.0 V and during soft start period and the IC enters Auto Restart
Mode. The VCC voltage is observed by comparator C1 and C4. The fault conditions are to detect the abnormal
operating during start up such as open loop during light load start up, etc. The logic can eliminate the possible
of entering Auto Restart mode if there is a small voltage overshoots of VVCC during normal operating.
The 2nd one is VVCC >25.5 V and last for 120 µs and the IC enters Auto Restart Mode. This 25.5 V VCC OVP
protection is inactivated during burst mode.
The Thermal Shutdown block monitors the junction temperature of the IC. After detecting a junction
temperature higher than 130 °C, the Auto Restart Mode is entered.
In case the pre-defined auto-restart features are not sufficient, there is a customer defined external Auto-restart
Enable feature. This function can be triggered by pulling down the BA pin to < 0.33 V. It can simply add a trigger
signal to the base of the externally added transistor, TAE at the BA pin. When the function is enabled, the gate
drive switching will be stopped and then the IC will enter auto-restart mode if the signal persists. To ensure this
auto-restart function will not be mis-triggered during start up, a 1 ms delay time is implemented to blank the
unstable signal.
VCC undervoltage is the VCC voltage drop below Vcc turn off threshold. Then the IC will turn off and the start up
cell will turn on automatically. And this leads to Auto Restart Mode.
Short Optocoupler also leads to VCC undervoltage as there is no self supply after activating the internal
reference and bias.
Data Sheet
19
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4
Note:
4.1
Note:
Table 3
Electrical Characteristics
All voltages are measured with respect to ground (Pin 12). The voltage levels are valid if other ratings
are not violated.
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to
destruction of the integrated circuit. For the same reason make sure, that any capacitor that will be
connected to pin 11 (VCC) is discharged before assembling the application circuit. Ta=25°C unless
otherwise specified.
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Switching drain current, pulse width tp IS
limited by Tj=150 °C
Pulse drain current, pulse width tp
ID_Plus
limited by Tj=150 °C
-
9.95
A
-
15.75
A
Avalanche energy, repetitive tAR
limited by max. Tj=150 °C1
EAR
-
0.47
mJ
Avalanche current, repetitive tAR
limited by max. Tj=150 °C1
IAR
-
2.5
A
VCC Supply Voltage
VVCC
-0.3
27
V
FB Voltage
VFB
-0.3
5.5
V
BA Voltage
VBA
-0.3
5.5
V
CS Voltage
VCS
-0.3
5.5
V
Junction Temperature
Tj
-40
150
°C
Storage Temperature
TS
-55
150
°C
Thermal Resistance
(Junction–Ambient)
RthJA
-
110
K/W
Soldering temperature, wavesoldering
only
allowed at(incl.
leadsDrain Pin)
ESD Capability
Tsold
-
260
°C
VESD
-
2
kV
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
According to EIA/JESD22-A114-B (discharging a 100 pF capacitor through a 1.5 kW series resistor)
Data Sheet
20
Remarks
Controller & CoolMOS™
1.6 mm (0.063 in.) from case
for
10 s body model2
Human
1
2
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.2
Note:
Table 4
Absolute Maximum Ratings
Within the operating range the IC operates as described in the functional description.
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
min.
max.
Unit
Remarks
Max value limited due to Vcc
OVP
VCC Supply Voltage
VVCC
VVCCoff
25
V
Junction Temperature of Controller
TjCon
-40
130
°
Junction Temperature of CoolMOS™
TjCoolMOS
-40
150
°
4.3
Characteristics
4.3.1
Supply Section
Note:
Table 5
Max value limited due to
thermal shut down of
controller
C
C
The electrical characteristics involve the spread of values within the specified supply voltage and
junction temperature range TJ from – 40 °C to 125 °C. Typical values represent the median values, which
are related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Supply Section
Parameter
Symbol Limit Values
Unit
Test Condition
min.
typ.
max.
