IDP15E60XKSA1

IDP15E60 Fast Switching Emitter Controlled Diode Product Summary Features • 600V Emitter Controlled technology VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage PG-TO220-2 • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP15E60 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D15E60 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF IF 29.2 29.2 19.6 19.6 Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 6060 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 4545 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation dissipation TPower C = 25C TTCC==25°C 90C PtotP t o t 83.3 47.2 83.3 C Value Value 600 600 Unit Unit VV A A TC=25°C, tp=10 ms, sine halfwave Tj Operating TC=90°C junction temperature Tstg Tj , T stg TS T S Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 in.) from (0.063 case for 10from s case for 10s wavesoldering, 1.6mm in.) Rev. 2.6 Page 1 -40…+175 47.2 -55...+150 -55...+175 260 260 WW °C°C °C 2013­12­05 IDP15E60 Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - 35 - @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics IR Reverse leakage current μA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 1250 VF Forward voltage drop V IF=15A, T j=25°C - 1.5 2 IF=15A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.6 Page 2 2013­12­05 IDP15E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics t rr Reverse recovery time ns V R=400V, IF=15A, diF/dt=1000A/μs, Tj=25°C - 87 - V R=400V, IF=15A, diF/dt=1000A/μs, Tj=125°C - 124 - V R=400V, IF=15A, diF/dt=1000A/μs, Tj=150°C - 131 - I rrm Peak reverse current A V R=400V, IF = 15A, diF/dt=1000A/μs, Tj =25°C - 13.7 - V R=400V, IF =15A, diF/dt=1000A/μs, T j=125°C - 16.4 - V R=400V, IF =15A, diF/dt=1000A/μs, T j=150°C - 19.3 - Q rr Reverse recovery charge nC V R=400V, IF=15A, diF/dt=1000A/μs, Tj=25°C - 595 - V R=400V, IF =15A, diF/dt=1000A/μs, T j=125°C - 995 - V R=400V, IF =15A, diF/dt=1000A/μs, T j=150°C - 1104 - V R=400V, IF=15A, diF/dt=1000A/μs, Tj=25°C - 3.6 - V R=400V, IF=15A, diF/dt=1000A/μs, Tj=125°C - 4.3 - V R=400V, IF=15A, diF/dt=1000A/μs, Tj=150°C - 4.5 - S Reverse recovery softness factor Rev. 2.6 Page 3 2013­12­05 IDP15E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 90 30 W A 60 20 IF P tot 70 50 15 40 30 10 20 5 10 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 50 2 V 30A A 1.8 VF IF 1.7 30 20 -55°C 25°C 100°C 150°C 1.6 1.5 15A 1.4 1.3 7.5A 10 1.2 1.1 0 0.5 1 1.5 2.5 V VF Rev. 2.6 Page 4 1 -60 -20 20 60 100 160 °C Tj 2013­12­05 IDP15E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 500 1450 ns nC 400 30A 1250 Qrr trr 350 30A 15A 7.5A 300 1150 15A 1050 250 950 200 850 150 7.5A 750 100 650 50 0 200 300 400 500 600 700 800 550 200 A/μs 1000 di F/dt 300 400 500 600 700 800 A/μs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 11 18 A 16 30A 15A 7.5A 15 9 13 S Irr 14 8 30A 12 7 11 15A 10 6 9 8 7,5A 5 7 6 4 5 4 200 Rev. 2.6 300 400 500 600 700 800 A/μs 1000 di F/dt Page 5 3 200 300 400 500 600 700 800 A/μs 1000 diF/dt 2013­12­05 IDP15E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP15E60 K/W ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 0.05 10 -2 0.02 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev. 2.6 Page 6 2013­12­05 IDP15E60 Package Outline: TO220-2 Rev. 2.6 Page 7 2013­12­05 IDP15E60 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Published by Legal Disclaimer Infineon Technologies AG The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. 81726 Munich, Germany With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the2013 application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, © Infineon Technologies AG including without limitation, warranties of non-infringement of intellectual property rights of any third party. All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Legal Disclaimer Warnings Due to technical requirements, components may contain dangerous substances. on theoftypes in The information given in this document shall in no event be regardedForasinformation a guarantee conditions or question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such any information regarding be theexpected application of the Technologies and all components can reasonably to cause thedevice, failure ofInfineon that life-support device orhereby systemdisclaims or to affectany the safety or effectiveness that device or system. Life support devices or systems are intended to be implanted in the human warranties and of liabilities of any kind, including without limitation, warranties of non-infringement of intellectual body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the property rights third party.may be endangered. health of the useroforany other persons Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.6 Page 8 2013­12­05