ICE5QRxxxxAx
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and
DSO-12 Package
Product Highlights
Integrated 700 V/800 V avalanche rugged CoolMOS™
Novel Quasi-Resonant operation and proprietary implementation for low EMI
Enhanced Active Burst Mode with selectable entry and exit standby power
PG-DIP-7
Active Burst Mode to reach the lowest standby power VREF_B
VCS_BL1 = 0.31 V
0.90 V
2.75 V
2
VFB < VREF_B
VCS_BL2 = 0.35 V
1.05 V
2.75 V
During IC first startup, the internal RefGOOD signal is logic low when VCC < 4 V. It will reset the Burst Mode level
Detection latch. When the Burst Mode Level Detection latch is low and IC is in OFF state, the IC internal RFB
resistor is disconnected from the FB pin and a current source Isel is turned on instead.
From Vcc=4 V to Vcc on threshold, the FB pin will start to charge to a voltage level associated with RSel resistor.
When Vcc reaches Vcc on threshold, the FB voltage is sensed. The burst mode thresholds are then chosen
according to the FB voltage level. The Burst Mode Level Detection latch is then set to high. Once the detection
latch is set high, any change of the FB level will not change the threshold selection. The current source Isel is
turned off in 2 μs after VCC reaches VCC on threshold and the RFB resistor is re-connected to FB pin (see Figure 9).
Vdd
Isel
S2
UVLO
2μs
delay
R
RFB
Ref good
S1
FB
Burst mode
detection latch
VCS_BLx
VFB _E BL x
Selection
Logic
Compare
logic
VREF_B
RSel
S
Control unit
Datasheet
12 of 54
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Functional Description
Figure 9
3.5.1
Burst mode detect and adjust
Entering Active Burst Mode Operation
For determination of entering Active Burst Mode operation, three conditions apply:
the feedback voltage is lower than the threshold of VFB_EBLX
the up/down counter is 8 for low line or 10 for high line and
the above two conditions remain after a certain blanking time tFB_BEB (20 ms).
Once all of these conditions are fulfilled, the Active Burst Mode flip-flop is set and the controller enters Active
Burst Mode operation. This multi-condition determination for entering Active Burst Mode operation prevents
mis-triggering of entering Active Burst Mode operation, so that the controller enters Active Burst Mode
operation only when the output power is really low during the preset blanking time.
3.5.2
During Active Burst Mode Operation
After entering the Active Burst Mode the feedback voltage rises as VO starts to decrease due to the inactive PWM
section. One comparator observes the feedback signal if the voltage level VFB_BOn is exceeded. In that case the
internal circuit is power up to restrart with switching.
Turn-on of the power MOSFET is triggered by ZC counter with a fixed value of 8 ZC for low line and 10 ZC for
high line. Turn-off is resulted if the voltage across the shunt resistor at CS pin hits the threshold VCS_BLX.
If the output load is still low, the feedback signal decreases as the PWM section is operating. When feedback
signal reaches the low threshold VFB_BOff , the internal circuit is reset again and the PWM section is disabled until
next time VFB signal increases beyond the VFB_BOn threshold. In Active Burst Mode, the feedback signal is changing
like a saw tooth between VFB_BOff and VFB_BOn (see Figure 10).
3.5.3
Leaving Active Burst Mode Operation
The feedback voltage immediately increases if there is a high load jump. This is observed by a comparator with
threshold of VFB_LB. As the current limit is VCS_BLX (31% or 35%) during Active Burst Mode, a certain load is needed
so that feedback voltage can exceed VFB_LB. After leaving active burst mode, normal peak current control
through VFB is re-activated. In addition, the up/down counter will be set to 1 (low line) or 3 (high line)
immediately after leaving Active Burst Mode. This is helpful to minimize the output voltage undershoot.
Datasheet
13 of 54
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Functional Description
VFB
Entering Active
Burst Mode
VFB_LB
VFB_BOn
VFB_BOff
Leaving Active
Burst Mode
VFB_EBx
Time to 8th/10th ZC and
Blanking time (tFB_BEB)
VCS
VCS_N
t
Current limit level during
Active Burst Mode
VCS_BLx
VVCC
t
VVCC_OFF
VO
t
Max. Ripple < 1%
t
Figure 10
3.6
Signals in Active Burst Mode
Protection Functions
The ICE5QRxxxxAx provides numerous protection functions which considerably improve the power supply
system robustness, safety and reliability. The following table summarizes these protection functions. There are
3 different kinds of protection mode; non switch auto restart, auto restart and odd skip auto restart. The details
can refer to the Figure 11, Figure 12 and Figure 13.
