IDH05S120

IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 1200 600 V • No reverse recovery / No forward recovery QC 3.2 18 nC • Temperature independent switching behavior IF; TC< 130 °C 3 5 A • Switching behavior benchmark • High surge current capability • Pb-free lead plating; RoHS compliant PG-TO220-2 • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation • Lowest Figure of Merit QC/IF thinQ!TM Diode designed for fast switching applications like: • SMPS e.g.; CCM PFC • Motor Drives; Solar Applications; UPS Type Package Marking Pin 1 Pin 2 IDH05S120 PG-TO220-2 D05S120 C A Maximum ratings Parameter Symbol Conditions Continuous forward current IF T C