ICE5QR4780BGXUMA1

ICE5QRxx80BG Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Product Highlights          Integrated 800 V avalanche rugged CoolMOS™ Novel Quasi-Resonant operation and proprietary implementation for low EMI Enhanced Active Burst Mode with selectable entry and exit standby power PG-DSO-12 Active Burst Mode to reach the lowest standby power VREF_B VCS_BL1 = 0.31 V 0.90 V 2.75 V 2 VFB < VREF_B VCS_BL2 = 0.35 V 1.05 V 2.75 V During IC first startup, the internal RefGOOD signal is logic low when VCC < 4 V. It will reset the Burst Mode level Detection latch. When the Burst Mode Level Detection latch is low and IC is in OFF state, the IC internal RFB resistor is disconnected from the FB pin and a current source Isel is turned on instead. From VCC=4 V to VCC on threshold, the FB pin will start to charge to a voltage level associated with RSel resistor. When VCC reaches VCC on threshold, the FB voltage is sensed. The burst mode thresholds are then chosen according to the FB voltage level. The Burst Mode Level Detection latch is then set to high. Once the detection latch is set high, any change of the FB level will not change the threshold selection. The current source Isel is turned off in 2 μs after VCC reaches VCC on threshold and the RFB resistor is re-connected to FB pin (see Figure 9). Datasheet 12 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Functional Description Vdd Isel S2 UVLO 2μs delay R RFB Ref good S1 FB Burst mode detection latch VCS_BLx VFB _E BL x Selection Logic Compare logic VREF_B RSel S Control unit Figure 9 Burst mode detect and adjust 3.5.1 Entering Active Burst Mode Operation For determination of entering Active Burst Mode operation, three conditions apply:  the feedback voltage is lower than the threshold of VFB_EBLX  the up/down counter is 8 for low line or 10 for high line and  the above two conditions remain after a certain blanking time tFB_BEB (20 ms) Once all of these conditions are fulfilled, the Active Burst Mode flip-flop is set and the controller enters Active Burst Mode operation. This multi-condition determination for entering Active Burst Mode operation prevents mis-triggering of entering Active Burst Mode operation, so that the controller enters Active Burst Mode operation only when the output power is really low during the preset blanking time. 3.5.2 During Active Burst Mode Operation After entering the Active Burst Mode the feedback voltage rises as VO starts to decrease due to the inactive PWM section. One comparator observes the feedback signal if the voltage level VFB_BOn is exceeded. In that case the internal circuit is power up to restrart with switching. Turn-on of the power MOSFET is triggered by ZC counter with a fixed value of 8 ZC for low line and 10 ZC for high line. Turn-off is resulted if the voltage across the shunt resistor at CS pin hits the threshold VCS_BLX. If the output load is still low, the feedback signal decreases as the PWM section is operating. When feedback signal reaches the low threshold VFB_BOff , the internal circuit is reset again and the PWM section is disabled until next time VFB signal increases beyond the VFB_BOn threshold. In Active Burst Mode, the feedback signal is changing like a saw tooth between VFB_BOff and VFB_BOn (see Figure 10). 3.5.3 Leaving Active Burst Mode Operation The feedback voltage immediately increases if there is a high load jump. This is observed by a comparator with threshold of VFB_LB. As the current limit is VCS_BLX (31% or 35%) during Active Burst Mode, a certain load is needed so that feedback voltage can exceed VFB_LB. After leaving Active Burst Mode, Gate will only turn on if zero crossing is detected (VZCD VZCD,RS Maximum ringing suppression time tZCD_RS2 - 25.00 - µs VZCD < VZCD,RS Threshold to reset Up/Down Counter Threshold for downward counting VFB_R - 2.80 - V VFB_HLC - 2.05 - V Threshold for upward counting VFB_LHC - 1.55 - V Counter Time tCOUNT - 48 - ms ZCD resistance RZCD 2.5 3.0 3.5 kΩ VIN voltage threshold for line selection Blanking