Table 5
Protection functions
Protection Functions
Normal Mode
Burst Mode
Line Over Voltage
√
Burst ON
√
Brownout
√
√
Datasheet
14 of 54
Protection Mode
Burst OFF
√
Non switch Auto Restart
√
Non switch Auto Restart
V 2.2
2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Functional Description
Protection Functions
Normal Mode
Burst Mode
Protection Mode
Burst ON
Burst OFF
VCC Over Voltage
√
√
NA1
VCC Under Voltage
√
√
√
Over Load
√
NA1
NA1
Odd skip Auto Restart
Output Over Voltage
√
√
NA1
Odd skip Auto Restart
Over Temperature
√
√
√
3.6.1
Odd skip Auto Restart
Auto Restart
Non switch Auto Restart
Line Over Voltage
The AC Line Over Voltage Protection is detected by sensing bus capacitor voltage through VIN pin via 2 potential
divider resistors, Rl1 and Rl2 (see Figure 1). Once VVIN voltage is higher than the line over voltage threshold VVIN_LOVP, the
controller enters Line Over Voltage Protection and it releases the protection mode after VVIN is lower than VVIN_LOVP.
3.6.2
Brownout
The Brownout protection is observed by VIN pin similar to line over voltage Protection method with a different
voltage threshold level. When VVIN voltage is lower than the brownout threshold (VVIN_BO), the controller enters
Brownout Protection and it releases the protection mode after VVIN higher than brownin threshold (VVIN_BI).
3.6.3
VCC Ovder Voltage or Under Voltage
During operation, the VCC voltage is continuously monitored. In case of a VCC Over Voltage or Under Voltage,
the IC is reset and the main power switch is then kept off. After the VCC voltage falls below the threshold VVCC_OFF,
the new start up sequence is activated. The VCC capacitor is then charged up. Once the voltage exceeds the
threshold VVCC_ON, the IC begins to operate with a new soft-start.
3.6.4
Over Load
In case of open control loop or output Over Load, the feedback voltage will be pulled up and exceed VFB_OLP.
After a blanking time of tFB_OLP_B, the IC enters auto restart mode. The blanking time here enables the converter
to operate for a certain time during a sudden load jump.
3.6.5
Output Over Voltage
During off-time of the power MOSFET, the voltage at the ZCD pin is monitored for Output Over Voltage
detection. If the voltage is higher than the preset threshold VZCD_OVP for 10 consecutive pulses, the IC enters
Output Over Voltage Protection.
3.6.6
Over Temperature
If the junction temperature of controller chip exceeds Tjcon_OTP, the IC enters into Over Temperature protection
(OTP) auto restart mode. The controller implements with a 40 °C hysteresis. In another word, the controller/IC can
only resume from OTP if its junction temperature drops 40 °C from OTP trigger point. Please be noted that the
separated CoolMOSTM chip may have different temperature (mostly higher) from the controller chip.
Not Applicable
Datasheet
1
15 of 54
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Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Functional Description
Fault
detected
Fault released
Start up and detect at
every charging cycle
VVCC
Switching start at the
following restartt cycle
VCC_ON
VCC_OFF
VCS
t
No switching
t
Figure 11
Non switch Auto Restart Mode
Fault
detected
Fault released
Start up and detect at every
charging cycle
VVCC
Switching start at the
t cycle
following restart
VCC_ON
VCC_OFF
VCS
t
t
Figure 12
Datasheet
Auto Restart Mode
16 of 54
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Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Functional Description
Fault
detected
Fault released
Start up and detect at
every even charging
cycle
VVCC
No detect
No detect
Switching start at the
following event restart
cycle
VCC_ON
VCC_OFF
VCS
t
t
Figure 13
Datasheet
Odd skip Auto Restart Mode
17 of 54
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Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4
Electrical Characteristics
Attention: All voltages are measured with respect to ground (Pin 8 for DIP-7 and Pin12 for DSO-12). The voltage
levels are valid if other ratings are not violated.
4.1
Absolute Maximum Ratings
Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure
to absolute maximum rating conditions for extended periods may affect device reliability. Maximum
ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the
integrated circuit. System design needs to ensure not to exceed the maximum limit. Ta=25°C unless
otherwise specified.
