IDB45E60

IDB45E60 Fast Switching Switching EmCon Emitter Diode Controlled Diode Fast Product Summary Feature VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600 EmConControlled technologytechnology 600VV Emitter • Fast recovery 2 • Soft switching • Low reverse recovery charge 1 • Low forward voltage 3 • 175°C operating temperature PG-TO263-3 • Easy paralleling * RoHS compliant Type IDB45E60 Package PG-TO263-3 Ordering Code Marking Pin 1 PIN 2 PIN 3 - D45E60 NC C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF Value Value 600 600 Unit Unit VV A A IF 7171 4747 Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 162 162 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 111.5 111.5 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation dissipation TPower C = 25C PtotP t o t 187 106 187 C TC=25°C, tp=10 ms, sine halfwave TTCC==25°C 90C Tj Operating TC=90°C junction temperature Tstg Tj , T stg TS T Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 in.)MSL1 from case for 10 s reflow soldering, Rev.2.4 S Page 1 WW -40…+175 106 -55...+150 -55...+175 260 260 °C°C °C 2013-12-05 2009-03-04 IDB45E60 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 3000 Forward voltage drop VF V IF=45A, T j=25°C - 1.5 2 IF=45A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.4 Page 2 2013-12-05 2009-03-04 IDB45E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C - 140 - V R=400V, IF=45A, diF/dt=1000A/µs, Tj=125°C - 185 - V R=400V, IF=45A, diF/dt=1000A/µs, Tj=150°C - 195 - Peak reverse current A I rrm V R=400V, IF = 45A, diF/dt=1000A/µs, Tj =25°C - 23 - V R=400V, IF =45A, diF/dt=1000A/µs, T j=125°C - 28.1 - V R=400V, IF =45A, diF/dt=1000A/µs, T j=150°C - 29 - Reverse recovery charge nC Q rr V R=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C - 1400 - V R=400V, IF =45A, diF/dt=1000A/µs, T j=125°C - 2650 - V R=400V, IF =45A, diF/dt=1000A/µs, T j=150°C - 2900 - V R=400V, IF=45A, diF/dt=1000A/µs, Tj=25°C - 3.1 - V R=400V, IF=45A, diF/dt=1000A/µs, Tj=125°C - 4.2 - V R=400V, IF=45A, diF/dt=1000A/µs, Tj=150°C - 4.4 - Reverse recovery softness factor Rev.2.4 S Page 3 2013-12-05 2009-03-04 IDB45E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 195 80 W A 165 60 135 IF P tot 150 120 50 105 40 90 75 30 60 20 45 30 10 15 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 140 2.4 A V -55°C 25°C 100°C 150°C 2 90A IF VF 100 80 1.8 60 1.6 45A 40 1.4 22,5A 20 0 0 1.2 0.5 1 1.5 1 -60 2.5 V VF Rev.2.4 Page 4 -20 20 60 100 160 °C Tj 2013-12-05 2009-03-04 IDB45E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 450 4000 ns nC 90A 90A 45A 22.5A trr Q rr 350 3000 300 45A 2500 250 2000 22,5A 200 1500 150 100 200 300 400 500 600 700 800 1000 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 8 35 A 7 90A 45A 22.5A 25 6.5 S Irr 90A 6 5.5 20 45A 5 22,5A 15 4.5 4 10 3.5 5 200 Rev.2.4 300 400 500 600 700 800 3 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2013-12-05 2009-03-04 IDB45E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP45E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.4 Page 6 2013-12-05 2009-03-04 IDB45E60 Rev.2.4 Page 7 2009-03-04 2013-12-05 IDB45E60 Published by Infineon Technologies AG, 81726 München © 2009 Infineon Technologies AG All Rights Reserved. Published by Infineon Technologies AG Attention please! 81726 Munich, Germany The information herein is given to describe certain components and shall not be considered as warranted © 2013 Infineon Technologies AG characteristics. All Rights Reserved. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or Infineon Technologies is an approved CECC manufacturer. characteristics. 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Infineon Technologies Components may only be used in life-support devices or systems with the express Warnings written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or information to support on the types Due to technical requirements, components may contain dangerous substances. For and/or maintain and sustain and/or protect human life.Technologies If they fail, it Office. is reasonable to assume that the health in question, please contact the nearest Infineon of theInfineon user or other persons may be endangered. The Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.4 Page 8 2013-12-05 2009-03-04