IDV03S60CXKSA1

SiC Silicon Carbide Diode 2nd Generation thinQ!™ 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Data Sheet Rev. 2.1, 2010-02-16 Final Industrial & Multimarket 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV03S60C Description The second generation of Infineon SiC Schottky diodes has emerged over the years as the industry standard. The IDVxxS60C family is extending the already broad portfolio with the TO220FullPAK package. In order to greatly reduce the impact of the internal isolation of the FullPAK on the thermal performance, Infineon is applying it´s new diffusion soldering process for attaching the chip to the leadframe. The result of this is nearly identical thermal characteristics to that of the SiC diodes in the non-isolated TO220 package. Features • • • • • • • • Revolutionary semiconductor material - Silicon Carbide Nearly no reverse / forward recovery charge High surge current capability Fully isolated package with nearly similar Rth,jc as the standard T0220 Suitable for high temperature operation Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Switching behavior independent of forward current, switching speed and temperature Benefits • • • • • • System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Good thermal performance without the need for additional isolation layer and washer Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures and less fans Reduced EMI Applications Fully isolated TO220 package for e.g. CCM PFC; Motor Drives; Solar Applications; UPS Table 1 Key Performance Parameters Parameter Value Unit VDC 600 V QC 5 nC IF @ TC < 120°C 3 Table 2 A Pin Definition Pin 1 Pin2 Pin 3 C A n.a. Type / Ordering Code Package IDV03S60C PG-TO220 FullPAK Marking D03S60C Related Links IFX SiC Diodes Webpage 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.1, 2010-02-16 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 3 Rev. 2.1, 2010-02-16 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Maximum ratings 2 Maximum ratings Table 3 Maximum ratings Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition A TC= < 120°C Continuous forward current IF - - 3 Surge non-repetitive IF, SM - - 16 TC= 25°C, tp = 10 ms - - 14 TC= 150°C, tp = 10 ms TC= 25°C, tp = 10 µs forward current, sine halfwave Non-repetitive peak forward current IF, max - - 115 i² t value ∫i²dt - - 1,2 - A²s TC= 25°C, tp = 10 ms 0,96 TC= 150°C, tp = 10 ms Repetitive peak reverse voltage VRRM - - 600 V Tj= 25°C Diode dv/dt ruggedness dv/dt - - 50 V/ns VR= 0...480 V Power dissipation Ptot - - 25 W TC= 25 °C Operating and storage temperature Tj; Tstg - 55 - 175 °C - - 50 Ncm Mounting torque 3 Thermal characteristics Table 4 Thermal characteristics TO-220 FullPAK Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 5,9 Thermal resistance, junction ambient RthJA - - 62 Soldering temperature, wavesoldering only allowed at leads Tsold - - 260 Final Data Sheet 4 M2.5 screws Note / Test Condition K/W leaded °C 1.6 mm (0.063 in.) from case for 10 s Rev. 2.1, 2010-02-16 2nd Generation thinQ!™ SiC Schottky Diode IDV03S60C Electrical characteristics 4 Electrical characteristics Table 5 Static characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition V Tj= 25 °C, IR= 0.03 mA DC blocking voltage VDC 600 - - Diode forward voltage VF - 1.7 1.9 IF= 3 A, Tj= 25 °C - 2.1 2.6 IF= 3 A, Tj= 150 °C - 0.32 30 - 1.3 300 Reverse current Table 6 IR µA IR= 600 V, Tj=25 °C IR= 600 V, Tj=150 °C AC characteristics Parameter Symbol Total capacitive charge 1) Switching time Values Unit Note / Test Condition VR= 400 V, F ≤I Fmax Min. Typ. Max. Qc - 5 - nC tc - -