Table 6
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Min.
Max.
Unit
Note / Test Condition
Drain Source Voltage (CoolMOS )
ICE5QRxx70Ax
VDS
-
700
V
Tj = 25 °C
Drain Source Voltage (CoolMOSTM)
ICE5QRxx80Ax
VDS
-
800
V
Tj = 25 °C
Pulse drain current
ICE5QR4770AZ1
ICE5QR4780AZ1
ICE5QR2270AZ2
ICE5QR2280AZ2
ICE5QR1070AZ2
ICE5QR0680AZ2
ICE5QR4770AG1
ICE5QR1680AG2
ICE5QR0680AG2
ID_Pulse
Avalanche energy, repetitive,
tAR limited by max. TJ=150°C with
TJ,Start=25°C
ICE5QR4770AZ
ICE5QR4780AZ
ICE5QR2270AZ
ICE5QR2280AZ
ICE5QR1070AZ
ICE5QR0680AZ
ICE5QR4770AG
ICE5QR1680AG
EAR
TM
Pulse width tP limited by Tj,Max
Pulse width tP=20 µs and limited by Tj,Max
Datasheet
A
-
2.2
2.6
5.8
5.8
5.8
5.8
2.2
5.8
5.8
mJ
-
0.02
0.02
0.07
0.05
0.06
0.22
0.02
0.07
ID=0.14 A, VDD=50 V
ID=0.2 A, VDD=50 V
ID=0.4 A, VDD=50 V
ID=0.4 A, VDD=50 V
ID=0.38 A, VDD=50 V
ID=1.8 A, VDD=50 V
ID=0.14 A, VDD=50 V
ID=0.6 A, VDD=50 V
1
2
18 of 54
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Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
ICE5QR0680AG
-
Avalanche current, repetitive,
tAR limited by max. TJ=150°C with
TJ,Start=25°C
ICE5QR4770AZ
ICE5QR4780AZ
ICE5QR2270AZ
ICE5QR2280AZ
ICE5QR1070AZ
ICE5QR0680AZ
ICE5QR4770AG
ICE5QR1680AG
ICE5QR0680AG
IAR
VCC Supply Voltage
0.22
ID=1.8 A, VDD=50 V
A
-
0.14
0.2
0.4
0.4
0.82
1.8
0.14
0.6
1.8
VCC
-0.3
27.0
V
FB Voltage
VFB
-0.3
3.6
V
ZCD Voltage
VZCD
-0.3
27
V
CS Voltage
VCS
-0.3
3.6
V
VIN Voltage
VIN
-0.3
3.6
V
-10.0
10.0
mA
Maximum DC current on any pin
except DRAIN & CS pins
ESD robustness HBM
VESD_HBM
-
2000
V
ESD robustness CDM
VESD_CDM
-
500
V
According to
EIA/JESD22
Junction temperature range
TJ
-40
150
°C
Controller & CoolMOS
Storage Temperature
TSTORE
-55
150
°C
Thermal Resistance (JunctionAmbient)
ICE5QR4770AZ
ICE5QR4780AZ
ICE5QR2270AZ
ICE5QR2280AZ
ICE5QR1070AZ
ICE5QR0680AZ
ICE5QR4770AG
ICE5QR1680AG
ICE5QR0680AG
RthJA
Datasheet
K/W
-
106
107
103
104
100
100
104
95
94
19 of 54
Setup according to the
JESD51 standard and
using minimum drain
pin copper area in a 2
oz copper single sided
PCB
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.2
Operating Range
Note : Within the operating range the IC operates as described in the functional description.
Table 7
Operating Range
Parameter
Symbol
VCC Supply Voltage
VVCC
Limit Values
Unit
Min.
Max.
VVCC_OFF
VVCC_OVP
Junction Temperature of controller
TjCon_op
-40
TjCon_OTP
˚C
Junction Temperature of CoolMOS
TjCoolMOS_op
-40
150
˚C
4.3
Remark
Max value limited due
to OTP of controller
chip
Operating Conditions
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from – 40 °C to 125 °C. Typical values represent the median values, which are related to 25°C.
If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Table 8
Operating Conditions
Parameter
Symbol
Limit Values
Unit
Note / Test Condition
Min.
Typ.
Max.
