IDFW60C65D1XKSA1

IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation RapidSwitchingEmitterControlledDiodeinfullyisolatedpackage  Features: A1 C1 C2 A2 A2 A1 •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Maximumjunctiontemperature175°C •2500VRMSelectricalisolation,50/60Hz,t=1min •100%testedisolatedmountingsurface •Pb-freeleadplating •RoHScompliant C PotentialApplications: •AirConditioning •GPD(GeneralPurposeDrives) •IndustrialSMPS Packagepindefinition: Fully isolated package TO-247 •Pin1-anode(A1) •Pin2-cathode(C) •Pin3-anode(A2) ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IDFW60C65D1 Datasheet www.infineon.com Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 2x 30A 1.45V 175°C C60ED1 PG-TO247-3-AI PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation MaximumRatings(perleg) Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax Th=25°C Th=65°C IF 56.0 43.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Diode surge non repetitive forward current Th=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTh=25°C PowerdissipationTh=65°C Ptot 100.0 73.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 240.0 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M IsolationvoltageRMS,f=50/60Hz,t=1min1) Visol 0.6 Nm 2500 V ThermalResistances(perleg) Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics Diode thermal resistance,2) junction - heatsink Rth(j-h) - 1.37 1.50 K/W Thermal resistance junction - ambient Rth(j-a) - - 65 K/W ElectricalCharacteristics(perleg),atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1.45 1.42 1.40 1.75 - - 1200 40 - Unit StaticCharacteristic Diode forward voltage VF IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current3) IR VR=650V Tvj=25°C Tvj=175°C 1) 2) 3) V µA For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. At force on body F = 500N, Ta = 25°C Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. Datasheet 3 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 13.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE nH SwitchingCharacteristics(perleg),InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. - 65 - ns - 0.76 - µC - 17.6 - A - -1360 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. - 112 - ns - 0.47 - µC - 4.5 - A - -655 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristics(perleg),InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. - 102 - ns - 1.80 - µC - 25.9 - A - -995 - A/µs Tvj=125°C, VR=400V, IF=30.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGW50N65H5. - 148 - ns - 0.98 - µC - 8.5 - A - -485 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet dirr/dt 4 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 100 60 90 50 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 80 70 60 50 40 30 40 30 20 20 10 10 0 25 50 75 100 125 150 0 175 25 Th,HEATSINKTEMPERATURE[°C] 50 75 100 125 150 175 Th,HEATSINKTEMPERATURE[°C] Figure 1. Powerdissipationperlegasafunctionof heatsinktemperature (Tvj≤175°C) Figure 2. Diodeforwardcurrentperlegasafunctionof heatsinktemperature (Tvj≤175°C) 200 0.1 D = 0.5 0.2 0.1 0.05 0.01 0.02 0.01 single pulse 0.001 160 140 120 100 80 60 40 1E-4 20 i: 1 2 3 4 5 6 7 ri[K/W]: 0.202274 0.337235 0.289542 0.199229 0.422136 0.046667 9.6E-3 τi[s]: 2.4E-4 1.4E-3 8.6E-3 0.071422 0.525208 3.996801 20.96846 1E-5 1E-7 Tvj=25°C,IF=30A Tvj=125°C,IF=30A Tvj=175°C,IF=30A 180 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 200 1 tp,PULSEWIDTH[s] 400 600 800 1000 1200 1400 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceperlegas Figure 4. Typicalreverserecoverytimeperlegasa afunctionofpulsewidth functionofdiodecurrentslope (D=tp/T) (VR=400V) Datasheet 5 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 2.50 30 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 2.25 35 Tvj=25°C,IF=30A Tvj=125°C,IF=30A Tvj=175°C,IF=30A 2.00 1.75 1.50 1.25 1.00 0.75 0.50 Tvj=25°C,IF=30A Tvj=125°C,IF=30A Tvj=175°C,IF=30A 25 20 15 10 5 0.25 0.00 200 400 600 800 1000 1200 0 200 1400 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeperlegasa functionofdiodecurrentslope (VR=400V) 800 1000 1200 1400 60 Tvj=25°C,IF=30A Tvj=125°C,IF=30A Tvj=175°C,IF=30A Tvj=25°C Tvj=175°C 50 -400 IF,FORWARDCURRENT[A] dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] 600 Figure 6. Typicalpeakreverserecoverycurrentperleg asafunctionofdiodecurrentslope (VR=400V) 0 -200 400 dIF/dt,DIODECURRENTSLOPE[A/µs] -600 -800 -1000 -1200 -1400 40 30 20 -1600 10 -1800 -2000 200 400 600 800 1000 1200 0 0.00 1400 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 7. Typicaldiodepeakrateoffallofrev.rec. currentperlegasafunctionofdiodecurrent slope (VR=400V) Datasheet 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 8. Typicaldiodeforwardcurrentperlegasa functionofforwardvoltage 6 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 2.25 IF=7.5A IF=15A IF=30A IF=45A IF=60A VF,FORWARDVOLTAGE[V] 2.00 1.75 1.50 1.25 1.00 0.75 0.50 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageperlegasa functionofjunctiontemperature Datasheet 7 V2.2 2019-05-20 IDFW60C65D1 EmitterControlledDiodeRapid1AdvancedIsolation PG-TO247-3-AI (PG­HSIP247­3) DIMENSIONS A A1 A2 A3 b c D D1 E E1 e L L1 øP øP1 Q Note: Datasheet MILLIMETERS MAX. 5.18 4.90 2.59 0.28 1.30 0.70 22.40 17.16 15.90 13.88 5.44 18.31 18.91 2.76 2.96 3.50 3.70 5.70 5.90 5.96 6.36 MIN. 4.70 2.23 0.20 1.10 0.50 22.20 16.96 15.70 13.68 DOCUMENT NO. Z8B00186434 REVISION 02 SCALE 3:1 0 1 2 3 4 5 6 7 8mm EUROPEAN PROJECTION ISSUE DATE 05.06.2018 For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC60068­2­6 and IEC60068­2­27). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of