IDH05SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC
600
V
• No reverse recovery / No forward recovery
QC
6
nC
• Temperature independent switching behavior
IF; TC< 130 °C
5
A
• Switching behavior benchmark
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
IDH05SG60C
PG-TO220-2
D05G60C
C
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Value
T C
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免费人工找货- 国内价格 香港价格
- 1+33.203001+4.00660
- 10+26.3037010+3.17410
- 100+20.69800100+2.49760
- 250+19.23670250+2.32130
- 500+16.55360500+1.99750
- 1000+15.954701000+1.92530
- 2500+15.355802500+1.85300
- 5000+14.744905000+1.77930