SiC
Silicon Carbide Diode
5 t h Ge n er ation thin Q! T M
650V SiC Schottky Diode
IDK02G65C5
Final Da ta Sh eet
Rev. 2.1, 2017-08-11
Po wer Ma nage m ent & M ulti m ark et
5th Generation thinQ!™ SiC Schottky Diode
1
IDK02G65C5
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC
Schottky Barrier diodes. The Infineon proprietary diffusion soldering process,
already introduced with G3 is now combined with a new, more compact design and
thin-wafer technology. The result is a new family of products showing improved
efficiency over all load conditions, resulting from both the improved thermal
characteristics and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
1)
Qualified according to JEDEC for target applications
2)
Breakdown voltage tested at 4.5 mA
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC (VR = 400 V)
4
nC
EC (VR = 400 V)
0.7
µJ
IF (TC < 155°C)
2
A
Table 2
Pin 1
C
Pin Definition
Pin 2
Pin 3
A
n.a.
Type / ordering Code
IDK02G65C5
Package
PG-TO263-2
Marking
D0265C5
Related links
www.infineon.com/sic
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time period of 10 ms
Final Data Sheet
2
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings ................................................................................................................................ 4
3
Thermal characteristics ..................................................................................................................... 4
4
Electrical characteristics ................................................................................................................... 5
5
Electrical characteristics diagrams .................................................................................................. 6
6
Simplified forward characteristics model ........................................................................................ 8
7
Package outlines ................................................................................................................................ 9
Final Data Sheet
3
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Values
Unit
Min.
Typ.
–
–
Max.
2
Surge non-repetitive forward current, IF,SM
sine halfwave
–
–
23
–
–
22
Non-repetitive peak forward current
IF,max
–
–
138
i²t value
∫ i²dt
–
–
2.6
Continuous forward current
IF
Note/Test Condition
TC < 155°C, D = 1
A
TC = 25°C, tp = 10 ms
TC = 150°C, tp = 10 ms
TC = 25°C, tp = 10 µs
A²s
TC = 25°C, tp = 10 ms
–
–
2.5
Repetitive peak reverse voltage
VRRM
–
–
V
Tj = 25°C
Diode dv/dt ruggedness
dv/dt
–
–
650
100
V/ns
VR = 0..480 V
Power dissipation
Ptot
–
–
36
W
TC = 25°C
-55
–
175
°C
–
Operating and storage temperature
3
Table 4
Parameter
Tj;Tstg
TC = 150°C, tp = 10 ms
Thermal characteristics
Thermal characteristics TO-263-2
Symbol
Values
Min.
Unit
Thermal resistance, junction-case
RthJC
–
Typ.
2.6
Max.
4.2
Thermal resistance, junction1)
ambient
RthJA
–
–
62
–
35
–
Note/Test Condition
–
K/W
SMD version, device on
PCB, minimal footprint
SMD version, device on
1)
PCB, 6 cm² cooling area
1) Device on 40 mm * 40 mm * 1.5 mm one layer epoxy PCB FR4 with 6 cm² copper area (thickness 70 µm) for
cathode connection, PCB is vertical without air stream cooling.
Final Data Sheet
4
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Electrical characteristics
4
Table 5
Parameter
Electrical characteristics
Static characteristics
Symbol
DC blocking voltage
Diode forward voltage
Reverse current
Table 6
Parameter
Values
Unit
Note/Test Condition
VDC
Min.
650
Typ.
–
Max.
–
VF
–
1.5
1.8
–
1.8
2.2
IF = 2 A, Tj = 150°C
–
0.1
35
VR = 650 V, Tj = 25°C
–
0.02
12
–
0.4
240
IR
IR = 0.035 mA, Tj = 25°C
V
µA
IF = 2 A, Tj = 25°C
VR = 600 V, Tj = 25°C
VR = 650 V, Tj = 150°C
AC characteristics
Symbol
Values
Unit
Min.
