IDB30E60
Fast Switching
Switching EmCon
Emitter Diode
Controlled Diode
Fast
Product Summary
VRRM
600
V
IF
30
A
Feature
VF
1.5
V
• 600
EmConControlled
technologytechnology
600VV Emitter
T jmax
175
°C
• Fast recovery
• Soft switching
2
• Low reverse recovery charge
1
• Low forward voltage
3
• 175°C operating temperature
PG-TO263-3
• Easy paralleling
* RoHS compliant
Type
Package
IDB30E60
PG-TO263-3
Ordering Code
-
Marking
Pin 1
PIN 2
PIN 3
D30E60
NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Parameter
Symbol
Symbol
Repetitive
peak
reverse
voltage
Repetitive
peak
reverse
voltage
VRRM
VRRM
Continousforward
forward
current
Continuous
current
TTCC==25°C
25C
TTC ==90°C
90C
IF
Value
Value
600
600
Unit
Unit
VV
A
A
IF
52.3
52.3
34.9
34.9
Surge non repetitive forward current
Surge non repetitive forward current
TC = 25C, tp = 10 ms, sine halfwave
I FSM
IFSM
117
117
A
Maximum repetitive forward current
repetitive forward current
TMaximum
C = 25C, tp limited by tj,max, D = 0.5
IFRM
I FRM
8181
A
TC=25°C, tp limited by Tjmax, D=0.5
Power
dissipation
dissipation
TPower
C = 25C
PtotP t o t
142.9
80.9
142.9
C
TC=25°C, tp=10 ms, sine halfwave
TTCC==25°C
90C
Tj
Operating
TC=90°C junction temperature
Tstg
Tj , T
stg
TS T
Storage
temperature
Operating
and storage temperature
Soldering
temperature
Soldering temperature
1.6mm
(0.063 in.)MSL1
from case for 10 s
reflow soldering,
Rev.2.4
S
Page 1
-40…+175
80.9
-55...+150
-55...+175
260
260
WW
°C°C
°C
2013-12-05
2009-03-04
IDB30E60
Thermal Characteristics
Symbol
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
1.05
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
@ min. footprint
-
-
62
@ 6 cm 2 cooling area 1)
-
35
-
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Reverse leakage current
IR
µA
V R=600V, Tj=25°C
-
-
50
V R=600V, Tj=150°C
-
-
2500
Forward voltage drop
VF
V
IF=30A, T j=25°C
-
1.5
2
IF=30A, T j=150°C
-
1.5
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev.2.4
Page 2
2009-03-04
2013-12-05
IDB30E60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Parameter
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Reverse recovery time
ns
t rr
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
-
126
-
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C
-
171
-
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C
-
178
-
Peak reverse current
A
I rrm
V R=400V, IF = 30A, diF/dt=1000A/µs, Tj =25°C
-
19
-
V R=400V, IF =30A, diF/dt=1000A/µs, T j=125°C
-
22
-
V R=400V, IF =30A, diF/dt=1000A/µs, T j=150°C
-
24
-
Reverse recovery charge
nC
Q rr
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
-
1100
-
V R=400V, IF =30A, diF/dt=1000A/µs, T j=125°C
-
1950
-
V R=400V, IF =30A, diF/dt=1000A/µs, T j=150°C
-
2150
-
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=25°C
-
4
-
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=125°C
-
4.6
-
V R=400V, IF=30A, diF/dt=1000A/µs, Tj=150°C
-
4.8
-
Reverse recovery softness factor
Rev.2.4
S
Page 3
2009-03-04
2013-12-05
IDB30E60
1 Power dissipation
2 Diode forward current
Ptot = f (TC)
IF = f(TC)
parameter: Tj ≤ 175 °C
parameter: Tj≤ 175°C
55
150
W
A
45
120
40
100
IF
P tot
110
90
35
80
30
70
25
60
20
50
40
15
30
10
20
5
10
0
25
50
75
100
125
0
25
175
°C
50
75
100
125
TC
175
°C
TC
3 Typ. diode forward current
4 Typ. diode forward voltage
IF = f (VF)
VF = f (Tj)
2
90
V
A
70
1.8
-55°C
25°C
100°C
150°C
1.7
VF
IF
60
60A
1.6
50
30A
1.5
40
1.4
30
1.3
15A
20
1.2
10
0
0
1.1
0.5
1
1.5
1
-60
2.5
V
VF
Rev.2.4
Page 4
-20
20
60
100
160
°C
Tj
2009-03-04
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IDB30E60
5 Typ. reverse recovery time
6 Typ. reverse recovery charge
trr = f (diF/dt)
Qrr =f(diF/dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125 °C
500
2600
ns
nC
60A
2200
60A
30A
15A
350
Q rr
trr
400
2000
300
1800
250
1600
200
1400
150
1200
100
200
300
400
500
600
700
800
1000
200
A/µs 1000
di F/dt
30A
15A
300
400
500
600
700
800
A/µs 1000
diF/dt
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
Irr = f (diF/dt)
S = f(diF /dt)
parameter: V R = 400V, T j = 125°C
parameter: VR = 400V, Tj = 125°C
26
12
A
22
18
60A
30A
15A
60A
30A
15A
9
S
Irr
20
10
8
16
7
14
6
12
5
10
4
8
6
200
Rev.2.4
300
400
500
600
700
800
3
200
A/µs 1000
di F/dt
Page 5
300
400
500
600
700
800
A/µs 1000
diF/dt
2013-12-05
2009-03-04
IDB30E60
9 Max. transient thermal impedance
ZthJC = f (tp)
parameter : D = t p/T
10 1
IDP30E60
K/W
ZthJC
10 0
10 -1
D = 0.50
10 -2
0.20
0.10
0.05
0.02
10 -3
single pulse
10 -4 -7
10
10
-6
10
-5
0.01
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.4
Page 6
2013-12-05
2009-03-04
IDB30E60
Rev.2.4
Page 7
2013-12-05
2007-09-01
IDB30E60
Published by
Infineon Technologies AG,
81726 München
© 2009 Infineon Technologies AG
All Rights Reserved.
Published
by
Infineon Technologies AG
Attention please!
81726 Munich, Germany
The information herein is given to describe certain components and shall not be considered as warranted
©
2013 Infineon Technologies AG
characteristics.
All Rights Reserved.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
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The information given in this document shall in no event be regarded as a guarantee of conditions or
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information
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For further information
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For information on the types in question please contact your nearest Infineon Technologies Office.
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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The
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failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
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Rev.2.4
Page 8
2009-03-04
2013-12-05