IDK10G120C5XTMA1

IDK10G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 5 th Generation CoolSiC TM IGC13R65U8W2 1200V Schottky Diode SiC Diode Features  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Pb-free lead plating; RoHS compliant 1 2 Pin definition Pin 1 and backside: Cathode 1 Pin 2: Anode CASE 2 Potential applications  Drives  Industrial power supplies: Industrial UPS  Solar central inverters and Solar string inverter Product validation  Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Description         System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System size/cost savings due to reduced heatsink requirements and smaller magnetics Reduced EMI Highest efficiency across the entire load range Robust diode operation during surge events High reliability Related Links: www.infineon.com/SiC Key performance parameters Type IDK10G120C5 VDC IF QC Tvj,max Marking Package 1200 V 10 A 41nC 175°C D1012C5 PG-TO263-2 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 1 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Table of contents Table of contents Features ........................................................................................................................................ 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Description .................................................................................................................................... 1 Key performance parameters........................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 5 3 Electrical Characteristics ........................................................................................................ 6 4 Electrical Characteristics Diagrams .......................................................................................... 7 5 Package Drawing .................................................................................................................. 10 Revision history............................................................................................................................. 11 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 2 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Maximum ratings 1 Maximum ratings Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Repetitive peak reverse voltage TC ≥ 25°C Symbol Value Unit VRRM 1200 V Continuous forward current for Rth(j-c,max) TC = 155°C, D=1 IF TC = 135°C, D=1 TC = 25°C, D=1 10.0 15.2 A 31.9 Surge repetitive forward current, sine halfwave1 TC=25°C, tp=10ms IF,RM TC=100°C, tp=10ms 40 A 30 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms IF,SM TC=150°C, tp=10ms 99 A 84 Non-repetitive peak forward current TC = 25°C, tp=10 µs IF,max 711 A ∫ i²dt 49 A²s i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms 35 Diode dv/dt ruggedness VR=0...960 V Power dissipation for Rth(j-c,max) TC = 25°C 1 dv/dt 80 V/ns Ptot 165 W Not subject to production test. The test was performed with 20000 pulses (two consecutive half-wave rectified sines with 10 ms period). Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 3 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Maximum ratings Operating temperature Tvj -55…175 °C Storage temperature Tstg -55…150 °C Soldering temperature, reflow soldering (MSL1 according to JEDEC J-STD-020) Tsold 260 °C Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 4 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Thermal resistances 2 Thermal resistances Value Parameter Symbol Conditions Unit min. typ. max. - 0.7 0.91 K/W - - 62 K/W Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Datasheet www.infineon.com Rth(j-c) Rth(j-a) Leaded Please read the Important Notice and Warnings at the end of this document page 5 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Electrical Characteristics 3 Electrical Characteristics Static Characteristics, at Tvj=25°C, unless otherwise specified Parameter Symbol Conditions DC blocking voltage VDC Diode forward voltage VF Reverse current IR Tvj = 25°C, IR=50µA IF= 10A, Tvj=25°C IF= 10A, Tvj=150°C VR=1200V, Tvj=25°C VR=1200V, Tvj=150°C min. Value typ. max. 1200 - - - 1.5 2.0 4 22 1.8 62 - Unit V V µA Dynamic Characteristics, at Tvj=25°C, unless otherwise specified Parameter Symbol Conditions Total capacitive charge min. Value typ. max. Unit VR = 800V, Tvj=150°C QC VR QC   C (V )dV - 41 - nC - 525 37 29 - pF 0 Total Capacitance Datasheet www.infineon.com C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz Please read the Important Notice and Warnings at the end of this document page 6 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams 4 Electrical Characteristics Diagrams Figure 1. Power dissipation as function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current as function of temperature, parameter: Tvj≤175°C, Rth(j-c),max, D=duty cycle, Vth, Rdiff @ Tvj=175°C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 µs, parameter: Tvj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 µs, parameter: Tvj Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 7 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams Figure 5. Typical capacitive charge as function of current slope, QC=f(dIF/dt), Tvj=150°C Figure 6. Typical reverse characteristics, IR=f(VR), parameter: Tvj Figure 7. Max. transient thermal impedance, Zth,j-c=f(tP), parameter: D=tP/T Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tvj=25°C; f=1 MHz Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 8 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Electrical Characteristics Diagrams Figure 9. Typical capacitively stored energy as function of reverse voltage, EC=f(VR) Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 9 of 12 V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC Diode Package Drawing 5 Package Drawing PG-TO263-2 1) Typical Metal surface min. X = 7.25, y = 6.9 All metal surfaces: tin plated, except area of cut All dimensions do not include mold flash or protrusions All dimensions are in units mm The drawings is in complicance with ISO 128-30, Projection Method 1 [ Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 10 of 12 ] V 2.0 2019-10-28 5th Generation CoolSiCTM 1200V Schottky Diode SiC-Diode Revision history Revision history Document version Date of release Description of changes V 1.0 2019-01-25 Preliminary Datasheet V 2.0 2019-10-28 Final Datasheet Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document page 11 of 12 V 2.0 2019-10-28 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2017-09-05 Published by Infineon Technologies AG 81726 München, Germany © 2019 Infineon Technologies AG. All Rights Reserved. Do you have a question about this document? Email: erratum@infineon.com Document reference n.a. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. 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