Typ.
Max.
4
–
Total capacitive charge
Qc
–
Total Capacitance
C
–
70
–
–
9.1
–
–
8.9
–
Final Data Sheet
5
nC
Note/Test Condition
VR = 400 V, di/dt = 200A/µs
IF ≤ IF,MAX, Tj = 150°C
VR = 1 V, f = 1 MHz
pF
VR = 300 V, f = 1 MHz
VR = 600 V, f = 1 MHz
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 7
Power dissipation
Maximal diode forward current
30
40
0.1
0.3
35
25
0.5
0.7
30
1
20
IF[A]
Ptot[W]
25
20
15
15
10
10
5
5
0
0
25
50
75
100
125
150
25
175
50
75
100
TC[°C]
125
150
175
TC[°C]
IF = f(TC); RthJC,max; Tj ≤ 175°C;
Pto t= f(TC); RthJC,max
Parameter: D = duty cycle
Table 8
Typical forward characteristics
Typical forward characteristics in surge current
20
4
-55C
18
3.5
25C
16
3
100C
14
2.5
25C
12
150C
2
IF [A]
IF [A]
-55C
175C
100C
10
8
1.5
6
1
4
150C
0.5
2
0
0
0.5
1
1.5
VF [V]
2
2.5
0
3
0
IF = f(VF); tp = 200 µs; parameter: Tj
Final Data Sheet
175C
1
2
3
VF [V]
4
5
6
IF = f(VF); tp = 200 µs; parameter: Tj
6
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Electrical characteristics diagrams
Table 9
Typ. capacitance charge vs. current slope
1)
Typ. reverse current vs. reverse voltage
1.E-5
4.5
4
1.E-6
3.5
QC[nC]
3
175°C
IR [A]
2.5
2
1.E-7
1.5
150°C
100°C
1.E-8
1
25°C
0.5
-55°C
0
100
300
500
700
1.E-9
100
900
200
300
400
500
600
VR [V]
dIF/dt [A/µs]
QC = f(dIF/dt); Tj = 150°C; VR = 400 V; IF ≤ IF,max
IR = f(VR); parameter: Tj
1) Only capacitive charge, guaranteed by design.
Table 10
Max. transient thermal impedance
Typ. capacitance vs. reverse voltage
10
90
80
70
1
60
Zth,jc [K/W]
0.5
50
C [pF]
0.2
0.1
0.05
0.1
40
30
0.02
0.01
20
single pulse
10
0.01
1.E-06
0
1.E-03
1.E+00
0
1
10
tp [s]
VR [V]
Zth,jc = f(tP); parameter: D = tP/T
C = f(VR); Tj = 25°C; f = 1 MHz
Final Data Sheet
7
100
1000
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Electrical characteristics diagrams
Table 11
Typ. capacitance stored energy
2
1.8
1.6
EC[µJ]
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
200
400
600
VR [V]
EC = f(VR)
6
Simplified forward characteristics model
Table 12
Equivalent forward current curve
Mathematical Equation
VF VTH RDIFF I F
VTH T j 0.001 T j 1.04 V
RDIFF T j 6.42 10-6 T j 6.42 10- 4 T j 0.232
IF [A]
2
1/Rdiff
Vth
VF [V]
VF = f(IF)
Final Data Sheet
Tj [°C]; -55°C < Tj < 175°C; IF < 4 A
8
Rev. 2.1, 2017-08-11
5th Generation thinQ!TM SiC Schottky Diode
IDK02G65C5
Package outlines
7
Figure 1
Package outlines
Outlines TO-263-2, dimensions in mm/inches
Final Data Sheet
9
Rev. 2.1, 2017-08-11
5thGenerationthinQTMSiCSchottkyDiode
lDK02G65C5
RevisionHistory
lDK02G65C5
Revision:2017-09-06,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.1
2017-09-06
Updated IR,max values in table 5
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Rev.2.1,2017-09-06
