IDP30E120XKSA1

IDP30E120 Fast Switching Diode Product Summary Features VRRM • 1200 V diode technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 30 A VF 1.65 V T jmax 150 °C PG-TO220-2 • Low forward voltage • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP30E120 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D30E120 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak reverse voltage VRRM 1200 V Continous forward current IF A TC=25°C 50 TC=90°C 30 Surge non repetitive forward current I FSM 102 I FRM 76.5 TC=25°C, tp=10 ms, sine halfwave Maximum repetitive forward current TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation W Ptot TC=25°C 138 TC=90°C 66 Operating and storage temperature Soldering temperature Tj , Tstg TS wavesoldering, 1.6mm (0.063 in.) from case for 10s Rev.2.3 Page 1 -55...+150 260 °C °C 2009-08-19 IDP30E120 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 1) - 35 - K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=1200V, T j=25°C - - 100 V R=1200V, T j=150°C - - 2500 Forward voltage drop VF V IF=30A, T j=25°C - 1.65 2.15 IF=30A, T j=150°C - 1.7 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.3 Page 2 2009-08-19 IDP30E120 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 243 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C - 355 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C - 380 - Peak reverse current A I rrm V R=800V, IF = 30 A, di F/dt=850A/µs, T j=25°C - 23.7 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C - 28.3 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=150°C - 29.5 - Reverse recovery charge nC Q rr V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 2630 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=125°C - 4700 - V R=800V, IF =30A, diF/dt=850A/µs, Tj=150°C - 5200 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =25°C - 6 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =125°C - 7.4 - V R=800V, IF=30A, diF/dt=850A/µs, Tj =150°C - 7.5 - Reverse recovery softness factor Rev.2.3 S Page 3 2009-08-19 IDP30E120 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 150°C parameter: Tj≤ 150°C 55 140 W A 120 45 100 40 90 35 IF P tot 110 80 30 70 25 60 50 20 40 15 30 10 20 5 10 0 25 50 75 100 0 25 150 °C 50 75 100 150 °C TC TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 90 2.4 A 60A V IF 60 -55°C 25°C 100°C 150°C VF 70 2 50 1.8 30A 40 30 1.6 15A 20 1.4 10 0 0 0.5 1 1.5 2 1.2 -60 3 V VF Rev.2.3 Page 4 -20 20 60 100 160 °C Tj 2009-08-19 IDP30E120 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125 °C 1100 6500 ns nC 900 60A trr 800 Q rr 5500 60A 30A 15A 5000 30A 700 4500 600 4000 500 3000 300 200 200 15A 3500 400 300 400 500 600 700 800 2500 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 800V, T j = 125°C parameter: VR = 800V, Tj = 125°C 18 35 A 14 60A 30A 15A S Irr 25 60A 30A 15A 12 20 10 15 8 10 5 200 Rev.2.3 6 300 400 500 600 700 800 4 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 2009-08-19 IDP30E120 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP30E120 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.3 Page 6 2009-08-19 IDP30E120 TO-220-2 Rev.2.3 Page 7 2009-08-19 IDP30E120 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.3 Page 8 2009-08-19