IVCC_Charge1
-0.35
-0.2
-0.09
mA
VVCC=0V, RStartUp=50MΩ
and VDRAIN=90V
IVCC_Charge2
-
-3.2
-
mA
VVCC=3V, RStartUp=50MΩ
and VDRAIN=90V
IVCC_Charge3
-5
-3
-1
mA
VVCC=15V, RStartUp=50MΩ
and VDRAIN=90V
Current Consumption, Startup
Current
IVCC_Startup
-
0.19
-
mA
Current Consumption, Normal
IVCC_Normal
-
0.9
-
mA
Current Consumption, Auto Restart
IVCC_AR
-
320
-
µA
Current Consumption, Burst Mode
IVCC_Burst Mode
-
0.5
-
mA
VCC Turn-on Threshold Voltage
VVCC_ON
15.3
16
16.5
V
VCC Turn-off Threshold Voltage
VVCC_OFF
9.5
10
10.5
V
VCC Short Circuit Protection
VVCC_SCP
-
1.1
1.9
V
VCC Turn-off blanking
tVCC_OFF_B
-
50
-
µs
VCC Charge Current
Datasheet
20 of 54
VVCC=15V
IFB=0A (No gate
switching)
VFB=1.8V
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.4
Internal Voltage Reference
Table 9
Internal Voltage Reference
Parameter
Internal Reference Voltage
4.5
PWM Section
Table 10
PWM Section
Parameter
Symbol
Limit Values
VREF
Min.
3.2
Symbol
Limit Values
Typ.
3.3
Unit
Max.
3.39
V
Unit
Min.
Typ.
Max.
Feedback Pull-Up Resistor
RFB
11
15
20
kΩ
PWM-OP Gain
GPWM
1.95
2.05
2.15
-
Offset for Voltage Ramp
VPWM
0.42
0.5
0.58
V
Maximum on time in normal operation tOnMax
20
35
60
µs
Maximum off time in normal operation
tOffMax
24
42.5
71
µs
Symbol
Limit Values
Peak current limitation in normal
operation
VCS_N
Min.
0.94
Typ.
1.00
Max.
1.06
V
Leading Edge Blanking time
tCS_LEB
118
220
462
ns
Peak Current Limitation in Active
Burst Mode – Level 1
VCS_BL1
0.26
0.31
0.36
V
Peak Current Limitation in Active
Burst Mode – Level 2
VCS_BL2
0.3
0.35
0.4
V
VCS_STG
0.06
0.10
0.15
V
PCS_STG
-
3
-
cycle
2.3
5
-
µs
4.6
Current Sense
Table 11
Current Sense
Parameter
Abnormal CS voltage threshold
Abnormal CS voltage Consecutive
Trigger
Abnormal CS voltage Sample period tCS_STG_SAM
Datasheet
21 of 54
Unit
Note / Test Condition
Measured at pin FB
IFB=0
Note / Test Condition
Note / Test Condition
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.7
Soft Start
Table 12
Soft Start
Parameter
Symbol
Soft-Start time
Soft-start time step
Internal regulation voltage at first
step
Internal regulation voltage step at
soft start
Unit
Note / Test Condition
Min.
Typ.
Max.
tSS
tSS_S1
8.5
-
12
ms
3
-
VSS11
-
0.30
-
V
CS peak voltage
VSS_S1
-
0.15
-
V
CS peak voltage
4.8
Digital Zero Crossing
Table 13
Digital Zero Crossing
Parameter
Limit Values
Symbol
ms
Limit Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Zero crossing threshold voltage
Zero crossing Ringing suppression
threshold
Minimum ringing suppression time
VZCD_CT
VZCD_RS
60
-
100
0.45
150
-
mV
V
tZCD_RS1
1.5
2.5
4.1
µs
VZCD > VZCD,RS
Maximum ringing suppression time
tZCD_RS2
-
25.00
-
µs
VZCD < VZCD,RS
Threshold to reset Up/Down
Counter
Threshold for downward counting
VFB_R
-
2.80
-
V
VFB_HLC
-
2.05
-
V
Threshold for upward counting
VFB_LHC
-
1.55
-
V
Counter Time
tCOUNT
-
48
-
ms
ZCD resistance
RZCD
2.5
3.0
3.5
kΩ
VIN voltage threshold for line
selection
Blanking time for VIN voltage
threshold for line selection
VVIN_REF
1.48
1.52
1.58
V
tVIN_REF
-
16.00
-
ms
The parameter is not subjected to production test - verified by design/characterization
Datasheet
22 of 54
Internal resistor at
ZCD pin
1
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2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.9
Active Burst Mode
Table 14
Active Burst Mode
Parameter
Symbol
Limit Values
Unit
Min.
