IDFW80C65D1XKSA1

IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation RapidSwitchingEmitterControlledDiodeinfullyisolatedpackage  Features: A1 C1 C2 A2 A2 A1 •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •Maximumjunctiontemperature175°C •2500VRMSelectricalisolation,50/60Hz,t=1min •100%testedisolatedmountingsurface •Pb-freeleadplating •RoHScompliant C PotentialApplications: •AirConditioning •GPD(GeneralPurposeDrives) •IndustrialSMPS Packagepindefinition: Fully isolated package TO-247 •Pin1-anode(A1) •Pin2-cathode(C) •Pin3-anode(A2) ProductValidation: Qualifiedforindustrialapplicationsaccordingtotherelevanttests ofJEDEC47/20/22 KeyPerformanceandPackageParameters Type IDFW80C65D1 Datasheet www.infineon.com Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 2x 40A 1.45V 175°C C80ED1 PG-TO247-3-AI PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Datasheet 2 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation MaximumRatings(perleg) Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax Th=25°C Th=65°C IF 74.0 59.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A Diode surge non repetitive forward current Th=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTh=25°C PowerdissipationTh=65°C Ptot 112.0 82.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 320.0 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M IsolationvoltageRMS,f=50/60Hz,t=1min1) Visol 0.6 Nm 2500 V ThermalResistances(perleg) Parameter Symbol Conditions Value min. typ. max. Unit RthCharacteristics Diode thermal resistance,2) junction - heatsink Rth(j-h) - 1.14 1.34 K/W Thermal resistance junction - ambient Rth(j-a) - - 65 K/W ElectricalCharacteristics(perleg),atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Diode forward voltage VF IF=40.0A Tvj=25°C Tvj=175°C - 1.45 1.39 1.70 - V Reverse leakage current3) IR VR=650V Tvj=25°C Tvj=175°C - 1200 40 - µA 1) 2) 3) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing. At force on body F = 500N, Ta = 25°C Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg. Datasheet 3 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 13.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case LE nH SwitchingCharacteristics(perleg),InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 73 - ns - 1.10 - µC - 23.5 - A - -1500 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Tvj=25°C, VR=400V, IF=40.0A, diF/dt=820A/µs, Lσ=30nH, Cσ=40pF, switch IKW40N65ES5. SwitchingCharacteristics(perleg),InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 120 - ns - 2.62 - µC - 36.0 - A - -1250 - A/µs DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Datasheet dirr/dt Tvj=150°C, VR=400V, IF=40.0A, diF/dt=820A/µs, Lσ=30nH, Cσ=40pF, switch IKW40N65ES5. 4 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 120 90 110 80 70 90 IF,FORWARDCURRENT[A] Ptot,POWERDISSIPATION[W] 100 80 70 60 50 40 60 50 40 30 30 20 20 10 10 0 25 50 75 100 125 150 0 175 25 Th,HEATSINKTEMPERATURE[°C] 50 75 100 125 150 175 Th,HEATSINKTEMPERATURE[°C] Figure 1. Powerdissipationperlegasafunctionof heatsinktemperature (Tvj≤175°C) Figure 2. Diodeforwardcurrentperlegasafunctionof heatsinktemperature (Tvj≤175°C) 180 Tvj=25°C,IF=40A Tvj=150°C,IF=40A 160 0.1 D = 0.5 0.2 0.1 0.05 0.01 140 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 0.02 0.01 single pulse 0.001 120 100 80 60 40 1E-4 20 i: 1 2 3 4 5 6 7 ri[K/W]: 0.014102 0.20405 0.25828 0.2365 0.33792 0.20262 0.017193 τi[s]: 2.6E-5 3.0E-4 2.7E-3 0.022941 0.288184 1.292329 18.70911 1E-5 1E-8 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 0 400 1 tp,PULSEWIDTH[s] 500 600 700 800 900 1000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diodetransientthermalimpedanceperlegas Figure 4. Typicalreverserecoverytimeperlegasa afunctionofpulsewidth functionofdiodecurrentslope (D=tp/T) (VR=400V) Datasheet 5 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 3.5 45 Tvj=25°C,IF=40A Tvj=150°C,IF=40A 40 Irrm,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 400 Tvj=25°C,IF=40A Tvj=150°C,IF=40A 35 30 25 20 15 10 5 500 600 700 800 900 0 400 1000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalreverserecoverychargeperlegasa functionofdiodecurrentslope (VR=400V) 700 800 900 1000 120 Tvj=25°C,IF=40A Tvj=150°C,IF=40A Tvj=25°C Tvj=150°C 100 -500 IF,FORWARDCURRENT[A] dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] 600 Figure 6. Typicalpeakreverserecoverycurrentperleg asafunctionofdiodecurrentslope (VR=400V) 0 -250 500 dIF/dt,DIODECURRENTSLOPE[A/µs] -750 -1000 -1250 -1500 -1750 80 60 40 -2000 20 -2250 -2500 400 500 600 700 800 900 0 1000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 7. Typicaldiodepeakrateoffallofrev.rec. currentperlegasafunctionofdiodecurrent slope (VR=400V) Datasheet 0.0 0.5 1.0 1.5 2.0 2.5 VF,FORWARDVOLTAGE[V] Figure 8. Typicaldiodeforwardcurrentperlegasa functionofforwardvoltage 6 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation 2.25 IF=20A IF=40A IF=80A VF,FORWARDVOLTAGE[V] 2.00 1.75 1.50 1.25 1.00 0.75 0.50 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicaldiodeforwardvoltageperlegasa functionofjunctiontemperature Datasheet 7 V2.2 2020-09-25 IDFW80C65D1 EmitterControlledDiodeRapid1AdvancedIsolation PG-TO247-3-AI (PG­HSIP247­3) DIMENSIONS A A1 A2 A3 b c D D1 E E1 e L L1 øP øP1 Q Note: Datasheet MILLIMETERS MAX. 5.18 4.90 2.59 0.28 1.30 0.70 22.40 17.16 15.90 13.88 5.44 18.31 18.91 2.76 2.96 3.50 3.70 5.70 5.90 5.96 6.36 MIN. 4.70 2.23 0.20 1.10 0.50 22.20 16.96 15.70 13.68 DOCUMENT NO. Z8B00186434 REVISION 02 SCALE 3:1 0 1 2 3 4 5 6 7 8mm EUROPEAN PROJECTION ISSUE DATE 05.06.2018 For a proper handling and assembly of the advanced isolation device in the application the isolation layer must not be exposed to potential penetration via sharp implements or mechanical impacts/shocks, which exceed levels indicated in International Standard (IEC60068­2­6 and IEC60068­2­27). The advanced isolation device is intended only to be used assembled on an appropriate heatsink with recommended flatness of