-
150
250
µA
VVCC =17 V
Start Up Current
IVCCstart
VCC Charge Current
IVCCcharge1 -
-
5.0
mA
VVCC = 0V
IVCCcharge2 0.55
0.9
1.60
mA
VVCC = 1 V
IVCCcharge3 -
0.7
-
mA
VVCC =17 V
Leakage Current of
Start Up Cell and CoolMOS™
IStartLeak
-
0.2
50
µA
VDrain = 450 V
at Tj=100 °C
Supply Current with
Inactive Gate
IVCCsup1
-
1.5
2.5
mA
Supply Current with Active Gate
IVCCsup2
-
3.8
4.2
mA
IFB = 0 A
Supply Current in
Auto Restart Mode with Inactive Gate
IVCCrestart
-
250
-
µA
IFB = 0 A
Supply Current in Active Burst Mode
with Inactive Gate
IVCCburst1
-
450
950
µA
VFB = 2.5 V
IVCCburst2
-
450
950
µA
VVCC = 11.5 V,VFB = 2.5 V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VVCCon
VVCCoff
VVCChys
17.0
9.8
-
18.0
10.5
7.5
19.0
11.2
-
V
V
V
Data Sheet
21
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.2
Table 6
Internal Voltage Reference
Internal Voltage Reference
Parameter
Symbol Limit Values
Trimmed Reference Voltage
4.3.3
Table 7
VREF
min.
typ.
max.
4.90
5.00
5.10
Unit
Test Condition
V
measured at pin FB IFB = 0
Unit
Test Condition
PWM Section
PWM Section
Parameter
Symbol Limit Values
min.
typ.
max.
fOSC1
54.5
65.0
73.5
kHz
fOSC2
59.8
65.0
70.2
kHz
Tj = 25°C
Frequency Jittering Range
fjitter
-
±2.6
-
kHz
Tj = 25°C
Frequency Jittering period
Tjitter
-
4.0
-
ms
Tj = 25°C
Max. Duty Cycle
Dmax
0.70
0.75
0.80
Min. Duty Cycle
Dmin
0
-
-
PWM-OP Gain
AV
3.1
3.3
3.5
Voltage Ramp Offset
VOffset-
-
0.67
-
V
VFB Operating Range Min Level
Ramp
V
FBmin
-
0.5
-
V
VFB Operating Range Max level
VFBmax
-
-
4.3
V
FB Pull-Up Resistor
RFB
9
15.4
23
kΩ
Fixed Oscillator Frequency
4.3.4
Table 8
Parameter
Soft Start time
VFB < 0.3 V
CS=1 V, limited by
Comparator C41
Soft Start time
Soft Start time
Symbol Limit Values
tSS
Unit
min.
typ.
max.
-
20
-
The parameter is not subjected to production test - verified by design/characterization
Data Sheet
22
Test Condition
ms
1
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.5
Table 9
Control Unit
Control Unit
Parameter
Symbol Limit Values
Unit
Test Condition
VFB = 4 V
min.
typ.
max.
VBAclmp
0.85
0.9
0.95
V
VBKC3
3.85
4.00
4.15
V
VFBC4
3.85
4.00
4.15
V
VFBC5
1.25
1.35
1.45
V
VFBC6a
3.35
3.50
3.65
V
VFBC6b
2.88
3.00
3.12
V
VVCCOVP1
19.5
20.5
21.5
V
VVCCOVP2
25.0
25.5
26.5
V
VAE
0.25
0.33
0.4
V
>30 ms
Charging current at BA pin
IBK
9.5
13.0
16.9
µA
Thermal Shutdown1
TjSD
130
140
150
°C
Charge starts after the
built-in 20 ms blanking
time elapsed
Controller
Built-in Blanking Time for Overload
Protection or enter Active Burst Mode
Inhibit Time for Auto-Restart enable
function
duringTime
start before
up
Spike Blanking
Auto-
tBK
-
20
-
ms
tIHAE
-
1.0
-
ms
tSpike
-
30
-
ms
Clamped VBA voltage during Normal
Operating Mode
Blanking time voltage limit for
Comparator C3
Over Load & Open Loop Detection
Limit for Comparator C4
Active Burst Mode Level for
Comparator
C5 Level for
Active Burst Mode
Comparator C6a
Active Burst Mode Level for
Comparator C6b
Overvoltage Detection Limit for
Comparator C1
Overvoltage Detection Limit for
Comparator C2
Auto-restart Enable level at BA pin
After Active Burst Mode is
entered
After Active Burst Mode is
entered
VFB = 5 V
without external capacitor
at BA pin
Count when VCC>18 V
Restart Protection
Note:
4.3.6
Table 10
The trend of all voltage levels in the Control Units is the same regarding the deviation except VVCCOVP
Current Limiting
Current Limiting
Parameter
Symbol Limit Values
min.
typ.
max.
