IDP20E65D2XKSA1

Diode RapidSwitchingEmitterControlledDiode IDP20E65D2 EmitterControlledDiode Datasheet IndustrialPowerControl IDP20E65D2 EmitterControlledDiode RapidSwitchingEmitterControlledDiode  Features: A •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Fastrecovery •Softswitching •Lowreverserecoverycharge •Lowforwardvoltageandstableovertemperature •175°Cjunctionoperatingtemperature •Easyparalleling •Pb-freeleadplating;RoHScompliant C Applications: C •BoostdiodeinCCMPFC C A KeyPerformanceandPackageParameters Type IDP20E65D2 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 20A 1.6V 175°C E20ED2 PG-TO220-2-1 2 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 40.0 20.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 60.0 A Diode surge non repetitive forward current TC=25°C,tp=8.3ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 120.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 120.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 1.25 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. Unit StaticCharacteristic Diode forward voltage VF IF=20.0A Tvj=25°C Tvj=175°C - 1.60 1.65 2.20 - V Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C - 2.0 500.0 40.0 - µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 7.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=20.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 32 - ns - 0.25 - µC - 12.2 - A - -900 - A/µs Tvj=25°C, VR=400V, IF=20.0A, diF/dt=400A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 43 - ns - 0.19 - µC - 6.3 - A - -420 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=20.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 55 - ns - 0.58 - µC - 18.0 - A - -650 - A/µs Tvj=125°C, VR=400V, IF=20.0A, diF/dt=400A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 61 - ns - 0.38 - µC - 9.3 - A - -500 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode 120 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 110 Ptot,POWERDISSIPATION[W] 100 90 80 70 60 50 40 30 20 10 0 25 50 75 100 125 150 1 D=0.5 0.2 0.1 0.05 0.02 0.1 0.01 single pulse i: 1 2 3 4 5 6 ri[K/W]: 0.0222558 0.288855 0.383376 0.52332 0.0305613 1.4E-3 τi[s]: 2.3E-5 1.4E-4 9.5E-4 5.2E-3 0.07353007 2.05804 0.01 1E-6 175 1E-5 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 0.01 0.1 0.8 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 80 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 0.7 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 0.001 Figure 2. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 90 70 60 50 40 30 20 0.6 0.5 0.4 0.3 0.2 0.1 10 0 1E-4 tp,PULSEWIDTH[s] 0 500 1000 1500 2000 2500 0.0 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 0 500 1000 1500 2000 2500 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Typicalreverserecoverytimeasafunctionof Figure 4. Typicalreverserecoverychargeasafunction diodecurrentslope ofdiodecurrentslope (VR=400V) (VR=400V) 6 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode 30 0 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 25 -250 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irrm,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 20 15 10 -750 -1000 5 0 -500 -1250 0 500 1000 1500 2000 2500 -1500 3000 0 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1500 2000 2500 3000 2.50 Tj=25°C Tj=175°C 35 2.25 30 2.00 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 1000 Figure 6. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 40 25 20 15 10 5 0 500 diF/dt,DIODECURRENTSLOPE[A/µs] IF=10A IF=20A IF=40A 1.75 1.50 1.25 1.00 0.75 0.0 0.5 1.0 1.5 2.0 0.50 2.5 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaldiodeforwardcurrentasafunctionof Figure 8. Typicaldiodeforwardvoltageasafunctionof forwardvoltage junctiontemperature 7 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode PG-TO220-2-1 8 Rev.2.1,2014-09-18 IDP20E65D2 EmitterControlledDiode vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E = off ∫V t CE t4 x IC x d t E 1 t1 on = ∫V t CE x IC x d t 2% VCE 3 t2 t3 t4 9 t Rev.2.1,2014-09-18 IDP20E65D2 Emitter Controlled Diode Revision History IDP20E65D2 Revision: 2014-09-18, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-09-18 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 Rev. 2.1, 2014-09-18