IDP30E65D1

Diode RapidSwitchingEmitterControlledDiode IDP30E65D1 EmitterControlledDiodeRapid1Series Datasheet IndustrialPowerControl IDP30E65D1 EmitterControlledDiodeRapid1Series RapidSwitchingEmitterControlledDiode  Features: A •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •175°Cjunctionoperatingtemperature •Pb-freeleadplating;RoHScompliant C Applications: C •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies C A KeyPerformanceandPackageParameters Type IDP30E65D1 Vrrm If Vf,Tvj=25°C Tvjmax Marking Package 650V 30A 1.35V 175°C E30ED1 PG-TO220-2-1 2 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 3 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Repetitivepeakreversevoltage,Tvj≥25°C VRRM 650 V Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 90.0 A Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C Ptot 143.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 180.0 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit Diode thermal resistance,1) junction - case Rth(j-c) 1.05 K/W Thermal resistance junction - ambient Rth(j-a) 62 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.30 1.26 1.70 - - 4.0 800.0 40.0 - Unit StaticCharacteristic Diode forward voltage VF IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C V µA ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 7.0 - Unit DynamicCharacteristic Internal emitter inductance measured 5mm (0.197 in.) from case 1) LE nH Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached. 4 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 64 - ns - 0.67 - µC - 16.0 - A - -1250 - A/µs Tvj=25°C, VR=400V, IF=30.0A, diF/dt=300A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 95 - ns - 0.51 - µC - 7.0 - A - -600 - A/µs DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 103 - ns - 1.41 - µC - 23.0 - A - -1150 - A/µs Tvj=125°C, VR=400V, IF=30.0A, diF/dt=300A/µs, Lσ=30nH, Cσ=40pF, switch IKW50N65H5 - 129 - ns - 0.92 - µC - 10.3 - A - -580 - A/µs DiodeCharacteristic,atTvj=175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt 5 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] 150 Ptot,POWERDISSIPATION[W] 125 100 75 50 25 0 25 50 75 100 125 150 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.1 single pulse i: 1 2 3 4 5 6 ri[K/W]: 0.018165 0.260192 0.287872 0.461564 0.023701 1.6E-3 τi[s]: 2.6E-5 1.8E-4 1.4E-3 6.0E-3 0.096993 2.0799 0.01 1E-6 175 1E-5 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 0.01 0.1 2.00 Tj=25°C, IF = 30A Tj=175°C, IF = 30A 160 Tj=25°C, IF = 30A Tj=175°C, IF = 30A 1.75 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] 0.001 Figure 2. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 180 140 120 100 80 60 40 1.50 1.25 1.00 0.75 0.50 0.25 20 0 200 1E-4 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 0.00 200 3000 diF/dt,DIODECURRENTSLOPE[A/µs] 600 1000 1400 1800 2200 2600 3000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Typicalreverserecoverytimeasafunctionof Figure 4. Typicalreverserecoverychargeasafunction diodecurrentslope ofdiodecurrentslope (VR=400V) (VR=400V) 6 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series 50 0 Tj=25°C, IF = 30A Tj=175°C, IF = 30A 40 35 30 25 -400 -600 -800 -1000 20 -1200 15 -1400 10 -1600 5 0 Tj=25°C, IF = 30A Tj=175°C, IF = 30A -200 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irrm,REVERSERECOVERYCURRENT[A] 45 -1800 0 1000 2000 3000 4000 -2000 200 5000 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 1400 1800 2200 2600 3000 2.00 Tj=25°C Tj=175°C IF=15A IF=30A IF=60A 1.75 VF,FORWARDVOLTAGE[V] 50 IF,FORWARDCURRENT[A] 1000 Figure 6. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 60 40 30 20 10 0 0.00 600 diF/dt,DIODECURRENTSLOPE[A/µs] 1.50 1.25 1.00 0.75 0.25 0.50 0.75 1.00 1.25 1.50 1.75 0.50 2.00 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaldiodeforwardcurrentasafunctionof Figure 8. Typicaldiodeforwardvoltageasafunctionof forwardvoltage junctiontemperature 7 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series PG-TO220-2-1 8 Rev.2.1,2014-09-18 IDP30E65D1 EmitterControlledDiodeRapid1Series vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E = off ∫V t CE t4 x IC x d t E 1 t1 on = ∫V t CE x IC x d t 2% VCE 3 t2 t3 t4 9 t Rev.2.1,2014-09-18 IDP30E65D1 Emitter Controlled Diode Rapid 1 Series Revision History IDP30E65D1 Revision: 2014-09-18, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-09-18 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 10 Rev. 2.1, 2014-09-18