time for VIN voltage threshold for line selection VVIN_REF 1.48 1.52 1.58 V tVIN_REF - 16.00 - ms The parameter is not subjected to production test - verified by design/characterization Datasheet 21 of 39 Internal resistor at ZCD pin 1 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Electrical Characteristics 4.9 Active Burst Mode Table 14 Active Burst Mode Parameter Symbol Limit Values Unit Min. Typ. Max. Charging current to select burst mode Isel 2.1 3 3.9 µA Burst mode selection reference voltage VREF_B 2.65 2.75 2.85 V Feedback voltage for entering Active Burst Mode for level 1 VFB_EBL1 0.86 0.90 0.94 V Feedback voltage for entering Active Burst Mode for level 2 VFB_EBL2 1.0 1.05 1.1 V Blanking time for entering Active Burst Mode Feedback voltage for leaving Active Burst Mode ZCD voltage threshold for first pulse after leaving Active Burst Mode Feedback voltage for burst-on tFB_BEB - 20 - ms VFB_LB 2.65 2.75 2.85 V VZCD_LB 60 100 150 mV VFB_BOn 2.3 2.40 2.5 V Feedback voltage for burst-off VFB_BOff 1.9 2.00 2.1 V 4.10 Line Over Voltage Protection Table 15 Line OVP Parameter Symbol Line Over Voltage threshold VVIN_LOVP Limit Values Min. Typ. 2.8 2.9 Line Over Voltage Blanking tVIN_LOVP_B - 4.11 Brownout Protection Table 16 Brownout Protection Parameter 250 Unit Max. 3.0 V - µs Symbol Limit Values BrownIn threshold BrownIn Blanking BrownOut threshold VVIN_BI tVIN_BI_B VVIN_BO Min. 0.63 0.37 Typ. 0.66 250 0.40 Max. 0.69 0.43 V µs V BrownOut Blanking tVIN_BO_B - 250 - µs 4.12 VCC Over Voltage Protection Table 17 VCC Over Voltage Protection Datasheet 22 of 39 Unit Note / Test Condition Note / Test Condition Note / Test Condition V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Electrical Characteristics Parameter Symbol Limit Values VCC Over Voltage threshold VVCC_OVP Min. 24 Typ. 25.50 Max. 27 V VCC Over Voltage blanking tVCC_OVP_B - 50.00 - µs 4.13 Over Load Protection Table 18 Overload Protection Parameter Unit Symbol Limit Values Over Load Detection threshold for OLP protection at FB pin VFB_OLP Min. 2.65 Typ. 2.75 Max. 2.85 V Over Load Protection Blanking Time tFB_OLP_B - 30 - ms 4.14 Output Over Voltage Protection Table 19 Output OVP Parameter Symbol Unit Limit Values Unit Min. Typ. Max. Output Over Voltage threshold VZCD_OVP 1.9 2.0 2.1 V Output Over Voltage Blanking Pulse PZCD_OVP_B - 10 - pulse 4.15 Thermal Protection Table 20 Thermal Protection Parameter Symbol Limit Values Unit Min. Typ. Max. Over temperature protection1 Tjcon_OTP 129 140 150 °C Over temperature Hysteresis TjHYS_OTP - 40 - °C Over temperature Blanking Time tjcon_OTP_B - 50 - µs The parameter is not subjected to production test - verified by design/characterization Datasheet 23 of 39 Note / Test Condition Note / Test Condition Note / Test Condition Consecutive Pulse Note / Test Condition Junction temperature of the controller chip (not the CoolMOS™ chip) 1 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Electrical Characteristics 4.16 CoolMOS™ Section Table 21 ICE5QRxx80BG Parameter Symbol Limit Values Min. Drain Source Breakdown Voltage ICE5QRxx80BG Drain to CS On-Resistance (inclusive RDSon of low side MOSFET) ICE5QR4780BG Typ. Unit Max. V V(BR)DSS ICE5QR2280BG ICE5QR1680BG ICE5QR0680BG Effective output capacitance, energy related1 ICE5QR4780BG ICE5QR2280BG ICE5QR1680BG ICE5QR0680BG Co(er) Rise Time2 Fall Time2 800 - Note / Test Condition Tj = 25°C Ω - 4.13 8.691 2.13 4.311 1.53 3.011 0.71 1.271 4.85 2.35 1.75 0.80 - Tj = 25°C Tj=125°C, ID =0.4A Tj = 25°C Tj=125°C, ID =1A Tj = 25°C Tj=125°C, ID =1.4A Tj = 25°C Tj=125°C, ID =2A pF - 3 7 8 24 - trise - 30 - ns tfall - 30 - ns The parameter is not subjected to production test - verified by design/characterization Measured in a Typical Flyback Converter Application Datasheet 24 of 39 VGS=0V, VDS=0~500V 1 2 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics 5 CoolMOS™ Performance Characteristics Figure 14 Safe Operating Area (SOA) curve for ICE5QR4780BG Figure 15 Safe Operating Area (SOA) curve for ICE5QR2280BG Datasheet 25 