Unit
Test Condition
dVsense / dt = 0.6 V/µs
(Figure 21)
Peak Current Limitation
(incl. Propagation Delay)
Vcsth
0.95
1.03
1.10
V
Peak Current Limitation during Active
Burst
Mode
Leading
Edge Blanking
VCS2
0.29
0.34
0.38
V
tLEB
-
220
-
ns
CS Input Bias Current
ICSbias
-1.6
-0.2
-
µA
VCS =0 V
The parameter is not subjected to production test - verified by design/characterization. The thermal shutdown temperature refers to the
junction temperature of the controller.
Data Sheet
23
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1
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Electrical Characteristics
4.3.7
Table 11
CoolMOS™ Section
CoolMOS™ Section
Parameter
Symbol Limit Values
min.
typ.
max.
Unit
Test Condition
Drain Source Breakdown Voltage
V(BR)DSS
650
-
-
V
Tj = 110 °C,
Refer to Figure 31 for
other V(BR)DSS in different Tj
Drain Source On-Resistance
RDSon
-
0.65
1.37
0.75
1.58
Ω
Tj = 25 °C
Tj=125 °C1 at ID = 2.5 A
Effective output capacitance, energy
related
Co(er)
-
26
-
pF
VDS = 0 V to 480 V1
Rise Time 2
trise
-
30
-
ns
Fall Time 2
tfall
-
30
-
ns
The parameter is not subjected to production test - verified by design/characterization
Measured in a Typical Flyback Converter Application
Data Sheet
24
1
2
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
CoolMOS™ Performance Characteristics
5
CoolMOS™ Performance Characteristics
Figure 28
Safe Operating Area (SOA) curve for ICE3RBR0665JG
Figure 29
SOA temperature derating coefficient curve
Data Sheet
25
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
CoolMOS™ Performance Characteristics
Figure 30
Power dissipation; Ptot=f(Ta)
Figure 31
Drain-source breakdown voltage; VBR(DSS)=f(Tj), ID=0.25mA
Data Sheet
26
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Input Power Curve
6
Input Power Curve
Two input power curves giving the typical input power versus ambient temperature are showed below; VIN=85
VAC~265 VAC (Figure 32) and VIN=230 VAC +/-15% (Figure 33). The curves are derived based on a typical
discontinuous mode flyback model which considers either 50% maximum duty ratio or 100 V maximum
secondary to primary reflected voltage (higher priority). The calculation is based on no copper area as heatsink
for the device. The input power already includes the power loss at input common mode choke, bridge rectifier
and the CoolMOS™.The device saturation current (ID_Puls @ Tj=125°C) is also considered.
To estimate the output power of the device, it is simply multiplying the input power at a particular operating
ambient temperature with the estimated efficiency for the application. For example, a wide range input voltage
(Figure 32), operating temperature is 50°C, estimated efficiency is 85%, then the estimated output power is 37 W
(43.83 W x 85%).
Figure 32
Input power curve VIN=85~265 VAC; Pin=f(Ta)
Figure 33
Input power curve VIN=230 VAC; Pin=f(Ta)
Data Sheet
27
Revision 1.1
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Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Outline Dimension
7
Figure 34
Data Sheet
Outline Dimension
PG-DSO-12 (Pb-free lead plating Plastic Dual-in-Line Outline)
28
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2017-06-13
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Marking
8
Figure 35
Data Sheet
Marking
Marking for ICE3RBR0665JG
29
Revision 1.1
2017-06-13
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Schematic for recommended PCB layout
9
Schematic for recommended PCB layout
Figure 36
Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET™ (Figure 36):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET™
device effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET™ device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector of
IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400 V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0 mm
b. 600 V traces (drain voltage of CoolSET™ IC11) to nearby trace: > 2.5 mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller
pin as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when > 3 kV lightning surge test applied (Figure 36)
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
Data Sheet
30
Revision 1.1
2017-06-13
Fixed-Frequency, 650V CoolSET™ in DS0-12 Package
Schematic for recommended PCB layout
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5 mm (no safety concern)
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is > 6 kV.
230 VAC input voltage application, the gap separation is around 5.5mm
115 VAC input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET™
and reduce the abnormal behavior of the CoolSET™. The diode can be a fast speed diode such as 1N4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing
through the sensitive components such as the primary controller, IC11.
Revision History
Major changes since the last revision
Page or Reference
1, 29
Data Sheet
Description of change
change marking
31
Revision 1.1
2017-06-13
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™, EasyPIM™,
EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™, ISOFACE™, IsoPACK™,
i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™,
PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2017-06-13
Published by
Infineon Technologies AG
81726 München, Germany
ifx1owners.
© 2017 Infineon Technologies AG.
All Rights Reserved.
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