IDH08SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features
Product Summary
• Revolutionary semiconductor material - Silicon Carbide
VDC
600
V
• No reverse recovery / No forward recovery
QC
12
nC
• Temperature independent switching behavior
IF; TC< 130 °C
8
A
• Switching behavior benchmark
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 20mA2)
• Optimized for high temperature operation
• Lowest Figure of Merit QC/IF
thinQ! 3G Diode designed for fast switching applications like:
• SMPS e.g.; CCM PFC
• Motor Drives; Solar Applications; UPS
Type
Package
Marking
Pin 1
Pin 2
IDH08SG60C
PG-TO220-2
D08G60C
C
A
Maximum ratings
Parameter
Symbol Conditions
Continuous forward current
IF
Value
T C