Typ.
Max.
Charging current to select burst
mode
Isel
2.1
3
3.9
µA
Burst mode selection reference
voltage
VREF_B
2.65
2.75
2.85
V
Feedback voltage for entering
Active Burst Mode for level 1
VFB_EBL1
0.86
0.90
0.94
V
Feedback voltage for entering
Active Burst Mode for level 2
VFB_EBL2
1.0
1.05
1.1
V
Blanking time for entering Active
Burst Mode
Feedback voltage for leaving Active
Burst Mode
Feedback voltage for burst-on
tFB_BEB
-
20
-
ms
VFB_LB
2.65
2.75
2.85
V
VFB_BOn
2.3
2.40
2.5
V
Feedback voltage for burst-off
VFB_BOff
1.9
2.00
2.1
V
4.10
Line Over Voltage Protection
Table 15
Line OVP
Parameter
Symbol
Line Over Voltage threshold
VVIN_LOVP
Limit Values
Min.
Typ.
2.8
2.9
Line Over Voltage Blanking
tVIN_LOVP_B
-
4.11
Brownout Protection
Table 16
Brownout Protection
Parameter
Symbol
250
Unit
Max.
3.0
V
-
µs
Limit Values
Unit
Min.
Typ.
Max.
BrownIn threshold
BrownIn Blanking
VVIN_BI
tVIN_BI_B
0.63
-
0.66
250
0.69
-
V
µs
BrownOut threshold
VVIN_BO
0.40
tVIN_BO_B
0.43
-
V
BrownOut Blanking
0.37
-
Datasheet
23 of 54
250
Note / Test Condition
Note / Test Condition
Note / Test Condition
µs
V 2.2
2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.12
VCC Over Voltage Protection
Table 17
Vcc Over Voltage Protection
Parameter
Symbol
Limit Values
VCC Over Voltage threshold
VVCC_OVP
Min.
24
Typ.
25.50
Max.
27
V
VCC Over Voltage blanking
tVCC_OVP_B
-
50.00
-
µs
4.13
Over Load Protection
Table 18
Overload Protection
Parameter
Symbol
Unit
Limit Values
Unit
Min.
Typ.
Max.
Over Load Detection threshold for
OLP protection at FB pin
VFB_OLP
2.65
2.75
2.85
V
Over Load Protection Blanking
Time
tFB_OLP_B
-
30
-
ms
4.14
Output Over Voltage Protection
Table 19
Output OVP
Parameter
Symbol
Limit Values
Unit
Min.
Typ.
Max.
Output Over Voltage threshold
VZCD_OVP
1.9
2.0
2.1
V
Output Over Voltage Blanking
Pulse
PZCD_OVP_B
-
10
-
pulse
4.15
Thermal Protection
Table 20
Thermal Protection
Parameter
Symbol
Limit Values
Unit
Min.
Typ.
Max.
Over temperature protection1
Tjcon_OTP
129
140
150
°C
Over temperature Hysteresis
Over temperature Blanking Time
TjHYS_OTP
tjcon_OTP_B
-
40
50
-
°C
µs
The parameter is not subjected to production test - verified by design/characterization
Datasheet
24 of 54
Note / Test Condition
Note / Test Condition
Note / Test Condition
Consecutive Pulse
Note / Test Condition
Junction temperature
of the controller chip
(not the CoolMOS™
chip)
1
V 2.2
2020-02-03
Quasi-Resonant 700 V/800 V CoolSET™ - in DIP-7 and DSO-12 Package
Electrical Characteristics
4.16
CoolMOS™ Section
Table 21
ICE5QRxxxxAx
Parameter
Symbol
Limit Values
Min.
Drain Source Breakdown Voltage
ICE5QRxx70Ax
ICE5QRxx80Ax
Typ.
Unit
Max.
