IDP18E120

IDP18E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 18 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP18E120 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D18E120 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 31 TC=90°C 19.8 Surge non repetitive forward current I FSM 78 I FRM 47 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 113 TC=90°C 54 Operating and storage temperature Soldering temperature Tj , Tstg TS wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev.2.3 Page 1 -55...+150 260 °C °C 2009-08-19 IDP18E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.1 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 1400 Forward voltage drop VF V IF=18A, T j=25°C - 1.65 2.15 IF=18A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2009-08-19 IDP18E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 195 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 280 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 300 - Peak reverse current A I rrm V R=800V, IF = 18 A, di F/dt=800A/µs, T j=25°C - 20.2 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 24.4 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 25.3 - Reverse recovery charge nC Q rr V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 1880 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=125°C - 3200 - V R=800V, IF =18A, diF/dt=800A/µs, Tj=150°C - 3540 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =25°C - 5.5 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =125°C - 6.6 - V R=800V, IF=18A, diF/dt=800A/µs, Tj =150°C - 6.7 - Reverse recovery softness factor Rev.2.3 S Page 3 2009-08-19 IDP18E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 35 120 W A 100 25 80 IF P tot 90 70 20 60 15 50 40 10 30 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 54 2.6 A V -55°C 25°C 100°C 150°C 42 36A 2.2 IF VF 36 2 30 18A 24 1.8 18 1.6 12 9A 1.4 6 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2.3 Page 4 -20 20 60 100 °C Tj 160 2009-08-19 IDP18E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 1000 4600 nC ns 36A 4200 800 4000 36A 18A 9A Q rr 3800 trr 700 3600 18A 3400 600 3200 500 3000 2800 400 2600 300 9A 2400 2200 200 2000 100 200 300 400 500 600 700 800 1800 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 30 18 36A 18A 9A 14 20 S Irr A 36A 18A 9A 12 10 15 8 6 10 4 5 200 Rev.2.3 300 400 500 600 700 800 2 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 di F/dt 2007-08-19 IDP18E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP18E120 K/W ZthJC 10 0 10 -1 10 -2 D = 0.50 0.20 10 0.10 -3 0.05 single pulse 0.02 10 -4 10 -5 -7 10 0.01 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.3 Page 6 2009-08-19 IDP18E120 TO-220-2 Rev.2.3 Page 7 2009-08-19 IDP18E120 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page 8 2009-08-19