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 16 Safe Operating Area (SOA) curve for ICE5QR1680BG Figure 17 Safe Operating Area (SOA) curve for ICE5QR0680BG Datasheet 26 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 18 Power dissipation of ICE5QR4780BG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must not be exceeded) Figure 19 Power dissipation of ICE5QR2280BG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must not be exceeded) Datasheet 27 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 20 Power dissipation of ICE5QR1680BG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must not be exceeded) Figure 21 Power dissipation of ICE5QR0680BG, DSO-12 package; Ptot=f(Ta), (Maximum ratings as given in section 4.1 must not be exceeded) Datasheet 28 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 22 Drain-source breakdown voltage ICE5QRxx80BG; VBR(DSS)=f(TJ), ID=1 mA Figure 23 Typical CoolMOS™ capacitances of ICE5QR4780BG (C=f(VDS);VGS=0 V; f=250 kHz) Datasheet 29 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 24 Typical CoolMOS™ capacitances of ICE5QR2280BG (C=f(VDS);VGS=0 V; f=250 kHz) Figure 25 Typical CoolMOS™ capacitances of ICE5QR1680BG (C=f(VDS);VGS=0 V; f=250 kHz) Datasheet 30 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package CoolMOS™ Performance Characteristics Figure 26 Datasheet Typical CoolMOS™ capacitances of ICE5QR0680BG (C=f(VDS);VGS=0 V; f=250 kHz) 31 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Output Power Curve 6 Output Power Curve The calculated output power curves giving the typical output power versus ambient temperature are shown below. The curves are derived based on a typical discontinuous mode flyback in an open frame design at Ta=50°C, TJ=125°C (integrated high voltage MOSFET), using minimum drain pin copper area in a 2 oz copper single sided PCB and steady state operation only (no design margins for abnormal operation modes are included). The output power figure is for selection purpose only. The actual power can vary depending on particular designs. In a power supply system, appropriate thermal design margins must be applied to make sure that the maximum ratings given in section 4.1 are respected at all times. Figure 27 Output power curve of ICE5QR4780BG, VIN=85~300 VAC; POut=f(Ta) Figure 28 Output power curve of ICE5QR4780BG, VIN=220 VAC; POut=f(Ta) Datasheet 32 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Output Power Curve Figure 29 Output power curve of ICE5QR2280BG, VIN=85~300 VAC; POut=f(Ta) Figure 30 Output power curve of ICE5QR2280BG, VIN=220 VAC; POut=f(Ta) Datasheet 33 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Output Power Curve Figure 31 Output power curve of ICE5QR1680BG, VIN=85~300 VAC; POut=f(Ta) Figure 32 Output power curve of ICE5QR1680BG, VIN=220 VAC; POut=f(Ta) Datasheet 34 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Output Power Curve Figure 33 Output power curve of ICE5QR0680BG, VIN=85~300 VAC; POut=f(Ta) Figure 34 Output power curve of ICE5QR0680BG, VIN=220 VAC; POut=f(Ta) Datasheet 35 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Outline Dimension 7 Outline Dimension Figure 35 PG-DSO-12 Datasheet 36 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Marking 8 Marking Figure 36 Marking of DSO-12 Datasheet 37 of 39 V 2.1 2020-01-21 Quasi-Resonant 800 V CoolSET™ - in DSO-12 Package Revision history Revision history Document version Date of release Description of changes V 2.0 30 Aug 2019 First release V 2.1 21 Jan 2020   Datasheet Change the name of datasheet from ICE5QR0680BG to ICE5QRxx80BG to include 3 new variants (ICE5QR4780BG, ICE5QR2280BG and ICE5QR1680BG) Update of CS pin function and description (refer to errata sheet ES_2001_PL83_2002_024629) 38 of 39 V 2.1 2020-01-21 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2020-01-21 Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. WARNINGS Due to technical requirements products may contain dangerous substances. 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