IDM10G120C5XTMA1

Diod e Silicon Carbide Schottky Diode IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Da ta sheet Rev. 2.1 2021-06-09 Indust rial Po wer C o ntrol IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:           Revolutionary semiconductor material - Silicon Carbide No reverse recovery current / No forward recovery Temperature independent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution Excellent thermal performance Extended surge current capability Specified dv/dt ruggedness Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant 1 2 Benefits       System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Related Links: www.infineon.com/sic Applications     Solar inverters Uninterruptable power supplies Motor drives Power Factor Correction Package pin definitions   Pin 1 and backside – cathode Pin 2 – anode Key Performance and Package Parameters Type IDM10G120C5 VDC IF QC Tj,max Marking Package 1200V 10A 41nC 175°C D1012C5 PG-TO252-2 1) J-STD20 and JESD22 Final Data Sheet 2 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Table of Contents Description…. ............................................................................................................................................. 2 Table of Contents ........................................................................................................................................ 3 Maximum ratings ......................................................................................................................................... 4 Thermal Resistances .................................................................................................................................. 4 Electrical Characteristics............................................................................................................................. 5 Electrical Characteristics diagram .............................................................................................................. 5 Package Drawings ...................................................................................................................................... 9 Revision History ........................................................................................................................................ 10 Disclaimer…. ............................................................................................................................................. 10 Final Data Sheet 3 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Maximum ratings Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continoues forward current for Rth(j-c,max) TC = 160°C, D=1 TC = 135°C, D=1 TC = 25°C, D=1 Surge non-repetitive forward current, sine halfwave TC=25°C, tp=10ms TC=150°C, tp=10ms Non-repetitive peak forward current TC = 25°C, tp=10 µs i²t value TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Diode dv/dt ruggedness VR=0...960 V Power dissipation TC = 25°C 10 18 38 IF A IF,SM 99 84 IF,max 711 ∫ i²dt 49 35 A²s dv/dt 150 V/ns Ptot 223 W Operating temperature Tj -55…175 Storage temperature Tstg -55…150 Soldering temperature, Wave- and reflowsoldering allowed (reflow MSL1) °C Tsold 260 Thermal Resistances Parameter Value Symbol Conditions min. typ. max. - 0.5 0.7 Unit Characteristic Diode thermal resistance, junction – case Thermal resistance, junction – ambient Rth(j-c) SMD version, device on PCB, 62 minimal footprint Rth(j-a) SMD version, device on PCB, 35 6 cm² cooling area2) 2) Device on 40 mm*40mm*1.5 epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper for cathode connection. PCB is vertical without air stream cooling. Final Data Sheet 4 K/W Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Electrical Characteristics Static Characteristic, at Tj=25°C, unless otherwise specified Parameter Symbol Conditions DC blocking voltage VDC Diode forward voltage VF Reverse current IR Value Tj = 25°C IF= 10 A, Tj=25°C IF= 10 A, Tj=150°C VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C min. typ. max. 1200 - 1.5 2.0 4 22 1.8 2.6 62 320 Unit V V µA Dynamic Characteristics, at Tj=25°C, unless otherwise specified Parameter Value Symbol Conditions Unit min. typ. max. - 41 - nC - 525 37 29 - pF VR = 800 V, Tj=150°C Total capacitive charge QC VR QC   C (V )dV 0 Total Capacitance C VR=1 V, f=1 MHz VR=400 V, f=1 MHz VR=800 V, f=1 MHz Electrical Characteristics diagram Final Data Sheet 5 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Figure 1. Power dissipation as a function of case temperature, Ptot=f(TC), Rth(j-c),max Figure 2. Diode forward current as function of temperature, Tj≤175°C, Rth(j-c),max, parameter D=duty cycle, Vth, Rdiff @ Tj=175°C Figure 3. Typical forward characteristics, IF=f(VF), tp= 10 µs, parameter: Tj Figure 4. Typical forward characteristics in surge current, IF=f(VF), tp= 10 µs, parameter: Tj Final Data Sheet 6 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Figure 5. Typical capacitance charge as function of current slope1, QC=f(dIF/dt), Tj=150°C Figure 6. Typical reverse current as function of reverse voltage, IR=f(VR), parameter: Tj 1) Only capacitive charge, guaranteed by design. Figure 7. Max. transient thermal impedance, Zth,jc=f(tP), parameter: D=tP/T Final Data Sheet Figure 8. Typical capacitance as function of reverse voltage, C=f(VR); Tj=25°C; f=1 MHz 7 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Figure 9. Typical capacitance stored energy as function of reverse voltage, VR EC   C (V )VdV 0 Final Data Sheet 8 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Package Drawings Final Data Sheet PG-TO252-2 9 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Revision History IIDM10G120C5 Revision: 2021-06-09, Rev. 2.1 Previous Revision: Revision Date Subjects (major changes since last version) 2.0 2015-22-07 Final data sheet Increased dv/dt ruggedness 2.1 2021-06-09 Disclaimer We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Final Data Sheet 10 Rev.2.1, 2021-06-09 IDM10G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2021. All Rights Reserved. Important Notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. Final Data Sheet 11 Rev.2.1, 2021-06-09