IDD04S60C

IDD04S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features VDC 600 • Switching behavior benchmark Qc 8 nC • No reverse recovery/ No forward recovery IF 4 A • Revolutionary semiconductor material - Silicon Carbide V • No temperature influence on the switching behavior PG-TO252 • High surge current capability • Pb-free lead plating; RoHS compliant 3 • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) 1 2 • Optimized for high temperature operation thinQ! 2G Diode specially designed for fast switching applications like: • SMPS e.g.; CCM PFC; typ Pout= 400 - 800W • Motor Drives; Solar applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD04S60C PG-TO252 D04S60C n.c. A C Maximum ratings Parameter Symbol Conditions Continuous forward current IF RMS forward current I F,RMS Surge non-repetitive forward current, I F,SM sine halfwave Value T C