IDK04G65C5

SiC Silicon Carbide Diode 5 t h Ge ner ation thin Q! T M 650V SiC Schottky Diode IDK04G65C5 Final Da ta Sh eet Rev. 2.1, 2017-08-11 Po wer Ma nage m ent & M ulti m ark et 5th Generation thinQ!™ SiC Schottky Diode 1 IDK04G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 Features          Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications 2) Breakdown voltage tested at 9 mA Optimized for high temperature operation Benefits      System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications     Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit VDC 650 V QC (VR = 400 V) 7 nC EC (VR = 400 V) 1.4 µJ IF (TC < 150°C) 4 A Table 2 Pin 1 C Pin Definition Pin 2 Pin 3 A n.a. Type / ordering Code IDK04G65C5 Package PG-TO263-2 Marking D0465C5 Related links www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time period of 10 ms Final Data Sheet 2 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Simplified forward characteristics model ........................................................................................ 8 7 Package outlines ................................................................................................................................ 9 Final Data Sheet 3 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Values Unit Min. Typ. – – Max. 4 Surge non-repetitive forward current, IF,SM sine halfwave – – 38 – – 35 Non-repetitive peak forward current IF,max – – 215 i²t value ∫ i²dt – – 7.3 Continuous forward current IF Note/Test Condition TC < 150°C, D = 1 A TC = 25°C, tp = 10 ms TC = 150°C, tp = 10 ms TC = 25°C, tp = 10 µs A²s TC = 25°C, tp = 10 ms – – 6.1 Repetitive peak reverse voltage VRRM – – V Tj = 25°C Diode dv/dt ruggedness dv/dt – – 650 100 V/ns VR = 0..480 V Power dissipation Ptot – – 48 W TC = 25°C -55 – 175 °C – Operating and storage temperature 3 Table 4 Parameter Tj;Tstg TC = 150°C, tp = 10 ms Thermal characteristics Thermal characteristics TO-263-2 Symbol Values Min. Unit Thermal resistance, junction-case RthJC – Typ. 1.9 Max. 3.1 Thermal resistance, junction1) ambient RthJA – – 62 – 35 – Note/Test Condition – K/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm² cooling area 1) Device on 40 mm * 40 mm * 1.5 mm one layer epoxy PCB FR4 with 6 cm² copper area (thickness 70 µm) for cathode connection, PCB is vertical without air stream cooling. Final Data Sheet 4 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol DC blocking voltage Diode forward voltage Reverse current Table 6 Parameter Values Unit Note/Test Condition VDC Min. 650 Typ. – Max. – VF – 1.5 1.8 – 1.8 2.2 IF = 4 A, Tj = 150°C – 0.2 70 VR = 650 V, Tj = 25°C – 0.05 24 – 0.8 500 IR IR = 0.07 mA, Tj = 25°C V µA IF = 4 A, Tj = 25°C VR = 600 V, Tj = 25°C VR = 650 V, Tj = 150°C AC characteristics Symbol Values Unit Min. Typ. Max. Total capacitive charge Qc – 7 – Total Capacitance C – 130 – – 17 – – 16 – Final Data Sheet 5 nC Note/Test Condition VR = 400 V, di/dt = 200A/µs IF ≤ IF,MAX, Tj = 150°C VR = 1 V, f = 1 MHz pF VR = 300 V, f = 1 MHz VR = 600 V, f = 1 MHz Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Maximal diode forward current 45 50 0.1 40 0.3 0.5 40 35 0.7 1 30 IF[A] Ptot[W] 30 25 20 20 15 10 10 5 0 0 25 50 75 100 125 150 25 175 50 75 100 TC[°C] 125 150 175 TC[°C] IF = f(TC); RthJC,max;Tj ≤ 175°C; Ptot = f(TC); RthJC,max Parameter: D = duty cycle Table 8 Typical forward characteristics Typical forward characteristics in surge current 40 8 -55
C 7 35 25
C 6 5 25
C 25 150
C 4 IF [A] IF [A] -55
C 30 100
C 175
C 3 15 2 10 1 100
C 20 150
C 5 175
C 0 0 0.5 1 1.5 VF [V] 2 2.5 0 3 0 IF = f(VF); tp = 200 µs; parameter: Tj Final Data Sheet 1 2 3 VF [V] 4 5 6 IF = f(VF); tp = 200 µs; parameter: Tj 6 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope 1) Typ. Reverse current vs. reverse voltage 1.E-5 8 7 1.E-6 6 IR [A] QC[nC] 5 4 175°C 1.E-7 3 150°C 100°C 1.E-8 2 1 25°C -55°C 0 100 300 500 700 1.E-9 100 900 200 300 400 500 600 VR [V] dIF/dt [A/µs] QC = f(diF/dt); Tj = 150°C; VR = 400 V; IF ≤ IF,max IR = f(VR); parameter: Tj 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 180 160 140 1 100 0.2 C [pF] Zth,jc [K/W] 120 0.5 0.1 0.05 0.1 80 60 0.02 0.01 40 single pulse 20 0.01 1.E-06 0 1.E-03 1.E+00 0 1 10 tp [s] VR [V] Zth,jc = f(tP); parameter: D = tP/T C = f(VR); Tj = 25°C; f = 1 MHz Final Data Sheet 7 100 1000 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Electrical characteristics diagrams Table 11 Typ. capacitance stored energy 4 3.5 3 EC[µJ] 2.5 2 1.5 1 0.5 0 0 200 400 600 VR [V] EC = f(VR) 6 Simplified forward characteristics model Table 12 Equivalent forward current curve Mathematical Equation VF  VTH  RDIFF  I F VTH T j   0.001  T j  1.04 V RDIFF T j   3.21 10-6  T j  3.21 10- 4  T j  0.116  IF [A] 2 1/Rdiff Vth VF [V] VF = f(IF) Final Data Sheet Tj [°C]; -55°C < Tj < 175°C; IF < 8 A 8 Rev. 2.1, 2017-08-11 5th Generation thinQ!TM SiC Schottky Diode IDK04G65C5 Package outlines 7 Figure 1 Package outlines Outlines TO-263-2, dimensions in mm/inch Final Data Sheet 9 Rev. 2.1, 2017-08-11 5thGenerationthinQTMSiCSchottkyDiode IDK04G65C5 RevisionHistory IDK04G65C5 Revision:2017-09-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2017-09-06 Updated IR,max values in table 5 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 10 Rev.2.1,2017-09-06