V
V(BR)DSS
700
800
-
Note / Test Condition
Tj = 25°C
-
Drain to CS On-Resistance (inclusive RDSon
of low side MOSFET)
Ω
ICE5QR4770AZ
-
4.73
8.73
5.18
-
Tj = 25°C
Tj=125°C1, ID =0.4A
ICE5QR4780AZ
-
4.13
8.69
4.85
-
Tj = 25°C
Tj=125°C1, ID =0.4A
ICE5QR2270AZ
-
2.13
4.31
2.33
-
Tj = 25°C
Tj=125°C1, ID =1A
ICE5QR2280AZ
-
2.13
4.31
2.35
-
Tj = 25°C
Tj=125°C1, ID =1A
ICE5QR1070AZ
-
1.15
1.85
1.25
Tj = 25°C
Tj=125°C1, ID =1.1A
ICE5QR0680AZ
-
0.71
1.27
0.80
-
Tj = 25°C
Tj=125°C1, ID =2A
ICE5QR4770AG
-
4.73
8.73
5.18
-
Tj = 25°C
Tj=125°C1, ID =0.4A
ICE5QR1680AG
-
1.53
3.01
1.75
-
Tj = 25°C
Tj=125°C1, ID =1.4A
ICE5QR0680AG
-
0.71
1.27
0.80
-
Tj = 25°C
Tj=125°C1, ID =2A
Effective output capacitance, energy
related1
pF
Co(er)
ICE5QR4770AZ
-
3.4
-
VGS=0V,VDS=0~480V
ICE5QR4780AZ
-
3
-
VGS=0V,VDS=0~500V
ICE5QR2270AZ
-
10
-
VGS=0V,VDS=0~480V
ICE5QR2280AZ
-
7
-
VGS=0V,VDS=0~500V
ICE5QR1070AZ
-
13
-
VGS=0V,VDS=0~400V
ICE5QR0680AZ
-
24
-
VGS=0V,VDS=0~500V
ICE5QR4770AG
-
3.4
-
VGS=0V,VDS=0~480V
ICE5QR1680AG
-
8
-
VGS=0V,VDS=0~500V
ICE5QR0680AG
-
24
-
VGS=0V,VDS=0~500V
The parameter is not subjected to production test - verified by design/characterization
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Electrical Characteristics
Rise Time1
trise
-
30
-
ns
Fall Time2
tfall
-
30
-
ns
Measured in a Typical Flyback Converter Application
Datasheet
1
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CoolMOS™ Performance Characteristics
5
CoolMOS™ Performance Characteristics
Figure 14
Safe Operating Area (SOA) curve for ICE5QR4770AZ
Figure 15
Safe Operating Area (SOA) curve for ICE5QR4780AZ
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CoolMOS™ Performance Characteristics
Figure 16
Safe Operating Area (SOA) curve for ICE5QR2270AZ
Figure 17
Safe Operating Area (SOA) curve for ICE5QR2280AZ
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CoolMOS™ Performance Characteristics
Figure 18
Safe Operating Area (SOA) curve for ICE5QR1070AZ
Figure 19
Safe Operating Area (SOA) curve for ICE5QR0680AZ
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CoolMOS™ Performance Characteristics
Figure 20
Safe Operating Area (SOA) curve for ICE5QR4770AG
Figure 21
Safe Operating Area (SOA) curve for ICE5QR1680AG
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CoolMOS™ Performance Characteristics
Figure 22
Safe Operating Area (SOA) curve for ICE5QR0680AG
Figure 23
Power dissipation of ICE5QR4770AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
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CoolMOS™ Performance Characteristics
Figure 24
Power dissipation of ICE5QR4780AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
Figure 25
Power dissipation of ICE5QR2270AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
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CoolMOS™ Performance Characteristics
Figure 26
Power dissipation of ICE5QR2280AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
Figure 27
Power dissipation of ICE5QR1070AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
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CoolMOS™ Performance Characteristics
Figure 28
Power dissipation of ICE5QR0680AZ, DIP-7 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
Figure 29
Power dissipation of ICE5QR4770AG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
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CoolMOS™ Performance Characteristics
Figure 30
Power dissipation of ICE5QR1680AG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
Figure 31
Power dissipation of ICE5QR0680AG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in
section 4.1 must not be exceeded)
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CoolMOS™ Performance Characteristics
780
760
VBR(DSS) [V]
740
720
700
680
660
640
620
-75
-50
-25
0
25
50
75
100
125
150
175
TJ [°C]
Figure 32
Drain-source breakdown voltage ICE5QRxx70Ax; VBR(DSS)=f(TJ), ID=1 mA
Figure 33
Drain-source breakdown voltage ICE5QRxx80Ax; VBR(DSS)=f(TJ), ID=1 mA
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CoolMOS™ Performance Characteristics
Figure 34
Typical CoolMOS™ capacitances of ICE5QR4770Ax (C=f(VDS);VGS=0 V; f=1 MHz)
Figure 35
Typical CoolMOS™ capacitances of ICE5QR4780AZ (C=f(VDS);VGS=0 V; f=250 kHz)
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CoolMOS™ Performance Characteristics
Figure 36
