IDD10SG60CXTMA1

IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C 10 A • Switching behavior benchmark • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Breakdown voltage tested at 20mA2) • Optimized for high temperature operation • Lowest Figure of Merit QC/IF thinQ! 3G Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 Pin 3 IDD10SG60C PG-TO252-3 D10G60C n.c. A C Maximum ratings Parameter Symbol Conditions Continuous forward current IF Value T C