IDP45E60

IDP45E60 Fast Switching Switching Diode Emitter Controlled Diode Fast Product Summary Features VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage PG-TO220-2 • Easy paralleling • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • Qualified according to JEDEC for target applications Type Package IDP45E60 PG-TO220-2 Ordering Code - Marking Pin 1 PIN 2 PIN 3 D45E60 C A - Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C IF IF 7171 4747 Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 162 162 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 111.5 111.5 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation Power TC = 25Cdissipation TTCC==25°C 90C PtotP t o t 187 106 187 C Value Value 600 600 Unit Unit VV A A TC=25°C, tp=10 ms, sine halfwave Tj Operating TC=90°C junction temperature Tstg Tj , T stg TS T S Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 from (0.063 case for 10from s case for 10s wavesoldering,in.) 1.6mm in.) Rev.2.5 Page 1 -40…+175 106 -55...+150 -55...+175 260 260 WW °C°C °C 2013­12­05 IDP45E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA - - 62 - 35 - @ min. footprint @ 6 cm 2 cooling area 1) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics IR Reverse leakage current μA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 3000 VF Forward voltage drop V IF=45A, T j=25°C - 1.5 2 IF=45A, T j=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.5 Page 2 2013­12­05 IDP45E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values min. typ. Unit max. Dynamic Characteristics t rr Reverse recovery time ns V R=400V, IF=45A, diF/dt=1000A/μs, Tj=25°C - 140 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=125°C - 185 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=150°C - 195 - I rrm Peak reverse current A V R=400V, IF = 45A, diF/dt=1000A/μs, Tj =25°C - 23 - V R=400V, IF =45A, diF/dt=1000A/μs, T j=125°C - 28.1 - V R=400V, IF =45A, diF/dt=1000A/μs, T j=150°C - 29 - Q rr Reverse recovery charge nC V R=400V, IF=45A, diF/dt=1000A/μs, Tj=25°C - 1400 - V R=400V, IF =45A, diF/dt=1000A/μs, T j=125°C - 2650 - V R=400V, IF =45A, diF/dt=1000A/μs, T j=150°C - 2900 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=25°C - 3.1 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=125°C - 4.2 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=150°C - 4.4 - S Reverse recovery softness factor Rev.2.5 Page 3 2013­12­05 IDP45E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 195 80 W A 165 60 135 IF P tot 150 120 50 105 40 90 75 30 60 20 45 30 10 15 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 140 2.4 A V -55°C 25°C 100°C 150°C 2 90A IF VF 100 80 1.8 60 1.6 45A 40 1.4 22,5A 20 0 0 1.2 0.5 1 1.5 2.5 V VF Rev.2.5 Page 4 1 -60 -20 20 60 100 160 °C Tj 2013­12­05 IDP45E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 450 4000 ns nC 90A 90A 45A 22.5A trr Q rr 350 3000 300 45A 2500 250 2000 22,5A 200 1500 150 100 200 300 400 500 600 700 800 1000 200 A/μs 1000 di F/dt 300 400 500 600 700 800 A/μs 1000 di F/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 8 35 A 7 90A 45A 22.5A 25 6.5 S Irr 90A 6 5.5 20 45A 5 22,5A 15 4.5 4 10 3.5 5 200 Rev.2.5 300 400 500 600 700 800 A/μs 1000 di F/dt Page 5 3 200 300 400 500 600 700 800 A/μs 1000 diF/dt 2013­12­05 IDP45E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDP45E60 K/W ZthJC 10 0 10 -1 D = 0.50 10 -2 0.20 0.10 0.05 0.02 10 -3 0.01 single pulse 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp Rev.2.5 Page 6 2013­12­05 IDP45E60 Package Outline: TO220-2 Rev.2.5 Page 7 2013­12­05 IDP45E60 Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.5 Page 8 2013­12­05