Typical CoolMOS™ capacitances of ICE5QR2270AZ (C=f(VDS);VGS=0 V; f=1 MHz)
Figure 37
Typical CoolMOS™ capacitances of ICE5QR2280AZ (C=f(VDS);VGS=0 V; f=250 kHz)
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CoolMOS™ Performance Characteristics
Figure 38
Typical CoolMOS™ capacitances of ICE5QR1070AZ (C=f(VDS);VGS=0 V; f=250 kHz)
Figure 39
Typical CoolMOS™ capacitances of ICE5QR0680Ax (C=f(VDS);VGS=0 V; f=250 kHz)
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CoolMOS™ Performance Characteristics
Figure 40
Datasheet
Typical CoolMOS™ capacitances of ICE5QR1680AG(C=f(VDS);VGS=0 V; f=250 kHz)
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Output Power Curve
6
Output Power Curve
The calculated output power curves giving the typical output power versus ambient temperature are shown
below. The curves are derived based on a typical discontinuous mode flyback in an open frame design at
Ta=50°C, TJ=125°C (integrated high voltage MOSFET), using minimum drain pin copper area in a 2 oz copper
single sided PCB and steady state operation only (no design margins for abnormal operation modes are
included). The output power figure is for selection purpose only. The actual power can vary depending on
particular designs. In a power supply system, appropriate thermal design margins must be applied to make
sure that the maximum ratings given in section 4.1 are respected at all times.
Figure 41
Output power curve of ICE5QR4770AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 42
Output power curve of ICE5QR4770AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 43
Output power curve of ICE5QR4780AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 44
Output power curve of ICE5QR4780AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 45
Output power curve of ICE5QR2270AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 46
Output power curve of ICE5QR2270AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 47
Output power curve of ICE5QR2280AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 48
Output power curve of ICE5QR2280AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 49
Output power curve of ICE5QR1070AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 50
Output power curve of ICE5QR1070AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 51
Output power curve of ICE5QR0680AZ, VIN=85~300 VAC; POut=f(Ta)
Figure 52
Output power curve of ICE5QR0680AZ, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 53
Output power curve of ICE5QR4770AG, VIN=85~300 VAC; POut=f(Ta)
Figure 54
Output power curve of ICE5QR4770AG, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 55
Output power curve of ICE5QR1680AG, VIN=85~300 VAC; POut=f(Ta)
Figure 56
Output power curve of ICE5QR1680AG, VIN=220 VAC; POut=f(Ta)
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Output Power Curve
Figure 57
Output power curve of ICE5QR0680AG, VIN=85~300 VAC; POut=f(Ta)
Figure 58
Output power curve of ICE5QR0680AG, VIN=220 VAC; POut=f(Ta)
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Outline Dimension
7
Figure 59
Datasheet
Outline Dimension
PG-DIP-7
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Outline Dimension
Figure 60
Datasheet
PG-DSO-12
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Marking
8
Marking
Figure 61
Marking of DIP-7
Figure 62
Marking of DSO-12
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Revision history
Revision history
Document
version
Date of release
Description of changes
V2.0
4 Jul 2017
Page 2, 17, 18, 24~44
Addition of ICE5QR1070AZ
Page 35
Update of 700V CoolSET™ Drain-source breakdown voltage as
shown in Figure 32 reference to errata sheet #10157AERRA
V2.1
11 Aug 2017
Page 8 ~14
Text content revised
Page 17, 18 and 19 (reference to errata sheet 10160AERRA)
Table 6, the limit values for VDS shall be at the maximum column
Table 8, the polarity for maximum limit on IVCC_Charge1 shall be negative
Additional text content revised
V 2.2
3 Feb 2020
Update of CS pin function and description
(refer to errata sheet ES_2001_PL83_2002_024629)
Datasheet
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Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2020-02-03
Published by
Infineon Technologies AG
81726 München, Germany
© 2020 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
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