IDB18E120

IDB18E120 Fast Switching Emitter Controlled Diode Product Summary Feature VRRM • 1200 V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C PG-TO263-3-2 • Low forward voltage • Easy paralleling 2 1 * RoHS compliant 3 Type Package IDB18E120 PG-TO263-3-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D18E120 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 31 TC=90°C 19.8 Surge non repetitive forward current I FSM 78 I FRM 47 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 113 TC=90°C 54 Operating and storage temperature Soldering temperature Tj , Tstg TS -55...+150 260 °C °C reflow soldering, MSL1 Rev.2.3 Page 1 2013-07-02 IDB18E120 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 1400 Forward voltage drop VF V IF=18A, T j=25°C - 1.65 2.15 IF=18A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2013-07-02 IDB18E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 195 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 280 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 300 - Peak reverse current A I rrm V R=800V, IF = 18 A, di F/dt=800A/µs, T j=25°C - 20.2 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 24.4 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 25.3 - Reverse recovery charge nC Q rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 1880 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 3200 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 3540 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 5.5 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 6.6 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 6.7 - Reverse recovery softness factor Rev.2.3 S Page 3 2013-07-02 IDB18E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 35 120 W A 100 90 IF P tot 25 80 70 20 60 15 50 40 10 30 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 54 2.6 A V 36A -55°C 25°C 100°C 150°C 42 2.2 IF VF 36 2 30 18A 24 1.8 18 1.6 12 9A 1.4 6 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2.3 Page 4 -20 20 60 100 °C Tj 160 2013-07-02 IDB18E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 1000 4600 nC ns 36A 4200 4000 800 36A 18A 9A Q rr 3800 trr 700 3600 18A 3400 600 3200 500 3000 2800 400 2600 300 9A 2400 2200 200 2000 100 200 300 400 500 600 700 800 1800 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 30 18 36A 18A 9A 14 20 S Irr A 36A 18A 9A 12 10 15 8 6 10 4 5 200 Rev.2.3 300 400 500 600 700 800 2 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 di F/dt 2013-07-02 IDB18E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP18E120 K/W ZthJC 10 0 10 -1 10 -2 D = 0.50 0.20 10 -3 0.10 0.05 single pulse 0.02 10 -4 10 -5 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.3 Page 6 2013-07-02 IDB18E120 Rev.2.3 Page 7 2013-07-02 IDB18E120 Published by Infineon Technologies AG, 81726 München Published by © 2009 Infineon Technologies AG Infineon Technologies AG All Rights Reserved. 81726 Munich, Germany © 2013 Infineon Attention please! 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Warnings Infineon Technologies Components may only be used in life-support devices or systems with the express written approval ofrequirements, Infineon Technologies, if a failure of such components can reasonablyFor be information expected to on the types Due to technical components may contain dangerous substances. cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device in question, please contact the nearest Infineon Technologies Office. or system Life support devices or systems are intended to be implanted in the human body, or to support The Infineon Technologies component described in this Data Sheet may be used in life-support devices or and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health systems and/or automotive, aviation and aerospace applications or systems only with the express written of the user or other persons may be endangered. approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page 8 2013-07-02