IDH08G65C6XKSA1

IDH08G65C6 6 th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation 6 (G6) is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF). The CoolSiC™ Schottky diode 650 V G6 has been designed to complement our 600 V and 650 V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Table 1 PG-TO220-2 Key performance parameters Parameter Value Unit VRRM 650 V QC (VR = 400 V) 12.2 nC EC (VR = 400 V) 2.2 µJ IF (TC ≤ 145 °C, D = 1) 8 A VF (IF = 8 A, Tj = 25 °C) 1.25 V Table 2 CASE 1 2 1) Cathode 2) Anode Package information Type / ordering Code Package Marking IDH08G65C6 PG-TO220-2 D0865C6 Features Best in class forward voltage (1.25 V)  Best in class figure of merit (Qc x VF)  High dv/dt ruggedness (150 V/ns)  Benefits System efficiency improvement  System cost and size savings due to the reduced cooling requirements  Enabling higher frequency and increased power density  Potential Applications Power factor correction in SMPS  Solar inverter  Uninterruptible power supply  Product Validation  Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22) Final Datasheet Please read the Important Notice and Warnings at the end of this document Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 Table of Content 1 Maximum ratings ............................................................................................................................... 3 2 Thermal characteristics ..................................................................................................................... 3 3 3.1 3.2 Electrical characteristics .................................................................................................................... 4 Static characteristics ............................................................................................................................... 4 AC characteristics .................................................................................................................................... 4 4 Diagrams ............................................................................................................................................ 5 5 Simplified forward characteristic ....................................................................................................... 7 6 Package outlines ................................................................................................................................ 8 Final Datasheet 2 Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 1 Table 3 Maximum ratings Maximum ratings Parameter Symbol Continuous forward current IF Values Unit Note/Test condition Min. Typ. Max. – – 8 TC ≤ 145 °C, D = 1 – – 11 TC ≤ 125 °C, D = 1 – – 20 TC ≤ 25 °C, D = 1 – – 35 – – 47 TC = 25 °C, tp = 10 ms – – 37 TC = 150 °C, tp = 10 ms – – 530 TC = 25 °C, tp = 10 µs – – 11 – – 6.9 Surge-repetitive forward current, sine halfwave1 IF,RM Surge non-repetitive forward current, sine halfwave IF,SM Non-repetitive peak forward current IF,max i²t value ∫ i²dt Repetitive peak reverse voltage VRRM – – 650 V TC = 25 °C Diode dv/dt ruggedness dv/dt – – 150 V/ns VR = 0..480 V Power dissipation Ptot – – 63 W TC = 25°C, RthJC,max Operating and storage temperature Tj Tstg -55 – 175 °C – Mounting torque – – – 70 Ncm M3 screw Unit Note/Test condition 2 Table 4 A A²s TC = 25 °C, tp = 10 ms TC = 25 °C, tp = 10 ms TC = 150 °C, tp = 10 ms Thermal characteristics Thermal characteristics (PG-TO-220-2) Values Parameter Symbol Thermal resistance, junctioncase RthJC Thermal resistance, junctionambient RthJA – – 62 Soldering temperature, wavesoldering only allowed at leads Tsold – – 260 Min. Typ. Max. – 1.4 2.4 – K/W leaded °C 1.6 mm (0.063 in.) from case for 10 s The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period). Final Datasheet 3 Rev. 2.0, 2017-05-23 1 6th Generation CoolSiCTM IDH08G65C6 3 Electrical characteristics 3.1 Table 5 Static characteristics Static characteristics Parameter Symbol DC blocking voltage VDC Diode forward voltage VF Reverse current 3.2 Table 6 IR Unit Note/Test condition Min. Typ. Max. 650 – – – 1.25 1.35 – 1.5 – IF = 8 A, Tj = 150 °C – 0.8 27 VR = 420 V, Tj = 25 °C – 27 – – 62 – Tj = 25 °C V µA IF = 8 A, Tj = 25 °C VR = 420 V, Tj = 125 °C VR = 420 V, Tj = 150 °C AC characteristics AC characteristics Parameter Symbol Total capacitive charge Qc Total capacitance Final Datasheet Values C Values Min. Typ. Max. – 12.2 – – 401 – – 24 – – 23 – 4 Unit Note/Test Condition nC VR = 400 V, Tj = 150 °C, di/dt = 200 A/µs, IF ≤ IF,MAX VR = 1 V, f = 1 MHz, Tj = 25 °C pF VR = 300 V, f = 1 MHz, Tj = 25 °C VR = 600 V, f = 1 MHz, Tj = 25 °C Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 4 Diagrams Ptot = f(TC) Figure 1 Power dissipation IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T Figure 2 IF = f(VF); tp = 10 µs; parameter: Tj Figure 3 Typ. forward characteristics Final Datasheet Max. forward current IF = f(VF); tp = 10 µs; parameter: Tj Figure 4 5 Typ. forward characteristics in surge current Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 QC = f(diF/dt); Tj = 150 °C; VR = 400 V; IF ≤ IF,max Figure 5 Typ. cap. charge vs. current slope IR = f(VR); parameter: Tj Figure 6 Zth,jc = f(tP); parameter: D = tP/T Figure 7 Max. transient thermal impedance Final Datasheet Typ. reverse current vs. reverse voltage C = f(VR); Tj = 25 °C; f = 1 MHz Figure 8 6 Typ. capacitance vs. reverse voltage Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 EC = f(VR) Figure 9 Typ. capacitance stored energy 5 Simplified forward characteristic VF  VTH  RDIFF  I F Treshold voltage (VTH): VTH T j   0.001  T j  0.766 V Differential resistance (RDIFF): 2 RDIFF T j   A  T j  B  T j  C  A  1.54  10 -6 DIFF B  1.12  10 -4 TH C  5.89  10 -2 VF = f(IF) Figure 10 Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ 8 A Equivalent forward current curve Final Datasheet Figure 11 7 Mathematical Equation Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 6 Package outlines Figure 12 Outlines of the package PG-TO220-2, dimensions in mm/inches Final Datasheet 8 Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH08G65C6 Revision History Major changes since the last revision Revision Date Subject (major changes since last revision) 2.0 2017-05-23 Release of final version Final Datasheet 9 Rev. 2.0, 2017-05-23 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2017-05-23 Published by Infineon Technologies AG 81726 München, Germany owners. © 2017 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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